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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: A, Axial |
Stock6,804 |
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400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 2.5A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 2µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: 175°C (Max)
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Package: A, Axial |
Stock5,184 |
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150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Through Hole | A, Axial | - | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 125V 300MA D5D
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 50nA @ 20V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, D
- Supplier Device Package: D-5D
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, D |
Stock6,516 |
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125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 3A D5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock7,664 |
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400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 500nA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: A, Axial |
Stock5,344 |
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1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 300mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, D
- Supplier Device Package: D-5D
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, D |
Stock5,392 |
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75V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: B, Axial |
Stock4,928 |
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600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock6,416 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock7,504 |
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200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock6,816 |
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50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 500nA @ 75V
- Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AH, DO-35, Axial |
Stock6,480 |
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75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 15A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 260ns
- Current - Reverse Leakage @ Vr: 250µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-3 |
Stock4,912 |
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1000V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1000V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 150MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 50nA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock8,472 |
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50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock20,316 |
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50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220 [K]
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock15,696 |
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600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 500nA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock294,348 |
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75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.4V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 19ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220 [K]
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock131,976 |
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600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 35A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock4,960 |
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600V | 35A | 1.4V @ 110A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE MODULE 600V 500A LP4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 500A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 115ns
- Current - Reverse Leakage @ Vr: 2.5mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: LP4
- Supplier Device Package: LP4
- Operating Temperature - Junction: -
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Package: LP4 |
Stock6,000 |
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600V | 500A | 1.8V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 2.5mA @ 600V | - | Chassis Mount | LP4 | LP4 | - |
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Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 99A
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 99A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 600µA @ 1200V
- Capacitance @ Vr, F: 2100pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-247-2 |
Stock6,864 |
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1200V | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 4A B-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 1nA @ 125V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, B |
Stock6,648 |
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- | 4A (DC) | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Capacitance @ Vr, F: 35pF @ 12V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock12,732 |
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400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock18,312 |
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225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA (Glass) |
Stock5,664 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 1nA @ 125V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, B |
Stock14,616 |
|
- | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: B, Axial |
Stock13,104 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock4,064 |
|
225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: B, Axial |
Stock16,176 |
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100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |