Page 13 - IXYS Products | Heisener Electronics

IXSR50N60BU1
IXYS

IGBT 600V ISOPLUS247

Package: ISOPLUS247?

Stock4,560
IXSH30N60U1
IXYS

IGBT 600V 50A 200W TO247

Package: TO-247-3

Stock423,624
IXFC40N30Q
IXYS

MOSFET N-CH 300V ISOPLUS220

Package: ISOPLUS220?

Stock5,760
IXFV52N30PS
IXYS

MOSFET N-CH 300V 52A PLUS220-S

Package: PLUS-220SMD

Stock3,488
MMIX1F132N50P3
IXYS

MOSFET N-CH 500V 63A SMPD

Package: 24-PowerSMD, 21 Leads

Stock4,880
IXTX22N100L
IXYS

MOSFET N-CH 1000V 22A PLUS247

Package: TO-247-3

Stock5,808
MKE38RK600DFELB-TRR
IXYS

MOSFET N-CH 600V 50A SMPD

Package: 9-SMD Module

Stock3,920
IXFE48N50Q
IXYS

MOSFET N-CH 500V 41A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,576
IXTK180N15
IXYS

MOSFET N-CH 150V 180A TO-264

Package: TO-264-3, TO-264AA

Stock4,944
IXFQ12N80P
IXYS

MOSFET N-CH 800V 12A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,824
IXKP13N60C5M
IXYS

MOSFET N-CH 600V 6.5A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,304
IXTA3N100P
IXYS

MOSFET N-CH 1000V 3A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
IXFP12N50P
IXYS

MOSFET N-CH 500V 12A TO-220

Package: TO-220-3

Stock4,144
IXTQ32N65X
IXYS

MOSFET N-CH 650V 32A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,288
IXFH220N06T3
IXYS

60V/220A TRENCHT3 HIPERFET MOSFE

Package: TO-247-3

Stock3,872
CS35-12IO4
IXYS

SCR PHASE CONTROL 1200V 60A TO65

Package: TO-208AC, TO-65-3, Stud

Stock2,048
MDC500-20IO1
IXYS

DIODE MODULE 2000V WC-500

Package: WC-500

Stock4,560
DSS1-100AA
IXYS

DIODE SCHOTTKY 100V 1A SMA

Package: DO-214AC, SMA

Stock4,880
DPF400C400NB
IXYS

DIODE MODULE 400V 400A SOT227B

Package: SOT-227-4, miniBLOC

Stock2,608
DSI35-12A
IXYS

DIODE AVALANCHE 1.2KV 49A DO203

Package: DO-203AB, DO-5, Stud

Stock4,224

Part Number	Manufacturer	Description	Package	Stock
IXSR50N60BU1	IXYS	IGBT 600V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	Package: ISOPLUS247?	Stock4,560
IXSH30N60U1	IXYS	IGBT 600V 50A 200W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 200W Switching Energy: 2.5mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 60ns/400ns Test Condition: 480V, 30A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	Package: TO-247-3	Stock423,624
IXFC40N30Q	IXYS	MOSFET N-CH 300V ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,760
IXFV52N30PS	IXYS	MOSFET N-CH 300V 52A PLUS220-S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock3,488
MMIX1F132N50P3	IXYS	MOSFET N-CH 500V 63A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock4,880
IXTX22N100L	IXYS	MOSFET N-CH 1000V 22A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,808
MKE38RK600DFELB-TRR	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD?.B Package / Case: 9-SMD Module	Package: 9-SMD Module	Stock3,920
IXFE48N50Q	IXYS	MOSFET N-CH 500V 41A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,576
IXTK180N15	IXYS	MOSFET N-CH 150V 180A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,944
IXFQ12N80P	IXYS	MOSFET N-CH 800V 12A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,824
IXKP13N60C5M	IXYS	MOSFET N-CH 600V 6.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ABFP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,304
IXTA3N100P	IXYS	MOSFET N-CH 1000V 3A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640
IXFP12N50P	IXYS	MOSFET N-CH 500V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,144
IXTQ32N65X	IXYS	MOSFET N-CH 650V 32A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,288
IXFH220N06T3	IXYS	60V/220A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 440W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,872
CS35-12IO4	IXYS	SCR PHASE CONTROL 1200V 60A TO65 Voltage - Off State: 1200V Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Voltage - On State (Vtm) (Max): 1.5V Current - On State (It (AV)) (Max): 69A Current - On State (It (RMS)) (Max): 120A Current - Hold (Ih) (Max): 80mA Current - Off State (Max): 10mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1340A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis, Stud Mount Package / Case: TO-208AC, TO-65-3, Stud Supplier Device Package: TO-208AC (TO-65)	Package: TO-208AC, TO-65-3, Stud	Stock2,048
MDC500-20IO1	IXYS	DIODE MODULE 2000V WC-500 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2000V Current - On State (It (AV)) (Max): 545A Current - On State (It (RMS)) (Max): 1294A Voltage - Gate Trigger (Vgt) (Max): 3V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - Hold (Ih) (Max): 1A Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-500	Package: WC-500	Stock4,560
DSS1-100AA	IXYS	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AC, SMA	Stock4,880
DPF400C400NB	IXYS	DIODE MODULE 400V 400A SOT227B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Operating Temperature - Junction: -	Package: SOT-227-4, miniBLOC	Stock2,608
DSI35-12A	IXYS	DIODE AVALANCHE 1.2KV 49A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 49A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock4,224
DSSK30-0045A	IXYS	DIODE ARRAY SCHOTTKY 45V TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 660mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	Package: TO-3P-3 Full Pack	Stock3,232
DPG60C400HB	IXYS	DIODE ARRAY GP 400V 30A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 400V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock6,016
VBO40-12NO6	IXYS	DIODE BRIDGE 40A 1200V SOT-227B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A Current - Reverse Leakage @ Vr: 40µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: SOT-227-4, miniBLOC	Stock4,448
IXDF502SIA	IXYS	IC GATE DRIVER 2A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 7.5ns, 6.5ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock42,684
IXCY40M35	IXYS	IC CURRENT REGULATOR DPAK Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 40mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,336
IXTA36N30P-TRL	IXYS	MOSFET N-CH 300V 36A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote
IXTY64N055T-TRL	IXYS	MOSFET N-CH 55V 64A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote
IXFP38N30X3	IXYS	MOSFET N-CH 300V 38A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,346