Micro Commercial Co Products

DIODE ZENER 22V 1W DO41G

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41G

DIODE ZENER 16V 500MW DO35

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

DIODE SCHOTTKY 20V 1A SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 20V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 125°C

DIODE GEN PURP 50V DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN PURP 200V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 175°C

DIODE SCHOTTKY 60V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

TVS DIODE 17VWM 29.3VC R6

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 29.3V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6

TVS DIODE 5VWM 13VC 0201

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.6V
• Voltage - Clamping (Max) @ Ipp: 13V
• Current - Peak Pulse (10/1000µs): 4A (8/20µs)
• Power - Peak Pulse: 52W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 2pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201

TVS DIODE 36.8VWM DO201AE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36.8V
• Voltage - Breakdown (Min): 40.9V
• Voltage - Clamping (Max) @ Ipp: 59.3V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AE, Axial
• Supplier Device Package: DO-201AE

500MW ZENER SOD-123

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5.83%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Interface

• Voltage - Zener (Nom) (Vz): 2.4 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

500MW ZENER SOD-123

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±2%
• Power - Max: 410 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AA, SMB Flat Leads
• Supplier Device Package: SMBF
• Operating Temperature - Junction: -55°C ~ 150°C

BRIDGE RECTIFIERS 800V 25A,GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

TRANS NPN 25V 0.5A TO92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 25 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
• Power - Max: 625 mW
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package: TO-92

DIODE GEN PURP 400V 1.5A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

Interface

• Voltage - Zener (Nom) (Vz): 180 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

MOSFET N-CH 650V 11A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 31.3W (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 35 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 17.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-ESIP, PB
• Supplier Device Package: PB

DIODE ZENER 12V 3W DO214AC

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5.42%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

MOSFET N/P-CH 30V 1A SOT23-6L

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1A
• Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA, 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V, 1050pF @ 15V
• Power - Max: 1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6L

Interface

• Voltage - Zener (Nom) (Vz): 39 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

MOSFET N-CH ENH FET 100VDS 2A 8A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 2A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W
• Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

TRANS PNP 45V 1A TO92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 830 mW
• Frequency - Transition: 100MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

DIODE GEN PURP 200V 5A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C