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Microsemi Corporation |
TRANS 8NPN DARL 50V 0.5A 18DIP
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 18-CDIP
|
Package: - |
Stock4,144 |
|
500mA | 50V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | -55°C ~ 125°C (TA) | Through Hole | - | 18-CDIP |
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Microsemi Corporation |
TRANS 7NPN DARL 95V 0.5A 16DIP
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 95V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CDIP
|
Package: 16-CDIP (0.300", 7.62mm) |
Stock6,720 |
|
500mA | 95V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | 150°C (TJ) | Through Hole | 16-CDIP (0.300", 7.62mm) | 16-CDIP |
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Microsemi Corporation |
TRANS 7NPN DARL 50V 0.5A 16DIP
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CDIP
|
Package: 16-CDIP (0.300", 7.62mm) |
Stock5,040 |
|
500mA | 50V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | 150°C (TJ) | Through Hole | 16-CDIP (0.300", 7.62mm) | 16-CDIP |
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Microsemi Corporation |
TRANS 7NPN DARL 50V 0.5A 16DIP
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CDIP
|
Package: 16-CDIP (0.300", 7.62mm) |
Stock6,656 |
|
500mA | 50V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | 150°C (TJ) | Through Hole | 16-CDIP (0.300", 7.62mm) | 16-CDIP |
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Microsemi Corporation |
TRANS 7NPN DARL 50V 0.5A 16DIP
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CDIP
|
Package: 16-CDIP (0.300", 7.62mm) |
Stock75,336 |
|
500mA | 50V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | 150°C (TJ) | Through Hole | 16-CDIP (0.300", 7.62mm) | 16-CDIP |
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Microsemi Corporation |
TRANS 2NPN 60V 0.5A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Power - Max: 2.12W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock2,976 |
|
500mA | 60V | 300mV @ 5mA, 50mA | 10µA (ICBO) | 50 @ 10mA, 5V | 2.12W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Microsemi Corporation |
TRANS 2NPN 60V 0.5A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Power - Max: 2.12W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock3,376 |
|
500mA | 60V | 300mV @ 5mA, 50mA | 10µA (ICBO) | 50 @ 10mA, 5V | 2.12W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Microsemi Corporation |
TRANS 2NPN 60V 0.03A
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
|
Package: 3-SMD, No Lead |
Stock5,648 |
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30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
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Microsemi Corporation |
TRANS 4NPN 50V 0.8A 14PIN
- Transistor Type: 4 NPN (Quad)
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-Flatpack
- Supplier Device Package: 14-Flatpack
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Package: 14-Flatpack |
Stock4,432 |
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800mA | 50V | 1V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 14-Flatpack | 14-Flatpack |
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Microsemi Corporation |
TRANS 2NPN 60V 0.03A
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
|
Package: 3-SMD, No Lead |
Stock3,328 |
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30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
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Microsemi Corporation |
TRANS 4NPN 50V 0.8A TO116
- Transistor Type: 4 NPN (Quad)
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: TO-116
|
Package: 14-DIP (0.300", 7.62mm) |
Stock7,072 |
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800mA | 50V | 1V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | TO-116 |
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Microsemi Corporation |
TRANS 4PNP 60V 0.6A
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-Flatpack
- Supplier Device Package: 14-Flatpack
|
Package: 14-Flatpack |
Stock4,576 |
|
600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 14-Flatpack | 14-Flatpack |
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Microsemi Corporation |
TRANS 4PNP 60V 0.6A TO116
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: -
|
Package: 14-DIP (0.300", 7.62mm) |
Stock5,296 |
|
600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | - |
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Microsemi Corporation |
TRANS 4PNP 60V 0.6A TO116
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: -
|
Package: 14-DIP (0.300", 7.62mm) |
Stock6,256 |
|
600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | - |
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Microsemi Corporation |
TRANS 2NPN 60V 0.5A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Power - Max: 2.12W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock3,760 |
|
500mA | 60V | 300mV @ 5mA, 50mA | 10µA (ICBO) | 50 @ 10mA, 5V | 2.12W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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|
Microsemi Corporation |
TRANS 4NPN 50V 0.8A TO116
- Transistor Type: 4 NPN (Quad)
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: TO-116
|
Package: 14-DIP (0.300", 7.62mm) |
Stock5,712 |
|
800mA | 50V | 1V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | TO-116 |
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Microsemi Corporation |
TRANS 2PNP 60V 0.05A
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock2,640 |
|
50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Microsemi Corporation |
TRANS 4PNP 60V 0.6A TO116
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: -
|
Package: 14-DIP (0.300", 7.62mm) |
Stock3,568 |
|
600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | - |
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Microsemi Corporation |
TRANS 2NPN 60V 0.03A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock3,504 |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 300 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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|
Microsemi Corporation |
TRANS 2NPN 60V 0.03A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock6,016 |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
|
|
Microsemi Corporation |
TRANS 2NPN 60V 0.03A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock2,176 |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
|
|
Microsemi Corporation |
TRANS 2NPN 60V 0.03A TO78
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock7,376 |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
|
|
Microsemi Corporation |
TRANS 2NPN 60V 0.03A
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
|
Package: 3-SMD, No Lead |
Stock3,760 |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 300 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
|
|
Microsemi Corporation |
TRANS 2NPN 60V 0.03A
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
|
Package: 3-SMD, No Lead |
Stock6,288 |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
|
|
Microsemi Corporation |
TRANS 2PNP 60V 0.05A
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: TO-78-6 Metal Can |
Stock6,064 |
|
50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
|
|
Microsemi Corporation |
TRANS 2NPN 60V 0.03A
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
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Package: 3-SMD, No Lead |
Stock3,472 |
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30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
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Microsemi Corporation |
TRANS 4NPN 50V 0.8A 14PIN
- Transistor Type: 4 NPN (Quad)
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-Flatpack
- Supplier Device Package: 14-Flatpack
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Package: 14-Flatpack |
Stock5,872 |
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800mA | 50V | 1V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 14-Flatpack | 14-Flatpack |
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Microsemi Corporation |
TRANS 4NPN 50V 0.8A TO116
- Transistor Type: 4 NPN (Quad)
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: TO-116
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Package: 14-DIP (0.300", 7.62mm) |
Stock3,952 |
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800mA | 50V | 1V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | TO-116 |