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MOSFET 2N-CH 150V 53A I4-PAC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 53A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
- Power - Max: 180W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock3,392 |
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Standard | 150V | 53A | 20 mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V | 180W | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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MOSFET N/P-CH 150V 36A/22A I4PAC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 36A, 22A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Power - Max: 125W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock4,208 |
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Standard | 150V | 36A, 22A | 40 mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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IXYS |
MOSFET 2N-CH 200V 33A I4-PAC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 33A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Power - Max: 125W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock5,040 |
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Standard | 200V | 33A | 40 mOhm @ 30A, 10V | 4.5V @ 250µA | 90nC @ 10V | 3700pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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MOSFET 2N-CH 250V 30A I4-PAC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Power - Max: 125W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock4,960 |
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Standard | 250V | 30A | 50 mOhm @ 25A, 10V | 4.5V @ 250µA | 78nC @ 10V | 4000pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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IXYS |
MOSFET N/P-CH 100V 62A/54A I4PAC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 62A, 54A
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Power - Max: 89W, 132W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock3,520 |
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Standard | 100V | 62A, 54A | 11 mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | 5080pF @ 25V | 89W, 132W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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MOSFET 2N-CH 100V 100A I5-PAK
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Power - Max: 150W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-Pak?
- Supplier Device Package: ISOPLUSi5-Pak?
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Package: ISOPLUSi5-Pak? |
Stock6,160 |
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Standard | 100V | 100A | 7.4 mOhm @ 50A, 10V | 4.5V @ 250µA | 151nC @ 10V | 6900pF @ 25V | 150W | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUSi5-Pak? | ISOPLUSi5-Pak? |
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MOSFET N/P-CH 200V 26A/17A I4PAC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 26A, 17A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
- Power - Max: 125W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock4,320 |
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Standard | 200V | 26A, 17A | 60 mOhm @ 25A, 10V | 5V @ 250µA | 70nC @ 10V | 2720pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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MOSFET 6N-CH 75V 255A ISOPLUS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: ISOPLUS-DIL™
- Supplier Device Package: ISOPLUS-DIL™
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Package: - |
Request a Quote |
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- | 75V | 255A (Tc) | 1.3mOhm @ 100A, 10V | 3.8V @ 275µA | 155nC @ 10V | 14400pF @ 38V | - | -55°C ~ 175°C (TJ) | Surface Mount | ISOPLUS-DIL™ | ISOPLUS-DIL™ |
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IXYS |
SIC 2N-CH 1200V SOT227B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B |
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IXYS |
MOSFET N/P-CH 100V 54A I4-PAC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
- Power - Max: 89W, 132W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-PAK™
- Supplier Device Package: ISOPLUS i4-PAC™
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Package: - |
Request a Quote |
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- | 100V | 54A (Tc), 62A (Tc) | 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V | 4V @ 250µA, 4.5V @ 250µA | 197nC @ 10V, 104nC @ 10V | 1370pF @ 25V, 5080pF @ 25V | 89W, 132W | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-PAK™ | ISOPLUS i4-PAC™ |
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MOSFET 6N-CH 100V 190A ISOPLUS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: ISOPLUS-DIL™
- Supplier Device Package: ISOPLUS-DIL™
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Package: - |
Request a Quote |
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- | 100V | 190A (Tc) | 2.2mOhm @ 100A, 10V | 3.5V @ 275µA | 155nC @ 10V | 11100pF @ 50V | - | -55°C ~ 175°C (TJ) | Surface Mount | ISOPLUS-DIL™ | ISOPLUS-DIL™ |
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IXYS |
SIC 2N-CH 1200V 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
SIC 2N-CH 1200V 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
SIC 2N-CH 1200V 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
SIC 2N-CH 1200V 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
MOSFET 600V 50A ISOPLUS-SMPD
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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Package: - |
Request a Quote |
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- | 600V | 50A (Tc) | - | - | - | - | - | - | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B |
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IXYS |
MOSFET 6N-CH 55V 150A
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 55V | 150A (Tc) | 3.1mOhm @ 100A, 10V | 4V @ 1mA | 100nC @ 10V | 6970pF @ 25V | - | -55°C ~ 175°C (TJ) | - | - | - |
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IXYS |
SIC 2N-CH 1200V 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
SIC 2N-CH 1200V 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
MOSFET 6N-CH 75V 180A ISOPLUS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: ISOPLUS-DIL™
- Supplier Device Package: ISOPLUS-DIL™
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Package: - |
Request a Quote |
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- | 75V | 180A (Tc) | 3.1mOhm @ 100A, 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | - | -55°C ~ 175°C (TJ) | Surface Mount | ISOPLUS-DIL™ | ISOPLUS-DIL™ |
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IXYS |
SIC 2N-CH 1200V 58A 9SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 58A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-PowerSMD
- Supplier Device Package: 9-SMPD-B
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 58A | - | - | - | - | - | - | Surface Mount | 9-PowerSMD | 9-SMPD-B |
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IXYS |
SIC 2N-CH 1200V 58A SMPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 58A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Power Module
- Supplier Device Package: SMPD
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 58A | - | - | - | - | - | - | Surface Mount | 9-SMD Power Module | SMPD |
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IXYS |
MOSFET 6N-CH 100V 120A ISOPLUS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL™
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Package: - |
Request a Quote |
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- | 100V | 120A (Tc) | 4mOhm @ 80A, 10V | 3.5V @ 150µA | 88nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL™ |
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MOSFET 6N-CH 55V 150A
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 55V | 150A (Tc) | 3.1mOhm @ 100A, 10V | 4V @ 1mA | 100nC @ 10V | 6970pF @ 25V | - | -55°C ~ 175°C (TJ) | - | - | - |
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IXYS |
MOSFET 2N-CH 1000V Y3-LI
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
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Package: - |
Request a Quote |
|
- | 1000V (1kV) | - | - | - | - | - | - | - | Chassis Mount | Y3-Li | Y3-Li |
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IXYS |
SIC 2N-CH 900V SOT227B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: - |
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- | 900V | - | - | - | - | - | - | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B |
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IXYS |
MOSFET 2N-CH 500V 30A 24SMPD
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
- Power - Max: 320W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SMD Module, 9 Leads
- Supplier Device Package: 24-SMPD
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Package: - |
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- | 500V | 30A (Tc) | 110mOhm @ 30A, 10V | 5V @ 4mA | 96nC @ 10V | 6250pF @ 25V | 320W | -55°C ~ 150°C (TJ) | Surface Mount | 24-SMD Module, 9 Leads | 24-SMPD |
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IXYS |
MOSFET ISOPLUS-SMPD
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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Package: - |
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- | - | - | - | - | - | - | - | - | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B |