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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 42ns, 30ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock5,888 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2V | 2A, 4A | Non-Inverting | - | 42ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN (3x3) |
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Maxim Integrated |
IC MOSFET DVR HIGH SPEED SOT23-6
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 12.6 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.3A, 7.6A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 82ns, 12.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock1,502,772 |
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Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DVR NOTEBOOK
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.2 V ~ 5.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2.7A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 24V
- Rise / Fall Time (Typ): 10ns, 8ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WQFN Exposed Pad
- Supplier Device Package: 8-TQFN (3x3)
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Package: 8-WQFN Exposed Pad |
Stock22,212 |
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Synchronous | 2 | N-Channel MOSFET | 4.2 V ~ 5.5 V | - | 2A, 2.7A | Non-Inverting | 24V | 10ns, 8ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WQFN Exposed Pad | 8-TQFN (3x3) |
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Maxim Integrated |
IC HALF-BRIDGE TDFN-8
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.2 V ~ 5.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2.2A, 2.7A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 30V
- Rise / Fall Time (Typ): 14ns, 7ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN-EP (2x2)
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Package: 8-WFDFN Exposed Pad |
Stock23,580 |
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Synchronous | 2 | N-Channel MOSFET | 4.2 V ~ 5.5 V | - | 2.2A, 2.7A | Non-Inverting | 30V | 14ns, 7ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN-EP (2x2) |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN (3x3)
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Package: 8-WDFN Exposed Pad |
Stock7,760 |
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Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
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Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 22ns, 16ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock12,432 |
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Single | 1 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2V | 4A, 8A | Inverting, Non-Inverting | - | 22ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRIVER HS SOT23
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 28ns, 13ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock17,832 |
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Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2V | 3A, 7A | Inverting, Non-Inverting | - | 28ns, 13ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,876 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock8,400 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC DRVR MOSFET QUAD 18-SOIC
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 1.7µs, 2.5µs
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOIC
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Package: 18-SOIC (0.295", 7.50mm Width) |
Stock7,404 |
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Independent | 4 | N-Channel MOSFET | 4.5 V ~ 16.5 V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | 18-SOIC |
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Maxim Integrated |
IC MOSFET DRIVER 6-TDFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.3A, 7.6A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 82ns, 12.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-TDFN-EP (3x3)
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Package: 6-WDFN Exposed Pad |
Stock10,980 |
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Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | - | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
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Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 175V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,312 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 175V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,584 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,704 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN (3x3)
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Package: 8-WDFN Exposed Pad |
Stock19,452 |
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Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock179,628 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR TTL SOT23-6
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 14ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock55,080 |
|
Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2V | 3A, 7A | Inverting, Non-Inverting | - | 25ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN-EP (3x3)
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Package: 8-WDFN Exposed Pad |
Stock24,366 |
|
Independent | 2 | IGBT, SiC MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN-EP (3x3)
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Package: 8-WDFN Exposed Pad |
Stock22,110 |
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Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 40ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN-EP (3x3)
|
Package: 8-WDFN Exposed Pad |
Stock25,938 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR COTS
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-CDIP (0.300", 7.62mm)
- Supplier Device Package: 8-CERDIP
|
Package: 8-CDIP (0.300", 7.62mm) |
Stock16,968 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 15 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 32ns, 26ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,080 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC DRVR FET P-P 14-TSSOP
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 15 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
- Supplier Device Package: 14-TSSOP-EP
|
Package: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad |
Stock6,360 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 3A, 3A | RC Input Circuit | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-TSSOP-EP |
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Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock21,600 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 50ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,072 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 3A, 3A | Non-Inverting | 125V | 50ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR INV/NONINV 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock96,000 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC MOSFET DRVR DUAL INV 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,192 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DVR DUAL PWR 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 17 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,504 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |