Page 149 - IXYS Products | Heisener Electronics

TX02-4400JI
IXYS

IC INTERFACE TRANSFORMER 8SMD GW

Package: -

Stock8,874
IXGH28N140B3H1
IXYS

IGBT 1400V 60A 300W TO247

Package: TO-247-3

Stock4,416
FII30-12E
IXYS

IGBT PHASE TOP ISOPLUS I4-PAC-5

Package: i4-Pac?-5

Stock6,912
IXFH80N10
IXYS

MOSFET N-CH 100V 80A TO-247

Package: TO-247-3

Stock3,312
IXFV22N60PS
IXYS

MOSFET N-CH 600V 22A PLUS220-SMD

Package: PLUS-220SMD

Stock2,912
IXFQ23N60Q
IXYS

MOSFET N-CH 600V 23A TO-268(D3)

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,096
IXTA120P065T
IXYS

MOSFET P-CH 65V 120A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,664
IXTQ75N10P
IXYS

MOSFET N-CH 100V 75A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,392
IXFK140N20P
IXYS

MOSFET N-CH 200V 140A TO-264

Package: TO-264-3, TO-264AA

Stock3,024
IXFT94N30P3
IXYS

MOSFET N-CH 300V 94A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,936
IXTP110N055T2
IXYS

MOSFET N-CH 55V 110A TO-220

Package: TO-220-3

Stock531,180
IXTN550N055T2
IXYS

MOSFET N-CH 55V 550A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,648
475-102N20A-00
IXYS

RF MOSFET N-CHANNEL DE475

Package: 6-SMD, Flat Lead Exposed Pad

Stock5,008
CS35-08IO4
IXYS

SCR PHASE CONTROL 800V 60A TO-65

Package: TO-208AC, TO-65-3, Stud

Stock5,264
VCA105-12IO7
IXYS

MOD THYRISTOR 1200V 105A ECOPAC2

Package: ECO-PAC2

Stock4,080
VWO140-08IO1
IXYS

MODULE AC CTLR 3PH 800V V2-PACK

Package: Module

Stock7,120
VWO40-16IO7
IXYS

MODULE AC CTLR 3PH 1600V PWS-F

Package: Module

Stock5,616
MCC44-14IO1B
IXYS

MOD THYRISTOR DUAL 1400V TO240AA

Package: TO-240AA

Stock4,720
VHF15-16IO5
IXYS

RECT BRIDGE 1PH 1600V PWS-E-1

Package: PWS-E1

Stock6,512
DGSS10-060CC
IXYS

DIODE ARRAY SCHOTTKY 600V 25A

Package: ISOPLUS220?

Stock7,696

Part Number	Manufacturer	Description	Package	Stock
TX02-4400JI	IXYS	IC INTERFACE TRANSFORMER 8SMD GW Transformer Type: Isolation and Data Interface (Encapsulated) Inductance: - E.T.: - Turns Ratio - Primary:Secondary: 3:1 Mounting Type: Surface Mount Size / Dimension: 0.378" L x 0.250" W (9.78mm x 6.35mm) Height - Seated (Max): 0.180" (4.57mm) Operating Temperature: -55°C ~ 125°C	Package: -	Stock8,874
IXGH28N140B3H1	IXYS	IGBT 1400V 60A 300W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A Power - Max: 300W Switching Energy: 3.6mJ (on), 3.9mJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 16ns/190ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock4,416
FII30-12E	IXYS	IGBT PHASE TOP ISOPLUS I4-PAC-5 IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 33A Power - Max: 150W Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: 1.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock6,912
IXFH80N10	IXYS	MOSFET N-CH 100V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,312
IXFV22N60PS	IXYS	MOSFET N-CH 600V 22A PLUS220-SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock2,912
IXFQ23N60Q	IXYS	MOSFET N-CH 600V 23A TO-268(D3) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,096
IXTA120P065T	IXYS	MOSFET P-CH 65V 120A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,664
IXTQ75N10P	IXYS	MOSFET N-CH 100V 75A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,392
IXFK140N20P	IXYS	MOSFET N-CH 200V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,024
IXFT94N30P3	IXYS	MOSFET N-CH 300V 94A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,936
IXTP110N055T2	IXYS	MOSFET N-CH 55V 110A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock531,180
IXTN550N055T2	IXYS	MOSFET N-CH 55V 550A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 550A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 940W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,648
475-102N20A-00	IXYS	RF MOSFET N-CHANNEL DE475 Transistor Type: N-Channel Frequency: 30MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 1800W Voltage - Rated: 1000V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE475	Package: 6-SMD, Flat Lead Exposed Pad	Stock5,008
CS35-08IO4	IXYS	SCR PHASE CONTROL 800V 60A TO-65 Voltage - Off State: 800V Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Voltage - On State (Vtm) (Max): 1.5V Current - On State (It (AV)) (Max): 69A Current - On State (It (RMS)) (Max): 120A Current - Hold (Ih) (Max): 80mA Current - Off State (Max): 10mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1340A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis, Stud Mount Package / Case: TO-208AC, TO-65-3, Stud Supplier Device Package: TO-208AC (TO-65)	Package: TO-208AC, TO-65-3, Stud	Stock5,264
VCA105-12IO7	IXYS	MOD THYRISTOR 1200V 105A ECOPAC2 Structure: Common Anode - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	Package: ECO-PAC2	Stock4,080
VWO140-08IO1	IXYS	MODULE AC CTLR 3PH 800V V2-PACK Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 46A Current - On State (It (RMS)) (Max): 101A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1240A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	Package: Module	Stock7,120
VWO40-16IO7	IXYS	MODULE AC CTLR 3PH 1600V PWS-F Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 18A Current - On State (It (RMS)) (Max): 29A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 450A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	Package: Module	Stock5,616
MCC44-14IO1B	IXYS	MOD THYRISTOR DUAL 1400V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 51A Current - On State (It (RMS)) (Max): 80A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock4,720
VHF15-16IO5	IXYS	RECT BRIDGE 1PH 1600V PWS-E-1 Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 1600V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): 15A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 210A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E1	Package: PWS-E1	Stock6,512
DGSS10-060CC	IXYS	DIODE ARRAY SCHOTTKY 600V 25A Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23ns Current - Reverse Leakage @ Vr: 250µA @ 600V Operating Temperature - Junction: - Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	Package: ISOPLUS220?	Stock7,696
MDD950-14N1W	IXYS	DIODE MODULE 1.4KV 950A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 950A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 1400V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock5,472
DSP8-12AS	IXYS	DIODE ARRAY GP 1200V 11A TO263 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 11A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA Supplier Device Package: TO-263 (D2Pak)	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock4,048
VUB72-16NO1	IXYS	RECT BRIDGE 3PH 1600V V1-A Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 20µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	Package: V1-A	Stock2,912
IXDF504D1T/R	IXYS	IC GATE DRIVER 4A 6-DFN Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (4x5)	Package: 6-VDFN Exposed Pad	Stock4,320
IX6R11S3T/R	IXYS	IC DRVR HALF BRIDGE 4A 16-SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 35 V Logic Voltage - VIL, VIH: 6V, 9.6V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 25ns, 17ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.295", 7.50mm Width)	Stock2,560
P0848YC04C	IXYS	SCR 400V 1713A W58 Voltage - Off State: 400 V Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 200 mA Voltage - On State (Vtm) (Max): 1.47 V Current - On State (It (AV)) (Max): 848 A Current - On State (It (RMS)) (Max): 1713 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AB, B-PuK Supplier Device Package: W58	Package: -	Request a Quote
DSEI12-12AZ-TUB	IXYS	DIODE GEN PURP 1.2KV 11A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 11A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: 6pF @ 600V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock138
IXFH130N15X3	IXYS	MOSFET N-CH 150V 130A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Stock123