Microsemi Corporation Products - Transistors - Bipolar (BJT) - Single

JANSR2N2221AUB
Microsemi Corporation

TRANS NPN 50V 0.8A UB

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JAN2N5014
Microsemi Corporation

TRANS NPN 900V 0.2A TO5

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JAN2N7369
Microsemi Corporation

TRANS PNP 80V 10A TO254AA

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2N5015S
Microsemi Corporation

TRANS NPN 1000V 0.2A TO39

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JANTXV2N5014
Microsemi Corporation

TRANS NPN 900V 0.2A TO5

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2N5099
Microsemi Corporation

TRANS NPN 800V 1A TO5

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2N5097
Microsemi Corporation

TRANS NPN 600V 1A TO5

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2N5095
Microsemi Corporation

TRANS NPN 500V 1A TO5

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2N5092
Microsemi Corporation

NPN SILICON TRANSISTOR

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2N5093
Microsemi Corporation

NPN SILICON TRANSISTOR

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2N5091
Microsemi Corporation

NPN SILICON TRANSISTOR

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2N5010
Microsemi Corporation

NPN SILICON TRANSISTOR

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2N5011
Microsemi Corporation

NPN SILICON TRANSISTOR

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2N5014
Microsemi Corporation

TRANS NPN 900V 0.2A TO5

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2N5015
Microsemi Corporation

TRANS NPN 1000V 0.2A TO5

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2N5012
Microsemi Corporation

TRANS NPN 700V 0.2A TO5

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2N5013
Microsemi Corporation

TRANS NPN 800V 0.2A TO5

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2N6250
Microsemi Corporation

NPN TRANSISTOR

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2N6249
Microsemi Corporation

NPN TRANSISTOR

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JANTX2N3019-TR
Microsemi Corporation

TRANS NPN 80V 1A TO5

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Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANSR2N2221AUB	Microsemi Corporation	TRANS NPN 50V 0.8A UB Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Package: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JAN2N5014	Microsemi Corporation	TRANS NPN 900V 0.2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 900 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	900 V	-	10nA (ICBO)	30 @ 20mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JAN2N7369	Microsemi Corporation	TRANS PNP 80V 10A TO254AA Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Power - Max: 115 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA	Package: -	Request a Quote	10 A	80 V	1V @ 500mA, 5A	5mA	50 @ 1A, 2V	115 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA	TO-254AA
2N5015S	Microsemi Corporation	TRANS NPN 1000V 0.2A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 1000 V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 5mA, 20mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Package: -	Request a Quote	200 mA	1000 V	1.8V @ 5mA, 20mA	10nA (ICBO)	30 @ 20mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N5014	Microsemi Corporation	TRANS NPN 900V 0.2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 900 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	900 V	-	10nA (ICBO)	30 @ 20mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5099	Microsemi Corporation	TRANS NPN 800V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 4 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	1 A	800 V	-	-	-	4 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5097	Microsemi Corporation	TRANS NPN 600V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 600 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 4 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	1 A	600 V	-	-	-	4 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5095	Microsemi Corporation	TRANS NPN 500V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 500 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 4 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	1 A	500 V	-	-	-	4 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5092	Microsemi Corporation	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5093	Microsemi Corporation	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5091	Microsemi Corporation	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5010	Microsemi Corporation	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 500 V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 5mA, 25mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	500 V	1.4V @ 5mA, 25mA	10nA (ICBO)	30 @ 25mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5011	Microsemi Corporation	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 600 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 25mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	600 V	1.5V @ 5mA, 25mA	10nA (ICBO)	30 @ 25mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5014	Microsemi Corporation	TRANS NPN 900V 0.2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 900 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	900 V	-	10nA (ICBO)	30 @ 20mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5015	Microsemi Corporation	TRANS NPN 1000V 0.2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 1000 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	1000 V	-	10nA (ICBO)	30 @ 20mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5012	Microsemi Corporation	TRANS NPN 700V 0.2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 700 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	700 V	-	10nA (ICBO)	30 @ 25mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5013	Microsemi Corporation	TRANS NPN 800V 0.2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	200 mA	800 V	-	10nA (ICBO)	30 @ 20mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N6250	Microsemi Corporation	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 275 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	Package: -	Request a Quote	10 A	275 V	1.5V @ 1.25A, 10A	1mA	8 @ 10A, 3V	6 W	-	-65°C ~ 200°C	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)
2N6249	Microsemi Corporation	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	Package: -	Request a Quote	10 A	200 V	1.5V @ 1A, 10A	1mA	10 @ 10A, 3V	6 W	-	-65°C ~ 200°C	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)
JANTX2N3019-TR	Microsemi Corporation	TRANS NPN 80V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	Package: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10µA (ICBO)	50 @ 500mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANSF2N2221AUB	Microsemi Corporation	TRANS NPN 50V 0.8A UB Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Package: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N1016B	Microsemi Corporation	TRANS NPN 100V 7.5A TO82 Transistor Type: NPN Current - Collector (Ic) (Max): 7.5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 4V Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: TO-82	Package: -	Request a Quote	7.5 A	100 V	2.5V @ 1A, 5A	1mA	20 @ 2A, 4V	150 W	-	-65°C ~ 150°C (TJ)	-	-	TO-82
2N1016C	Microsemi Corporation	TRANS NPN 150V 7.5A TO82 Transistor Type: NPN Current - Collector (Ic) (Max): 7.5 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 4V Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: TO-82	Package: -	Request a Quote	7.5 A	150 V	2.5V @ 1A, 5A	1mA	10 @ 5A, 4V	150 W	-	-65°C ~ 150°C (TJ)	-	-	TO-82
2N1016D	Microsemi Corporation	TRANS NPN 200V 7.5A TO82 Transistor Type: NPN Current - Collector (Ic) (Max): 7.5 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 7.5A, 4V Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: TO-82	Package: -	Request a Quote	7.5 A	200 V	2.5V @ 1A, 5A	1mA	6 @ 7.5A, 4V	150 W	-	-65°C ~ 150°C (TJ)	-	-	TO-82
STN1116	Microsemi Corporation	TRANSISTOR NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N6251T1	Microsemi Corporation	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA	Package: -	Request a Quote	10 A	350 V	1.5V @ 1.67A, 10A	1mA	6 @ 10A, 3V	6 W	-	-65°C ~ 200°C	Through Hole	TO-254-3, TO-254AA	TO-254AA
2N6249T1	Microsemi Corporation	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA	Package: -	Request a Quote	10 A	200 V	1.5V @ 1A, 10A	1mA	10 @ 10A, 3V	6 W	-	-65°C ~ 200°C	Through Hole	TO-254-3, TO-254AA	TO-254AA
JANTX2N3251A	Microsemi Corporation	TRANS PNP 60V 0.2A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	Package: -	Request a Quote	200 mA	60 V	500mV @ 5mA, 50mA	10µA (ICBO)	100 @ 10mA, 1V	360 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)