|
|
NXP |
TRANS PREBIAS PNP 250MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,776 |
|
100mA | 50V | 2.2k | - | 30 @ 20mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,904 |
|
100mA | 50V | 2.2k | 47k | 100 @ 10mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,120 |
|
100mA | 50V | 2.2k | 2.2k | 30 @ 20mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,128 |
|
100mA | 50V | 100k | - | 100 @ 1mA, 5V | 150mV @ 250µA, 5mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,912 |
|
20mA | 50V | 100k | 100k | 80 @ 5mA, 5V | 150mV @ 250µA, 5mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,416 |
|
100mA | 50V | 10k | 47k | 100 @ 5mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,880 |
|
100mA | 50V | 1k | 10k | 35 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 250MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,680 |
|
100mA | 50V | 1k | 10k | 35 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,200 |
|
100mA | 50V | 1k | 1k | 30 @ 40mA, 5V | 150mV @ 1.5mA, 30mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 250MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,024 |
|
100mA | 50V | 1k | 1k | 30 @ 40mA, 5V | 150mV @ 1.5mA, 30mA | 1µA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,240 |
|
800mA | 50V | 2.2k | 10k | - | - | - | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,608 |
|
800mA | 50V | 2.2k | 2.2k | - | - | - | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,768 |
|
800mA | 50V | 1k | 10k | - | - | - | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,864 |
|
800mA | 50V | 1k | 1k | - | - | - | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS NPN 0.7W TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 700mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,864 |
|
800mA | 40V | 2.2k | 10k | 500 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 700mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,216 |
|
600mA | 40V | 2.2k | 10k | 500 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 0.7W TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 700mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,320 |
|
800mA | 40V | 2.2k | 2.2k | 280 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 700mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,488 |
|
600mA | 40V | 2.2k | 2.2k | 280 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 0.7W TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 700mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,088 |
|
800mA | 40V | 1k | 10k | 500 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 700mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,304 |
|
600mA | 40V | 1k | 10k | 500 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 0.7W TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 700mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,448 |
|
800mA | 40V | 1k | 1k | 180 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 700mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,984 |
|
600mA | 40V | 1k | 1k | 180 @ 300mA, 5V | 1.15V @ 8mA, 800mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,488 |
|
500mA | 50V | 2.2k | 10k | 70 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,216 |
|
500mA | 50V | 2.2k | 2.2k | 40 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,664 |
|
500mA | 50V | 1k | 10k | 70 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 250MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,344 |
|
500mA | 50V | 1k | 1k | 33 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK |
|
|
NXP |
TRANS PREBIAS NPN 500MW TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,928 |
|
100mA | 50V | 47k | 22k | 60 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
NXP |
TRANS PREBIAS NPN 500MW TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,888 |
|
500mA | 50V | 2.2k | 10k | 70 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |