Page 5 - IXYS Products | Heisener Electronics

IXSH15N120B
IXYS

IGBT 1200V 30A 150W TO247

Package: TO-247-3

Stock3,520
IXGH4N250C
IXYS

IGBT 2500V 13A 150W TO247

Package: TO-247-3

Stock6,912
IXGH36N60B3D4
IXYS

IGBT 600V 250W TO247

Package: TO-247-3

Stock3,664
IXGP2N100A
IXYS

IGBT 1000V 4A 25W TO220AB

Package: TO-220-3

Stock7,504
VIO160-12P1
IXYS

MOD IGBT DIODE SGL 1200V ECOPAC2

Package: ECO-PAC2

Stock3,232
MWI100-12A8T
IXYS

IGBT SIXPACK 160A 1200V E3PACK

Package: E3

Stock6,352
MID200-12A4
IXYS

MOD IGBT RBSOA 1200V 270A Y3-DCB

Package: Y3-DCB

Stock2,480
MKI50-12F7
IXYS

MOD IGBT H-BRIDGE 1200V 65A E2

Package: E2

Stock7,440
IXTP90N075T2
IXYS

MOSFET N-CH 75V 90A TO-220

Package: TO-220-3

Stock3,904
IXTK32P60P
IXYS

MOSFET P-CH 600V 32A TO-264

Package: TO-264-3, TO-264AA

Stock4,736
IXFR26N50
IXYS

MOSFET N-CH 500V 26A ISOPLUS247

Package: ISOPLUS247?

Stock3,264
IXTQ150N15P
IXYS

MOSFET N-CH 150V 150A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,472
IXTQ30N60P
IXYS

MOSFET N-CH 600V 30A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,520
IXFV16N80P
IXYS

MOSFET N-CH 800V 16A PLUS220

Package: TO-220-3, Short Tab

Stock5,200
IXTQ22N60P
IXYS

MOSFET N-CH 600V 22A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,112
IXTQ86N20T
IXYS

MOSFET N-CH 200V 86A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,424
IXTU55N075T
IXYS

MOSFET N-CH 75V 55A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,480
IXFB44N100Q3
IXYS

MOSFET N-CH 1000V 44A PLUS264

Package: TO-264-3, TO-264AA

Stock6,576
IXTA80N10T
IXYS

MOSFET N-CH 100V 80A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,336
IXFN340N07
IXYS

MOSFET N-CH 70V 340A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,612

Part Number	Manufacturer	Description	Package	Stock
IXSH15N120B	IXYS	IGBT 1200V 30A 150W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Power - Max: 150W Switching Energy: 1.5mJ (off) Input Type: Standard Gate Charge: 57nC Td (on/off) @ 25°C: 30ns/148ns Test Condition: 960V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	Package: TO-247-3	Stock3,520
IXGH4N250C	IXYS	IGBT 2500V 13A 150W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 46A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A Power - Max: 150W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 57nC Td (on/off) @ 25°C: -/350ns Test Condition: 1250V, 4A, 20 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock6,912
IXGH36N60B3D4	IXYS	IGBT 600V 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 250W Switching Energy: 540µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 19ns/125ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock3,664
IXGP2N100A	IXYS	IGBT 1000V 4A 25W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 4A Current - Collector Pulsed (Icm): 8A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Power - Max: 25W Switching Energy: 260µJ (off) Input Type: Standard Gate Charge: 7.8nC Td (on/off) @ 25°C: 15ns/300ns Test Condition: 800V, 2A, 150 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock7,504
VIO160-12P1	IXYS	MOD IGBT DIODE SGL 1200V ECOPAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 169A Power - Max: 694W Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 160A Current - Collector Cutoff (Max): 6mA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	Package: ECO-PAC2	Stock3,232
MWI100-12A8T	IXYS	IGBT SIXPACK 160A 1200V E3PACK IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Power - Max: 640W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Current - Collector Cutoff (Max): 6.3mA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	Package: E3	Stock6,352
MID200-12A4	IXYS	MOD IGBT RBSOA 1200V 270A Y3-DCB IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 270A Power - Max: 1130W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A Current - Collector Cutoff (Max): 10mA Input Capacitance (Cies) @ Vce: 11nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	Package: Y3-DCB	Stock2,480
MKI50-12F7	IXYS	MOD IGBT H-BRIDGE 1200V 65A E2 IGBT Type: NPT Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 65A Power - Max: 350W Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A Current - Collector Cutoff (Max): 700µA Input Capacitance (Cies) @ Vce: 3.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	Package: E2	Stock7,440
IXTP90N075T2	IXYS	MOSFET N-CH 75V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,904
IXTK32P60P	IXYS	MOSFET P-CH 600V 32A TO-264 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,736
IXFR26N50	IXYS	MOSFET N-CH 500V 26A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,264
IXTQ150N15P	IXYS	MOSFET N-CH 150V 150A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,472
IXTQ30N60P	IXYS	MOSFET N-CH 600V 30A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,520
IXFV16N80P	IXYS	MOSFET N-CH 800V 16A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock5,200
IXTQ22N60P	IXYS	MOSFET N-CH 600V 22A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,112
IXTQ86N20T	IXYS	MOSFET N-CH 200V 86A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,424
IXTU55N075T	IXYS	MOSFET N-CH 75V 55A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,480
IXFB44N100Q3	IXYS	MOSFET N-CH 1000V 44A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1560W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,576
IXTA80N10T	IXYS	MOSFET N-CH 100V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,336
IXFN340N07	IXYS	MOSFET N-CH 70V 340A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 340A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 490nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,612
VTO175-14IO7	IXYS	RECT BRIDGE 3PH 1400V PWS-E-2 Structure: Bridge, 3-Phase - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 167A Current - On State (It (RMS)) (Max): 89A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E2	Package: PWS-E2	Stock6,624
MCC19-16IO1B	IXYS	THYRISTOR MODULE 1600V 2X40A Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 25A Current - On State (It (RMS)) (Max): 40A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock3,888
DSEI2X161-02P	IXYS	DIODE MODULE 200V 165A ECO-PAC2 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 165A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 3mA @ 200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	Package: ECO-PAC2	Stock3,568
VBO22-16NO8	IXYS	RECT BRIDGE 21A 1600V FO-B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 21A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-B Supplier Device Package: FO-B	Package: 4-Square, FO-B	Stock3,440
IXCP50M45A	IXYS	IC CURRENT REGULATOR TO220AB Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 50mA Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock6,784
CMA50E1600QB	IXYS	SCR 1.6KV 79A TO3P Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 50 mA Voltage - On State (Vtm) (Max): 1.3 V Current - On State (It (AV)) (Max): 50 A Current - On State (It (RMS)) (Max): 79 A Current - Hold (Ih) (Max): 100 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: -	Request a Quote
IXTN240N075L2	IXYS	MOSFET N-CH 75V 225A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Stock15
MCMA110P1800TA	IXYS	SCR MODULE 1.8KV 110A TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.8 kV Current - On State (It (AV)) (Max): 110 A Current - On State (It (RMS)) (Max): 200 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: -	Request a Quote