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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP4
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 100A
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,352 |
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Standard | 1200V | 120A | 3V @ 100A | 100µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 100A
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock4,528 |
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Standard | 1200V | 120A | 3V @ 100A | 100µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
IC RECT BRIDGE 400V 10A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, VJ
- Supplier Device Package: VJ
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Package: 4-Square, VJ |
Stock7,696 |
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Standard | 400V | 10A | 1.3V @ 1A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, VJ | VJ |
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Microsemi Corporation |
BRIDGE RECT 1PHASE 100V 4-SQUARE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Current - Reverse Leakage @ Vr: 20µA @ 100V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-Square, NB
- Supplier Device Package: NB
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Package: 4-Square, NB |
Stock4,432 |
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Standard | 100V | - | 1.2V @ 10A | 20µA @ 100V | -65°C ~ 150°C (TJ) | Surface Mount | 4-Square, NB | NB |
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Microsemi Corporation |
POWER MODULE DIODE 1200V 40A SP1
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Current - Reverse Leakage @ Vr: 800µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock4,352 |
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Silicon Carbide Schottky | 1200V | 40A | 1.8V @ 40A | 800µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
POWER MODULE DIODE 600V 40A SP1
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Current - Reverse Leakage @ Vr: 800µA @ 600V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock6,400 |
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Silicon Carbide Schottky | 600V | 40A | 1.8V @ 40A | 800µA @ 600V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP6
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1700V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
- Current - Reverse Leakage @ Vr: 350µA @ 1700V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock5,904 |
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Standard | 1700V | 240A | 3V @ 200A | 350µA @ 1700V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
RECT BRIDGE 20A 1200V SP1
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Current - Reverse Leakage @ Vr: 400µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock3,312 |
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Silicon Carbide Schottky | 1200V | 20A | 1.8V @ 20A | 400µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
RECT BRIDGE 40A 600V SOT227
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Current - Reverse Leakage @ Vr: 800µA @ 600V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock7,344 |
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Silicon Carbide Schottky | 600V | 40A | 1.8V @ 40A | 800µA @ 600V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Microsemi Corporation |
RECT BRIDGE 20A 1200V SOT227
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Current - Reverse Leakage @ Vr: 400µA @ 1200V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock3,968 |
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Silicon Carbide Schottky | 1200V | 20A | 1.8V @ 20A | 400µA @ 1200V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP6
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 235A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
- Current - Reverse Leakage @ Vr: 150µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock3,840 |
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Standard | 1200V | 235A | 3V @ 200A | 150µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP6
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 255A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 200A
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock3,152 |
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Standard | 1000V | 255A | 2.7V @ 200A | 100µA @ 1000V | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
RECT BRIDGE 20A 600V SP1
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Current - Reverse Leakage @ Vr: 400µA @ 600V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock5,536 |
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Silicon Carbide Schottky | 600V | 20A | 1.8V @ 20A | 400µA @ 600V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP4
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1700V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 100A
- Current - Reverse Leakage @ Vr: 250µA @ 1700V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,512 |
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Standard | 1700V | 120A | 2.5V @ 100A | 250µA @ 1700V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
DIODE BRIDGE 1600V 200A SM3
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
- Current - Reverse Leakage @ Vr: 300µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M3
- Supplier Device Package: M3
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Package: M3 |
Stock6,928 |
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Standard | 1600V | 200A | 1.55V @ 300A | 300µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | M3 | M3 |
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Microsemi Corporation |
MOD DIODE GPP 1600V 160A M3
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 160A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
- Current - Reverse Leakage @ Vr: 500µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M3
- Supplier Device Package: M3
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Package: M3 |
Stock6,544 |
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Standard | 1600V | 160A | 1.65V @ 300A | 500µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | M3 | M3 |
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Microsemi Corporation |
DIODE BRIDGE 3PH 1200V 160A SM3
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 160A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
- Current - Reverse Leakage @ Vr: 500µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M3
- Supplier Device Package: M3
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Package: M3 |
Stock4,848 |
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Standard | 1200V | 160A | 1.65V @ 300A | 500µA @ 1200V | -40°C ~ 150°C (TJ) | Chassis Mount | M3 | M3 |
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Microsemi Corporation |
DIODE SIC SCHOTTKY 1200V SOT227
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock6,928 |
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Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | 200µA @ 1200V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP4
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 130A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock2,704 |
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Standard | 1000V | 130A | 2.7V @ 100A | 100µA @ 1000V | -40°C ~ 175°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
DIODE BRIDGE 1600V 100A SM3
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
- Current - Reverse Leakage @ Vr: 300µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M3
- Supplier Device Package: M3
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Package: M3 |
Stock5,776 |
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Standard | 1600V | 100A | 1.9V @ 300A | 300µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | M3 | M3 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP4
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 145A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A
- Current - Reverse Leakage @ Vr: 250µA @ 200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,240 |
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Standard | 200V | 145A | 1.1V @ 100A | 250µA @ 200V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
DIODE BRIDGE 3PH 1200V 100A SM3
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M3
- Supplier Device Package: M3
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Package: M3 |
Stock5,680 |
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Standard | 1200V | 100A | 1.9V @ 300A | 300µA @ 1200V | -40°C ~ 150°C (TJ) | Chassis Mount | M3 | M3 |
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Microsemi Corporation |
DIODE MODULE FULL BRIDGE SP1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 135A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock2,160 |
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Standard | 600V | 135A | 2V @ 100A | 250µA @ 600V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
POWER MOD DIO FULL BRIDGE SP1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 82A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock3,216 |
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Standard | 1200V | 82A | 3V @ 60A | 100µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOD DIODE 1700V SOT-227
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1700V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 75A
- Current - Reverse Leakage @ Vr: 250µA @ 1700V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock3,568 |
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Standard | 1700V | 75A | 2.2V @ 75A | 250µA @ 1700V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Microsemi Corporation |
MOD BRIDGE 3PH 1600V 75A M2-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: M2-1
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Package: Module |
Stock6,224 |
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Standard | 1600V | 75A | 1.6V @ 150A | 500µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | Module | M2-1 |
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Microsemi Corporation |
RECT BRIDGE MOD 3PHASE 1600V SP1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 40A
- Current - Reverse Leakage @ Vr: 20µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock3,088 |
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Standard | 1600V | 40A | 1.3V @ 40A | 20µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
DIODE MODULE FULL BRDG 600V SP1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 92A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 60A
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock4,496 |
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Standard | 600V | 92A | 2.3V @ 60A | 25µA @ 600V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |