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|
Microsemi Corporation |
TRANS NPN 300V 5A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock4,768 |
|
5A | 300V | 1V @ 1A, 5A | 200nA | 25 @ 1A, 5V | 1.2W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
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Microsemi Corporation |
TRANS NPN 300V 5A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock5,840 |
|
5A | 300V | 1V @ 1A, 5A | 200nA | 25 @ 1A, 5V | 1.2W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
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Microsemi Corporation |
TRANS NPN 300V 5A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock6,096 |
|
5A | 300V | 1V @ 1A, 5A | 200nA | 25 @ 1A, 5V | 1.2W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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|
Microsemi Corporation |
TRANS NPN 200V 5A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock5,824 |
|
5A | 200V | 1V @ 5A, 1A | 200nA | 40 @ 1A, 5V | 1.2W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
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Microsemi Corporation |
TRANS NPN 200V 5A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock3,264 |
|
5A | 200V | 1V @ 5A, 1A | 200nA | 40 @ 1A, 5V | 1.2W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
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Microsemi Corporation |
TRANS NPN 200V 5A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: TO-205AA, TO-5-3 Metal Can |
Stock7,344 |
|
5A | 200V | 1V @ 5A, 1A | 200nA | 40 @ 1A, 5V | 1.2W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Microsemi Corporation |
TRANS NPN 200V 5A TO66
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Power - Max: 2.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: TO-213AA, TO-66-2 |
Stock4,240 |
|
5A | 200V | 1V @ 5A, 1A | 200nA | 40 @ 1A, 5V | 2.5W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Microsemi Corporation |
TRANS PNP 300V 1A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock3,664 |
|
1A | 300V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microsemi Corporation |
TRANS PNP 300V 1A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock5,824 |
|
1A | 300V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microsemi Corporation |
TRANS PNP 300V 1A TO5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: TO-205AA, TO-5-3 Metal Can |
Stock6,480 |
|
1A | 300V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
|
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Microsemi Corporation |
TRANS PNP 200V 1A TO-5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: TO-205AA, TO-5-3 Metal Can |
Stock7,232 |
|
1A | 200V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Microsemi Corporation |
TRANS NPN 120V 10A TO-5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: TO-205AA, TO-5-3 Metal Can |
Stock2,016 |
|
10A | 120V | 2.5V @ 1A, 10A | 10µA | 40 @ 5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
|
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Microsemi Corporation |
TRANS NPN 80V 2A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: TO-205AA, TO-5-3 Metal Can |
Stock3,120 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Microsemi Corporation |
TRANS NPN 80V 2A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock5,760 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Microsemi Corporation |
TRANS NPN 80V 2A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock4,048 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Microsemi Corporation |
TRANS NPN 80V 2A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock4,080 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Microsemi Corporation |
TRANS PNP 80V 2A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock2,928 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Microsemi Corporation |
TRANS NPN 80V 5A TO59
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
|
Package: TO-210AA, TO-59-4, Stud |
Stock3,232 |
|
5A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 2W | - | -65°C ~ 200°C (TJ) | Chassis, Stud Mount | TO-210AA, TO-59-4, Stud | TO-59 |
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Microsemi Corporation |
TRANS PNP TO-39
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,584 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Microsemi Corporation |
TRANS PNP 15V 0.03A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
- Power - Max: 200mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: 3-SMD, No Lead |
Stock6,672 |
|
30mA | 15V | 350mV @ 1mA, 10mA | 10µA (ICBO) | 30 @ 10mA, 1V | 200mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
|
|
Microsemi Corporation |
TRANS PNP 80V 1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: 3-SMD, No Lead |
Stock5,776 |
|
1A | 80V | 1V @ 100mA, 1A | 10µA (ICBO) | 100 @ 100mA, 5V | 500mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
|
|
Microsemi Corporation |
TRANS NPN 80V 10A TO59
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
|
Package: TO-210AA, TO-59-4, Stud |
Stock6,480 |
|
10A | 80V | 2V @ 500mA, 5A | 10µA | 80 @ 1A, 2V | 2W | - | -65°C ~ 200°C (TJ) | Chassis, Stud Mount | TO-210AA, TO-59-4, Stud | TO-59 |
|
|
Microsemi Corporation |
TRANS NPN 80V 10A TO111
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: TO-111-4, Stud |
Stock2,320 |
|
10A | 80V | 2V @ 500mA, 5A | 10µA | 80 @ 1A, 2V | 2W | - | -65°C ~ 200°C (TJ) | Chassis, Stud Mount | TO-111-4, Stud | TO-111 |
|
|
Microsemi Corporation |
TRANS NPN 80V 10A TO111
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: TO-111-4, Stud |
Stock7,024 |
|
10A | 80V | 2V @ 500mA, 5A | 10µA | 80 @ 1A, 2V | 2W | - | -65°C ~ 200°C (TJ) | Chassis, Stud Mount | TO-111-4, Stud | TO-111 |
|
|
Microsemi Corporation |
TRANS NPN 80V 10A TO111
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: TO-111-4, Stud |
Stock7,984 |
|
10A | 80V | 2V @ 500mA, 5A | 10µA | 40 @ 1A, 2V | 2W | - | -65°C ~ 200°C (TJ) | Chassis, Stud Mount | TO-111-4, Stud | TO-111 |
|
|
Microsemi Corporation |
TRANS NPN 12V UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: 3-SMD, No Lead |
Stock2,800 |
|
- | 12V | 300mV @ 3mA, 30mA | 10µA (ICBO) | 60 @ 10mA, 1V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
|
|
Microsemi Corporation |
TRANS NPN 12V UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: 3-SMD, No Lead |
Stock2,704 |
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- | 12V | 300mV @ 3mA, 30mA | 10µA (ICBO) | 60 @ 10mA, 1V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Microsemi Corporation |
TRANS NPN 12V UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: 3-SMD, No Lead |
Stock6,720 |
|
- | 12V | 300mV @ 3mA, 30mA | 10µA (ICBO) | 60 @ 10mA, 1V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |