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Microsemi Corporation |
MOSFET 2N-CH 100V 139A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 139A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,296 |
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Standard | 100V | 139A | 10 mOhm @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 72A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 416W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock7,168 |
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Standard | 600V | 72A | 35 mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 72A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 416W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock7,088 |
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Standard | 600V | 72A | 35 mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 4N-CH 100V 70A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock2,768 |
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Standard | 100V | 70A | 21 mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 4N-CH 600V 39A SP3F
- FET Type: 4 N-Channel (H-Bridge) + Bridge Rectifier
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,504 |
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Standard | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | - | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 4N-CH 1000V 19A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 19A
- Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock3,552 |
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Standard | 1000V (1kV) | 19A | 552 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 4N-CH 600V 39A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,520 |
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Standard | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 3N-CH 600V 36A SP1
- FET Type: 3 N Channel (Phase Leg + Boost Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 36A
- Rds On (Max) @ Id, Vgs: 83 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock5,424 |
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Super Junction | 600V | 36A | 83 mOhm @ 24.5A, 10V | 5V @ 3mA | 250nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 3N-CH 600V 36A SP1
- FET Type: 3 N Channel (Phase Leg + Boost Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 36A
- Rds On (Max) @ Id, Vgs: 83 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock7,776 |
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Super Junction | 600V | 36A | 83 mOhm @ 24.5A, 10V | 5V @ 3mA | 250nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 36A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 36A
- Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7290pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock4,176 |
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Standard | 600V | 36A | 83 mOhm @ 18A, 10V | 5V @ 3mA | 255nC @ 10V | 7290pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Microsemi Corporation |
MOSFET 2N-CH 500V 37A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 37A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
- Power - Max: 312W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock7,744 |
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Standard | 500V | 37A | 120 mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V | 312W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 37A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 37A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
- Power - Max: 312W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,776 |
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Standard | 500V | 37A | 120 mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V | 312W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 66A SP2
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 66A
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
- Power - Max: 416W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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Package: SP2 |
Stock7,936 |
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Super Junction | 600V | 66A | 42 mOhm @ 33A, 10V | 5V @ 6mA | 510nC @ 10V | 14600pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP2 | SP2 |
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Microsemi Corporation |
MOSFET 4N-CH 600V 39A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock3,408 |
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Standard | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 72A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 416W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock2,832 |
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Standard | 600V | 72A | 35 mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 4N-CH 800V 28A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Power - Max: 277W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,352 |
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Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 49A SP1
- FET Type: 2 N-Channel (Dual)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock3,568 |
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Super Junction | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 49A SP1
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock3,072 |
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Super Junction | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 49A SP1
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock7,760 |
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Super Junction | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 4N-CH 800V 28A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Power - Max: 277W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock6,080 |
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Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 4N-CH 1200V 8A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock3,216 |
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Standard | 1200V (1.2kV) | 8A | 1.68 Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | 3812pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 51A SP3
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock7,664 |
|
Standard | 500V | 51A | 78 mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | 10800pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 49A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock7,984 |
|
Standard | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 100V 70A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock5,728 |
|
Standard | 100V | 70A | 21 mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 100V 70A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock3,232 |
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Standard | 100V | 70A | 21 mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 800V 28A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Power - Max: 277W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,432 |
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Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 800V 28A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Power - Max: 277W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock6,752 |
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Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 40A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock6,448 |
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Standard | 600V | 40A | 132 mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | 10552pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |