Page 45 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTA10N60P
IXYS

MOSFET N-CH 600V 10A D2-PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,328
IXFA8N50P3
IXYS

MOSFET N-CH 500V 8A TO-263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,328
IXTQ56N15T
IXYS

MOSFET N-CH 150V 56A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,008
IXTQ36N20T
IXYS

MOSFET N-CH 200V TO-3P

Package: TO-3P-3, SC-65-3

Stock3,264
IXFA4N100P
IXYS

MOSFET N-CH 1000V 4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,104
IXFA130N10T
IXYS

MOSFET N-CH 100V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,000
IXTA170N075T2
IXYS

MOSFET N-CH 75V 170A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,400
IXTA130N10T7
IXYS

MOSFET N-CH 100V 130A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock6,784
IXTP10N60PM
IXYS

MOSFET N-CH 600V 5A TO-220

Package: TO-220-3

Stock6,736
IXTP12N50PM
IXYS

MOSFET N-CH 500V 6A TO-220

Package: TO-220-3

Stock7,440
IXTP74N15T
IXYS

MOSFET N-CH 150V 74A TO-220

Package: TO-220-3

Stock3,040
IXTP44N25T
IXYS

MOSFET N-CH 250V 44A TO-220

Package: TO-220-3

Stock2,768
IXTP36N30T
IXYS

MOSFET N-CH 300V 36A TO-220

Package: TO-220-3

Stock2,624
IXTA48P05T
IXYS

MOSFET P-CH 50V 48A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,520
IXTA26P10T
IXYS

MOSFET P-CH 100V 26A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
IXTA15P15T
IXYS

MOSFET P-CH 150V 15A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,736
IXTU05N100
IXYS

MOSFET N-CH 1000V 750MA TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,072
IXTY48P05T
IXYS

MOSFET P-CH 50V 48A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,168
IXTY26P10T
IXYS

MOSFET P-CH 100V 26A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,272
IXTY15P15T
IXYS

MOSFET P-CH 150V 15A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,096

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTA10N60P	IXYS	MOSFET N-CH 600V 10A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,328	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5.5V @ 250µA	32nC @ 10V	1610pF @ 25V	±30V	-	200W (Tc)	740 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA8N50P3	IXYS	MOSFET N-CH 500V 8A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,328	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 1.5mA	13nC @ 10V	705pF @ 25V	±30V	-	180W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTQ56N15T	IXYS	MOSFET N-CH 150V 56A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,008	MOSFET (Metal Oxide)	150V	56A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ36N20T	IXYS	MOSFET N-CH 200V TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,264	MOSFET (Metal Oxide)	200V	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFA4N100P	IXYS	MOSFET N-CH 1000V 4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,104	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	5V @ 250µA	26nC @ 10V	1456pF @ 25V	±20V	-	150W (Tc)	3.3 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T	IXYS	MOSFET N-CH 100V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,000	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4.5V @ 1mA	104nC @ 10V	5080pF @ 25V	-	-	360W (Tc)	9.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA170N075T2	IXYS	MOSFET N-CH 75V 170A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,400	MOSFET (Metal Oxide)	75V	170A (Tc)	10V	4V @ 250µA	109nC @ 10V	6860pF @ 25V	±20V	-	360W (Tc)	5.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA130N10T7	IXYS	MOSFET N-CH 100V 130A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,784	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4.5V @ 250µA	104nC @ 10V	5080pF @ 25V	±20V	-	360W (Tc)	9.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTP10N60PM	IXYS	MOSFET N-CH 600V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,736	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	5V @ 100µA	32nC @ 10V	1610pF @ 25V	±30V	-	50W (Tc)	740 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP12N50PM	IXYS	MOSFET N-CH 500V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,440	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5.5V @ 250µA	29nC @ 10V	1830pF @ 25V	±30V	-	50W (Tc)	500 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP74N15T	IXYS	MOSFET N-CH 150V 74A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,040	MOSFET (Metal Oxide)	150V	74A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220AB	TO-220-3
IXTP44N25T	IXYS	MOSFET N-CH 250V 44A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,768	MOSFET (Metal Oxide)	250V	44A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220AB	TO-220-3
IXTP36N30T	IXYS	MOSFET N-CH 300V 36A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,624	MOSFET (Metal Oxide)	300V	36A (Tc)	-	-	70nC @ 10V	2250pF @ 25V	-	-	-	110 mOhm @ 500mA, 10V	-	Through Hole	TO-220AB	TO-220-3
IXTA48P05T	IXYS	MOSFET P-CH 50V 48A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,520	MOSFET (Metal Oxide)	50V	48A (Tc)	10V	4.5V @ 250µA	53nC @ 10V	3660pF @ 25V	±15V	-	150W (Tc)	30 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA26P10T	IXYS	MOSFET P-CH 100V 26A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	100V	26A (Tc)	10V	4.5V @ 250µA	52nC @ 10V	3820pF @ 25V	±15V	-	150W (Tc)	90 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA15P15T	IXYS	MOSFET P-CH 150V 15A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,736	MOSFET (Metal Oxide)	150V	15A (Tc)	10V	4.5V @ 250µA	48nC @ 10V	3650pF @ 25V	±15V	-	150W (Tc)	240 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTU05N100	IXYS	MOSFET N-CH 1000V 750MA TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,072	MOSFET (Metal Oxide)	1000V	750mA (Tc)	10V	4.5V @ 250µA	7.8nC @ 10V	260pF @ 25V	±30V	-	40W (Tc)	17 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTY48P05T	IXYS	MOSFET P-CH 50V 48A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,168	MOSFET (Metal Oxide)	50V	48A (Tc)	10V	4.5V @ 250µA	53nC @ 10V	3660pF @ 25V	±15V	-	150W (Tc)	30 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY26P10T	IXYS	MOSFET P-CH 100V 26A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,272	MOSFET (Metal Oxide)	100V	26A (Tc)	10V	4.5V @ 250µA	52nC @ 10V	3820pF @ 25V	±15V	-	150W (Tc)	90 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY15P15T	IXYS	MOSFET P-CH 150V 15A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,096	MOSFET (Metal Oxide)	150V	15A (Tc)	10V	4.5V @ 250µA	48nC @ 10V	3650pF @ 25V	±15V	-	150W (Tc)	240 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA80N12T2	IXYS	MOSFET N-CH 120V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	120V	80A (Tc)	10V	4V @ 250µA	80nC @ 10V	4740pF @ 25V	±20V	-	325W (Tc)	17 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTY1R4N120P	IXYS	MOSFET N-CH 1200V 1.4A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,880	MOSFET (Metal Oxide)	1200V	1.4A (Tc)	10V	4.5V @ 100µA	-	-	±20V	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP42N15T	IXYS	MOSFET N-CH 150V 42A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock106,932	MOSFET (Metal Oxide)	150V	42A (Tc)	10V	4.5V @ 250µA	21nC @ 10V	1880pF @ 25V	±30V	-	200W (Tc)	45 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP05N100M	IXYS	MOSFET N-CH 1000V 700MA TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,008	MOSFET (Metal Oxide)	1000V	700mA (Tc)	10V	4.5V @ 25µA	7.8nC @ 10V	260pF @ 25V	±30V	-	25W (Tc)	17 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA56N15T	IXYS	MOSFET N-CH 150V 56A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,608	MOSFET (Metal Oxide)	150V	56A (Tc)	10V	4.5V @ 250µA	34nC @ 10V	2250pF @ 25V	±30V	-	300W (Tc)	36 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA36N20T	IXYS	MOSFET N-CH 200V 36A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,248	MOSFET (Metal Oxide)	200V	36A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFP4N100P	IXYS	MOSFET N-CH 1000V 4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,536	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	5V @ 250µA	26nC @ 10V	1456pF @ 25V	±20V	-	150W (Tc)	3.3 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP08N120P	IXYS	MOSFET N-CH 1200V 800MA TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,704	MOSFET (Metal Oxide)	1200V	800mA (Tc)	10V	4.5V @ 50µA	14nC @ 10V	333pF @ 25V	±20V	-	50W (Tc)	25 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3