Nexperia USA Inc. Products

MOSFET N-CH 40V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 16400pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TRANS NPN 15V 0.5A SOT883

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 430mW
• Frequency - Transition: 420MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: DFN1006-3

TRANS NPN 60V 1A 3DFN

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

TRANS NPN DARL 30V 0.5A SOT23

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 220MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

TRANS PNP 50V 3A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

TRANS NPN 60V 1A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1.35W
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

BZX384-B56/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

DIODE ZENER 27V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 18.9V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

DIODE ZENER ARRAY 5.6V SOT663

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 265mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-663
• Supplier Device Package: SOT-663

IC XTAL DRIVER LP 6XSON

• Logic Type: Inverter, X-Tal Driver
• Supply Voltage: 0.8 V ~ 3.6 V
• Number of Bits: -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1202 (1x1)

IC 3:8 DECODER/DEMUX INV 16SOIC

• Type: Decoder/Demultiplexer
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

IC 8BIT SHIFT REGISTER 16-TSSOP

• Logic Type: Shift Register
• Output Type: Tri-State
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Serial to Parallel, Serial
• Voltage - Supply: 1 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

IC GATE OR 3CH 3-INP 14-TSSOP

• Logic Type: OR Gate
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

IC GATE NAND 4CH 2-INP 14-DHVQFN

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: Schmitt Trigger
• Voltage - Supply: 1.2 V ~ 3.6 V
• Current - Quiescent (Max): 40µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.12 V ~ 0.8 V
• Logic Level - High: 1 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-DHVQFN (2.5x3)
• Package / Case: 14-VFQFN Exposed Pad

IC BUFFER/LINE DVR OCT 20SSOP

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 20-SSOP

IC BUFFER LOW PWR N-INV 5TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: 5-TSSOP

IC SWITCH QUAD 1X1 14SOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 20 Ohm (Typ)
• Channel-to-Channel Matching (ΔRon): 3 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 44ns, 30ns
• -3db Bandwidth: 200MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SO

TVS DIODE 7.5VWM 12.9VC SOD123W

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 31A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: CFP3

PDZ12B-Q/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±2%
• Power - Max: 400 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 9 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

74AUP2G14GW-Q100/SOT363/SC-88

• Logic Type: -
• Number of Circuits: -
• Number of Inputs: -
• Features: -
• Voltage - Supply: -
• Current - Quiescent (Max): -
• Current - Output High, Low: -
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

MOSFET P-CH 20V 4.9A TO236AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB
• Package / Case: TO-236-3, SC-59, SOT-23-3

DIODE ARR GP 90V 375MA DFN1412-6

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io) (per Diode): 375mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 80 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: DFN1412-6

PBLS4002Y-Q/SOT363/SC-88

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 500mA, 100mA
• Voltage - Collector Emitter Breakdown (Max): 40V, 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V / 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA / 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO), 1µA
• Frequency - Transition: 300MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

TRANS PREBIAS PNP 80V SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 150 MHz
• Power - Max: 235 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

BZX8450-C4V7/SOT23/TO-236AB

• Voltage - Zener (Nom) (Vz): 4.7 V
• Tolerance: ±5%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 3 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

BZT52H-B68-Q/SOD123F/SOD2

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±2.06%
• Power - Max: 375 mW
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

DIODE ZENER 9.05V 250MW TO236AB

• Voltage - Zener (Nom) (Vz): 9.05 V
• Tolerance: ±5%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

MOSFET P-CH 60V 40A LFPAK56

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 106W (Ta)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669