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ON Semiconductor |
MOSFET 2N-CH 20V 0.63A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
- Power - Max: 270mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock15,828 |
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Logic Level Gate | 20V | 630mA | 375 mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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ON Semiconductor |
MOSFET 2P-CH 8V 3.4A CHIPFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock287,424 |
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Logic Level Gate | 8V | 3.4A | 58 mOhm @ 3.4A, 4.5V | 1.5V @ 250µA | 16nC @ 2.5V | 715pF @ 6.4V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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ON Semiconductor |
MOSFET 2P-CH 20V 2.1A CHIPFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.1A
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock2,000 |
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Logic Level Gate | 20V | 2.1A | 155 mOhm @ 2.1A, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | 300pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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ON Semiconductor |
MOSFET 2N-CH 20V 3.1A CHIPFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.1A
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock4,080 |
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Logic Level Gate | 20V | 3.1A | 75 mOhm @ 3.1A, 4.5V | 600mV @ 250µA | 6nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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ON Semiconductor |
MOSFET 2P-CH 8V 3A CHIPFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock33,720 |
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Logic Level Gate | 8V | 3A | 90 mOhm @ 3A, 4.5V | 450mV @ 250µA | 9nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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ON Semiconductor |
MOSFET 2N-CH 30V 2.9A CHIPFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock360,000 |
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Logic Level Gate | 30V | 2.9A | 85 mOhm @ 2.9A, 10V | 1V @ 250µA | 7.5 nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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ON Semiconductor |
MOSFET 2N-CH 20V 6.6A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 16V
- Power - Max: 1.42W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock21,876 |
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Logic Level Gate | 20V | 6.6A | 22 mOhm @ 6.6A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 900pF @ 16V | 1.42W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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ON Semiconductor |
MOSFET 2N-CH 20V 4.7A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
- Power - Max: 940mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock89,748 |
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Logic Level Gate | 20V | 4.7A | 32 mOhm @ 6.9A, 4.5V | 1.2V @ 250µA | 22nC @ 4.5V | 1400pF @ 16V | 940mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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ON Semiconductor |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
- Power - Max: 2W
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,792 |
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Logic Level Gate | 30V | 2.2A, 1.8A | 90 mOhm @ 3A, 10V | 2.2V @ 250µA | 5nC @ 4.5V | 300pF @ 20V | 2W | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET N/P-CH 20V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,296 |
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Logic Level Gate | 20V | 5.2A, 3.4A | 43 mOhm @ 4A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1100pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 4N-CH 24V 11.4A 16PIN
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 11.4A
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 20V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-PowerQFN
- Supplier Device Package: PlnPAK
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Package: 16-PowerQFN |
Stock7,664 |
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Logic Level Gate | 24V | 11.4A | 11 mOhm @ 15A, 10V | 2V @ 250µA | 13nC @ 4.5V | 1605pF @ 20V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 16-PowerQFN | PlnPAK |
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ON Semiconductor |
MOSFET 2P-CH 16V 2.3A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 16V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
- Power - Max: 710mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,856 |
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Logic Level Gate | 16V | 2.3A | 100 mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | 750pF @ 16V | 710mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
- Power - Max: 1.29W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock582,492 |
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Logic Level Gate | 30V | 6A | 32 mOhm @ 6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 950pF @ 24V | 1.29W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2N-CH 20V 3.92A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.92A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
- Power - Max: 730mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,048 |
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Logic Level Gate | 20V | 3.92A | 35 mOhm @ 6A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1100pF @ 16V | 730mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2P-CH 20V 1.45A 8MICRO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.45A
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: Micro8?
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock4,992 |
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Logic Level Gate | 20V | 1.45A | 160 mOhm @ 1.45A, 4.5V | 1.4V @ 250µA | 10nC @ 4.5V | 265pF @ 16V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8? |
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ON Semiconductor |
MOSFET 2N-CH 25V 3.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock884,412 |
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Logic Level Gate | 25V | 3.6A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 30nC @ 10V | 532pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2P-CH 20V 3.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.3A
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock17,700 |
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Logic Level Gate | 20V | 3.3A | 160 mOhm @ 2A, 10V | 2V @ 250µA | 20nC @ 10V | 588pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET N/P-CH 30V 4.1A/3A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,800 |
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Logic Level Gate | 30V | 4.1A, 3A | 70 mOhm @ 3A, 10V | 3V @ 250µA | 16nC @ 10V | 630pF @ 24V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock4,992 |
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Standard | 30V | 11.3A, 18.1A | 5.4 mOhm @ 30A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1153pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock5,072 |
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Standard | 30V | 11.7A, 14.9A | 5.4 mOhm @ 30A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
- Power - Max: 1.13W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock6,528 |
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Standard | 30V | 15.4A, 29.7A | 3 mOhm @ 20A, 10V | 2.1V @ 250µA | 32nC @ 10V | 1960pF @ 15V | 1.13W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock2,768 |
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Standard | 30V | 11.7A, 14.9A | 5.4 mOhm @ 30A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock16,452 |
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Standard | 30V | 11.7A, 14.2A | 5.4 mOhm @ 10A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock3,712 |
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Standard | 30V | 11.7A, 14.2A | 5.4 mOhm @ 10A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/6.3A WDFN8
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
- Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
- Power - Max: 800mW, 810mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-WDFN (3x3)
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Package: 8-PowerWDFN |
Stock2,848 |
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Standard | 30V | 5.5A, 6.3A | 17.4 mOhm @ 9A, 10V | 2.2V @ 250µA | 12nC @ 10V | 605pF @ 15V | 800mW, 810mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3x3) |
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ON Semiconductor |
MOSFET 2N-CH 60V 6.4A 8DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.4A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Package: 8-PowerTDFN |
Stock3,520 |
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Logic Level Gate | 60V | 6.4A | 36 mOhm @ 15A, 10V | 2.5V @ 250µA | 23.4nC @ 10V | 668pF @ 25V | 3.1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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ON Semiconductor |
MOSFET 2N-CH 60V 6.4A 8DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.4A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Package: 8-PowerTDFN |
Stock3,296 |
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Logic Level Gate | 60V | 6.4A | 36 mOhm @ 15A, 10V | 2.5V @ 250µA | 23.4nC @ 10V | 668pF @ 25V | 3.1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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ON Semiconductor |
MOSFET 2N-CH 60V 6.4A 8DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.4A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Package: 8-PowerTDFN |
Stock3,488 |
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Logic Level Gate | 60V | 6.4A | 36 mOhm @ 15A, 10V | 2.5V @ 250µA | 23.4nC @ 10V | 668pF @ 25V | 3.1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |