Micro Commercial Co Products

MOSFET N-CH 20V 12A DFN202

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020-6J
• Package / Case: 6-WDFN Exposed Pad

DIODE ZENER 4.3V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

DIODE SCHOTTKY 80V 2A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 80V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE SCHOTTKY 50V 1A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN PURP 50V R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN PURP 50V 1A SOD123FL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -65°C ~ 150°C

RECTIFIER BRIDGE 1.5A 200V RB-15

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Circular, RB-15
• Supplier Device Package: RB-15

TVS DIODE 12VMW 19.9VC SOD-123FL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 10.1A
• Power - Peak Pulse: 200W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL

TVS DIODE 7.5VWM 12.9VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.3V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 116.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

TVS DIODE 15VWM 24.4VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Tj)
• Rds On (Max) @ Id, Vgs: 26mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6L
• Package / Case: SOT-23-6

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

BRIDGE RECT 1PHASE 600V 8A GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 8 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

Interface

• Voltage - Zener (Nom) (Vz): 47 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

Interface

• Voltage - Zener (Nom) (Vz): 91 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 69.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

DIODE GEN PURP 800V 16A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 50 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Interface

• Voltage - Zener (Nom) (Vz): 7.5 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

TRANS NPN 80V 1A TO92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1 W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

P-CHANNEL MOSFET, TO-220AB(H) PA

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB (H)
• Package / Case: TO-220-3

Interface

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 13 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

TRANS NPN 100V 3A DPAK

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 100 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
• Power - Max: 1 W
• Frequency - Transition: 180MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

200MW ZENER SOD-323

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 14 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Interface

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SMA-FL)
• Operating Temperature - Junction: -55°C ~ 150°C

GENERAL PURPOSE - DIODES

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 250 V
• Current - Average Rectified (Io) (per Diode): 225mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 125°C

DIODE GEN PURP 600V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C