Micro Commercial Co Products

TRANS NPN 40V 0.6A SOT-523

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

DIODE ZENER 6.2V 500MW MINIMELF

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

DIODE ZENER 12V 2W DO41

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

DIODE ZENER 24V 2W DO41

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 13 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

DIODE GEN PURP 200V 1A A-405

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial, Radial Bend
• Supplier Device Package: A-405
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE SCHOTTKY 100V 2A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN 200V 200MA MINI MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE SCHOTTKY 40V 4A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

TVS DIODE 40VWM 64.5VC R6

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6

TVS DIODE 7.02VWM 12.1VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.02V
• Voltage - Breakdown (Min): 7.79V
• Voltage - Clamping (Max) @ Ipp: 12.1V
• Current - Peak Pulse (10/1000µs): 125.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

TVS DIODE 12.8VWM DO201AE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AE, Axial
• Supplier Device Package: DO-201AE

DIODE GEN PURP 800V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -50°C ~ 150°C

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 1.5 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-EDIP (0.321", 8.15mm)
• Supplier Device Package: DBL-1

Interface

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5 A
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
• Power - Max: 350 mW
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

N-CHANNEL MOSFET, D2-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 200A
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 260W (Tj)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TRANS PNP 25V 0.5A TO92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 25 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 1mA, 4V
• Power - Max: 625 mW
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

MOSFET N/P-CH 60V 0.34A SOT363

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V, 50V
• Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA
• Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 40pF, 30pF @ 10V, 5V
• Power - Max: 150mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

IGBT 650V 400A,C2

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 400 A
• Power - Max: 1250 W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 400A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 37900 pF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

Interface

• Diode Type: Single Phase
• Technology: Schottky
• Voltage - Peak Reverse (Max): 80 V
• Current - Average Rectified (Io): 3 A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
• Current - Reverse Leakage @ Vr: 500 µA @ 80 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: LMBS-1

SCHOTTKY DIODES

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 33 µA @ 1.2 kV
• Capacitance @ Vr, F: 1722pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

BRIDGE RECTIFIERS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 35 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 17.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

TRANS NPN 80V 1A SOT223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1.5 W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

DIODE ZENER DO214AA

• Voltage - Zener (Nom) (Vz): 22 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

Interface

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 18 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 14 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

DIODE ARR SCHOT 150V 40A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 40 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -55°C ~ 150°C

TRANS NPN 25V 1A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 25 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
• Power - Max: 500 mW
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

DIODE GEN PURP 800V 6A R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C