IXYS Products

IGBT 1700V 110A 1040W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 110A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A
• Power - Max: 1040W
• Switching Energy: 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 358nC
• Td (on/off) @ 25°C: 26ns/418ns
• Test Condition: 1360V, 42A, 1 Ohm, 15V
• Reverse Recovery Time (trr): 360ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

IGBT 1700V 24A 250W TO268

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
• Power - Max: 250W
• Switching Energy: 2.97mJ (on), 790µJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 21ns/336ns
• Test Condition: 850V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 200ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

IGBT 650V 130A 600W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 130A
• Current - Collector Pulsed (Icm): 250A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
• Power - Max: 600W
• Switching Energy: 1.3mJ (on), 370µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 22ns/80ns
• Test Condition: 400V, 36A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

MOD IGBT RBSOA 1200V 180A Y3-DCB

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 180A
• Power - Max: 760W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector Cutoff (Max): 7.5mA
• Input Capacitance (Cies) @ Vce: 6.6nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Supplier Device Package: Y3-DCB

MOSFET N-CH TO-220

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

MOSFET N-CH 500V 24A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD
• Package / Case: TO-3P-3 Full Pack

MOSFET N-CH 300V 73A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

MOSFET N-CH 55V 550A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

MOSFET N-CH 600V 38A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

MOSFET N-CH 1200V 1.4A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET N-CH 55V 110A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

MOSFET N-CH 500V 52A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

MOSFET N-CH 1200V 26A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 460 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

MOSFET 2N-CH 200V 33A I4-PAC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 33A
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
• Power - Max: 125W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

MOD THYRISTOR DUAL 16KV

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 268A
• Current - On State (It (RMS)) (Max): 421A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9180A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

RECT BRIDGE 3PH 34A 1400V KAMM

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number of SCRs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 34A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 340A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: KAMM

RECT BRIDGE 1PH 1400V V1A-PAK

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 36A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK

DIODE GEN PURP 1.2KV 52A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 52A
• Voltage - Forward (Vf) (Max) @ If: 2.55V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 2.2mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE ARRAY SCHOTTKY 45V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 790mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 900µA @ 45V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

RECT BRIDGE 3PH 600V ECO-PAC2

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

DIODE BRIDGE 124A 1400V PWS-C

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 124A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-C
• Supplier Device Package: PWS-C

DIODE BRIDGE FAST 600V ECO-PAC1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 86A
• Voltage - Forward (Vf) (Max) @ If: 1.57V @ 30A
• Current - Reverse Leakage @ Vr: 250µA @ 600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

DIODE GEN PURP 1.2KV 1022A W4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 1022A
• Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W4
• Operating Temperature - Junction: -40°C ~ 125°C

SCR 4.2KV W118

• Voltage - Off State: 4.2 kV
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): 5910 A
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 78000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: W118

DIODE GEN PURP 2.5KV 2505A W54

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500 V
• Current - Average Rectified (Io): 2505A
• Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7.6 µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W54
• Operating Temperature - Junction: -

MOSFET N-CH 55V 90A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

BIPOLAR MODULE - THYRISTOR TO-2

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 40 A
• Current - On State (It (RMS)) (Max): 63 A
• Voltage - Gate Trigger (Vgt) (Max): 1.4 V
• Current - Gate Trigger (Igt) (Max): 70 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
• Current - Hold (Ih) (Max): 100 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

MOSFET N-CH 100V 110A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268 (IXTT)
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA