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IXYS |
IGBT 1200V 50A 200W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 200W
- Switching Energy: 9.6mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 100ns/450ns
- Test Condition: 960V, 25A, 18 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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Package: TO-247-3 |
Stock2,880 |
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IXYS |
IGBT 600V 76A 200W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 76A
- Current - Collector Pulsed (Icm): 152A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
- Power - Max: 200W
- Switching Energy: 4mJ (off)
- Input Type: Standard
- Gate Charge: 110nC
- Td (on/off) @ 25°C: 25ns/250ns
- Test Condition: 480V, 39A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock2,576 |
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IXYS |
IGBT 600V 48A 150W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
- Power - Max: 150W
- Switching Energy: 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 41nC
- Td (on/off) @ 25°C: 50ns/150ns
- Test Condition: 480V, 24A, 33 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,456 |
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IXYS |
IGBT 3000V TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 380A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
- Power - Max: 240W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 200nC
- Td (on/off) @ 25°C: 72ns/445ns
- Test Condition: 1500V, 42A, 20 Ohm, 15V
- Reverse Recovery Time (trr): 1.7µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-4, Isolated
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-4, Isolated |
Stock4,848 |
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IXYS |
IGBT MODULE 1200V 250A
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 360A
- Power - Max: 1100W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A
- Current - Collector Cutoff (Max): 300µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock4,864 |
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IXYS |
MOD IGBT SIXPACK RBSOA 600V E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 45A
- Power - Max: 140W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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Package: E2 |
Stock7,824 |
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IXYS |
MOSFET N-CH 1000V 38A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 38A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock3,392 |
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IXYS |
MOSFET N-CH 600V 41A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 41A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock4,656 |
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IXYS |
MOSFET N-CH 100V 130A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,000 |
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IXYS |
MOSFET N-CH 1.5KV 4A TO268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4,400 |
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IXYS |
MODULE AC CTLR 1600V KAMM-MODUL
- Structure: 1-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 18A
- Current - On State (It (RMS)) (Max): 28A
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: Module |
Stock4,272 |
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IXYS |
SCR THY PHASE LEG 1800V WC-500
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 700A
- Current - On State (It (RMS)) (Max): 1331A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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Package: WC-500 |
Stock6,448 |
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IXYS |
DIODE GEN PURP 1.2KV 11A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 36A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-203AA, DO-4, Stud |
Stock2,336 |
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IXYS |
DIODE GEN PURP 1.6KV 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 1600V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-220-2 |
Stock5,776 |
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IXYS |
DIODE MODULE 1.6KV 950A
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 950A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18µs
- Current - Reverse Leakage @ Vr: 50mA @ 1600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock7,616 |
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IXYS |
DIODE MODULE 1.8KV 36A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 36A
- Voltage - Forward (Vf) (Max) @ If: 1.38V @ 80A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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Package: TO-240AA |
Stock6,848 |
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IXYS |
DIODE MODULE 1.2KV 260A Y4-M6
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 260A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 260A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 12mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
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Package: Y4-M6 |
Stock3,984 |
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IXYS |
DIODE MODULE 1.2KV 56A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 56A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: SOT-227-4, miniBLOC |
Stock6,672 |
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IXYS |
IC BREAKING RECTIFIER 1400V 1A
- Diode Type: Single Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock3,616 |
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IXYS |
IC GATE DRIVER SGL 14A 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 14A, 14A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 22ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,672 |
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IXYS |
IC DRVR HALF BRIDGE 4A 16-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 6V, 7V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650V
- Rise / Fall Time (Typ): 23ns, 22ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock5,696 |
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IXYS |
IC CURRENT REGULATOR DPAK
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 10mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,504 |
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IXYS |
SENSOR MONOCRYSTALLINE MOD 6X6
- Power (Watts) - Max: 6mW
- Current @ Pmpp: 12mA
- Voltage @ Pmpp: 505mV
- Current Short Circuit (Isc): 168mA
- Type: Monocrystalline
- Voltage - Open Circuit: 630mV
- Operating Temperature: -40°C ~ 85°C
- Package / Case: Cells
- Size / Dimension: 0.236" L x 0.236" W (6.00mm x 6.00mm)
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Package: Cells |
Stock5,004 |
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IXYS |
DIODE GEN PURP 600V 20A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO262
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-262-2, I2PAK
- Supplier Device Package: TO-262 (I2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock156 |
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IXYS |
DIODE GEN PURP 2.2KV 1748A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 1748A
- Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 600V 15A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 140A TO268HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXFT)
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock51 |
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