Page 4 - Microsemi Corporation Products - Transistors - IGBTs - Single

APT40GP60SG
Microsemi Corporation

IGBT 600V 100A 543W D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,928
APT40GP60BG
Microsemi Corporation

IGBT 600V 100A 543W TO247

Package: TO-247-3

Stock5,120
APT30GP60BG
Microsemi Corporation

IGBT 600V 100A 463W TO247

Package: TO-247-3

Stock8,664
APT25GP120BG
Microsemi Corporation

IGBT 1200V 69A 417W TO247

Package: TO-247-3

Stock4,128
APT50GS60BRDLG
Microsemi Corporation

IGBT 600V 93A 415W TO247

Package: TO-247-3

Stock4,720
APT30GP60LDLG
Microsemi Corporation

IGBT 600V 100A 463W TO264

Package: TO-264-3, TO-264AA

Stock6,256
APT50GR120L
Microsemi Corporation

IGBT 1200V 117A 694W TO264

Package: TO-264-3, TO-264AA

Stock4,512
APT30GP60B2DLG
Microsemi Corporation

IGBT 600V 100A 463W TMAX

Package: TO-247-3

Stock2,832
APT25GN120B2DQ2G
Microsemi Corporation

IGBT 1200V 67A 272W TMAX

Package: TO-247-3 Variant

Stock5,248
APT45GR65SSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,432
APT25GP90BDQ1G
Microsemi Corporation

IGBT 900V 72A 417W TO247

Package: TO-247-3

Stock5,504
APT25GP90BG
Microsemi Corporation

IGBT 900V 72A 417W TO247

Package: TO-247-3

Stock5,904
APT45GR65BSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Package: TO-247-3

Stock5,088
APT70GR65B2DU40
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Package: TO-247-3

Stock4,752
APT15GP60BDLG
Microsemi Corporation

IGBT 600V 56A 250W TO247

Package: TO-247-3

Stock6,960
APT54GA60BD30
Microsemi Corporation

IGBT 600V 96A 416W TO247

Package: TO-247-3

Stock2,544
APT15GP90BG
Microsemi Corporation

IGBT 900V 43A 250W TO247

Package: TO-247-3

Stock3,520
APT13GP120BDQ1G
Microsemi Corporation

IGBT 1200V 41A 250W TO247

Package: TO-247-3

Stock4,688
APT30GS60BRDLG
Microsemi Corporation

IGBT 600V 54A 250W TO247

Package: TO-247-3

Stock6,480
APT50GS60BRG
Microsemi Corporation

IGBT 600V 93A 415W TO247

Package: TO-247-3

Stock2,896

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APT40GP60SG	Microsemi Corporation	IGBT 600V 100A 543W D3PAK IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 543W Switching Energy: 385µJ (on), 352µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/64ns Test Condition: 400V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3 [S]	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,928	600V	100A	160A	2.7V @ 15V, 40A	543W	385µJ (on), 352µJ (off)	Standard	135nC	20ns/64ns	400V, 40A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	D3 [S]
APT40GP60BG	Microsemi Corporation	IGBT 600V 100A 543W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 543W Switching Energy: 385µJ (on), 352µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/64ns Test Condition: 400V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock5,120	600V	100A	160A	2.7V @ 15V, 40A	543W	385µJ (on), 352µJ (off)	Standard	135nC	20ns/64ns	400V, 40A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT30GP60BG	Microsemi Corporation	IGBT 600V 100A 463W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock8,664	600V	100A	100A	2.7V @ 15V, 30A	463W	260µJ (on), 250µJ (off)	Standard	90nC	13ns/55ns	400V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT25GP120BG	Microsemi Corporation	IGBT 1200V 69A 417W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 69A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 500µJ (on), 438µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 12ns/70ns Test Condition: 600V, 25A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock4,128	1200V	69A	90A	3.9V @ 15V, 25A	417W	500µJ (on), 438µJ (off)	Standard	110nC	12ns/70ns	600V, 25A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT50GS60BRDLG	Microsemi Corporation	IGBT 600V 93A 415W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 93A Current - Collector Pulsed (Icm): 195A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: 415W Switching Energy: 755µJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 50A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock4,720	600V	93A	195A	3.15V @ 15V, 50A	415W	755µJ (off)	Standard	235nC	16ns/225ns	400V, 50A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
APT30GP60LDLG	Microsemi Corporation	IGBT 600V 100A 463W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	Package: TO-264-3, TO-264AA	Stock6,256	600V	100A	120A	2.7V @ 15V, 30A	463W	260µJ (on), 250µJ (off)	Standard	90nC	13ns/55ns	400V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
APT50GR120L	Microsemi Corporation	IGBT 1200V 117A 694W TO264 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Power - Max: 694W Switching Energy: 2.14mJ (on), 1.48mJ (off) Input Type: Standard Gate Charge: 445nC Td (on/off) @ 25°C: 28ns/237ns Test Condition: 600V, 50A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	Package: TO-264-3, TO-264AA	Stock4,512	1200V	117A	200A	3.2V @ 15V, 50A	694W	2.14mJ (on), 1.48mJ (off)	Standard	445nC	28ns/237ns	600V, 50A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
APT30GP60B2DLG	Microsemi Corporation	IGBT 600V 100A 463W TMAX IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX?	Package: TO-247-3	Stock2,832	600V	100A	120A	2.7V @ 15V, 30A	463W	260µJ (on), 250µJ (off)	Standard	90nC	13ns/55ns	400V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	T-MAX?
APT25GN120B2DQ2G	Microsemi Corporation	IGBT 1200V 67A 272W TMAX IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 67A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 272W Switching Energy: 2.15µJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	Package: TO-247-3 Variant	Stock5,248	1200V	67A	75A	2.1V @ 15V, 25A	272W	2.15µJ (off)	Standard	155nC	22ns/280ns	800V, 25A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
APT45GR65SSCD10	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 118A Current - Collector Pulsed (Icm): 224A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 543W Switching Energy: - Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D3Pak	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,432	650V	118A	224A	2.4V @ 15V, 45A	543W	-	Standard	203nC	15ns/100ns	433V, 45A, 4.3 Ohm, 15V	80ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D3Pak
APT25GP90BDQ1G	Microsemi Corporation	IGBT 900V 72A 417W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 72A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 370µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 600V, 40A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock5,504	900V	72A	110A	3.9V @ 15V, 25A	417W	370µJ (off)	Standard	110nC	13ns/55ns	600V, 40A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT25GP90BG	Microsemi Corporation	IGBT 900V 72A 417W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 72A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 370µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 600V, 25A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock5,904	900V	72A	110A	3.9V @ 15V, 25A	417W	370µJ (off)	Standard	110nC	13ns/55ns	600V, 25A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT45GR65BSCD10	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 118A Current - Collector Pulsed (Icm): 224A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 543W Switching Energy: - Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock5,088	650V	118A	224A	2.4V @ 15V, 45A	543W	-	Standard	203nC	15ns/100ns	433V, 45A, 4.3 Ohm, 15V	80ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
APT70GR65B2DU40	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Power - Max: 595W Switching Energy: - Input Type: Standard Gate Charge: 305nC Td (on/off) @ 25°C: 18ns/170ns Test Condition: 433V, 70A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX? [B2]	Package: TO-247-3	Stock4,752	650V	134A	280A	2.4V @ 15V, 70A	595W	-	Standard	305nC	18ns/170ns	433V, 70A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	T-MAX? [B2]
APT15GP60BDLG	Microsemi Corporation	IGBT 600V 56A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,960	600V	56A	65A	2.7V @ 15V, 15A	250W	130µJ (on), 121µJ (off)	Standard	55nC	8ns/29ns	400V, 15A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
APT54GA60BD30	Microsemi Corporation	IGBT 600V 96A 416W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 161A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 416W Switching Energy: 534µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 17ns/112ns Test Condition: 400V, 32A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock2,544	600V	96A	161A	2.5V @ 15V, 32A	416W	534µJ (on), 466µJ (off)	Standard	28nC	17ns/112ns	400V, 32A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT15GP90BG	Microsemi Corporation	IGBT 900V 43A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Power - Max: 250W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 9ns/33ns Test Condition: 600V, 15A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock3,520	900V	43A	60A	3.9V @ 15V, 15A	250W	200µJ (off)	Standard	60nC	9ns/33ns	600V, 15A, 4.3 Ohm, 15V	-	-	Through Hole	TO-247-3	TO-247 [B]
APT13GP120BDQ1G	Microsemi Corporation	IGBT 1200V 41A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 115µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock4,688	1200V	41A	50A	3.9V @ 15V, 13A	250W	115µJ (on), 165µJ (off)	Standard	55nC	9ns/28ns	600V, 13A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT30GS60BRDLG	Microsemi Corporation	IGBT 600V 54A 250W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 113A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: 250W Switching Energy: 570µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/360ns Test Condition: 400V, 30A, 9.1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,480	600V	54A	113A	3.15V @ 15V, 30A	250W	570µJ (off)	Standard	145nC	16ns/360ns	400V, 30A, 9.1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
APT50GS60BRG	Microsemi Corporation	IGBT 600V 93A 415W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 93A Current - Collector Pulsed (Icm): 195A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: 415W Switching Energy: 755µJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 50A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock2,896	600V	93A	195A	3.15V @ 15V, 50A	415W	755µJ (off)	Standard	235nC	16ns/225ns	400V, 50A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT44GA60BD30	Microsemi Corporation	IGBT 600V 78A 337W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 258µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/84ns Test Condition: 400V, 26A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock4,560	600V	78A	130A	2.5V @ 15V, 26A	337W	409µJ (on), 258µJ (off)	Standard	128nC	16ns/84ns	400V, 26A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT45GR65B2DU30	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 118A Current - Collector Pulsed (Icm): 224A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 543W Switching Energy: - Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX? [B2]	Package: TO-247-3	Stock2,800	650V	118A	224A	2.4V @ 15V, 45A	543W	-	Standard	203nC	15ns/100ns	433V, 45A, 4.3 Ohm, 15V	80ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	T-MAX? [B2]
APT44GA60B	Microsemi Corporation	IGBT 600V 78A 337W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 258µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/84ns Test Condition: 400V, 26A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock6,060	600V	78A	130A	2.5V @ 15V, 26A	337W	409µJ (on), 258µJ (off)	Standard	128nC	16ns/84ns	400V, 26A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT30GT60BRG	Microsemi Corporation	IGBT 600V 64A 250W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 525µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 12ns/225ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock5,872	600V	64A	110A	2.5V @ 15V, 30A	250W	525µJ (on), 600µJ (off)	Standard	145nC	12ns/225ns	400V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT15GN120BDQ1G	Microsemi Corporation	IGBT 1200V 45A 195W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 195W Switching Energy: 410µJ (on), 950µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 10ns/150ns Test Condition: 800V, 15A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock6,624	1200V	45A	45A	2.1V @ 15V, 15A	195W	410µJ (on), 950µJ (off)	Standard	90nC	10ns/150ns	800V, 15A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT13GP120BG	Microsemi Corporation	IGBT 1200V 41A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 115µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock6,944	1200V	41A	50A	3.9V @ 15V, 13A	250W	115µJ (on), 165µJ (off)	Standard	55nC	9ns/28ns	600V, 13A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT15GT60BRG	Microsemi Corporation	IGBT 600V 42A 184W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock6,880	600V	42A	45A	2.5V @ 15V, 15A	184W	150µJ (on), 215µJ (off)	Standard	75nC	6ns/105ns	400V, 15A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT15GP60BDQ1G	Microsemi Corporation	IGBT 600V 56A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock5,104	600V	56A	65A	2.7V @ 15V, 15A	250W	130µJ (on), 120µJ (off)	Standard	55nC	8ns/29ns	400V, 15A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]