|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock556,920 |
|
35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 30V 0.225W SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
- Resistance - RDS(On): 30 Ohm
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock36,000 |
|
30V | 30V | 50mA @ 15V | - | 4V @ 10nA | 14pF @ 15V (VGS) | 30 Ohm | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
ON Semiconductor |
JFET N-CH 1MA 100MW VTFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 240µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-VTFP
|
Package: 3-SMD, Flat Leads |
Stock6,240 |
|
- | - | 240µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 100mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-VTFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 100MW VTFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-VTFP
|
Package: 3-SMD, Flat Leads |
Stock2,640 |
|
- | - | 140µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 100mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-VTFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 240µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: 3-USFP
|
Package: SOT-1123 |
Stock4,688 |
|
- | - | 240µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 30mW | 150°C (TJ) | Surface Mount | SOT-1123 | 3-USFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: 3-USFP
|
Package: SOT-1123 |
Stock7,504 |
|
- | - | 140µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 30mW | 150°C (TJ) | Surface Mount | SOT-1123 | 3-USFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 100MW VTFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-VTFP
|
Package: 3-SMD, Flat Leads |
Stock67,428 |
|
- | - | 140µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 100mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-VTFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-USFP
|
Package: 3-SMD, Flat Leads |
Stock2,880 |
|
- | - | 210µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 30mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-USFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-USFP
|
Package: 3-SMD, Flat Leads |
Stock3,955,200 |
|
- | - | 140µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 30mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-USFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 100MW VTFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-VTFP
|
Package: 3-SMD, Flat Leads |
Stock816,000 |
|
- | - | 210µA @ 5V | 1mA | 200mV @ 1µA | 3.5pF @ 5V | - | 100mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-VTFP |
|
|
ON Semiconductor |
JFET N-CH 1MA 100MW VTFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 5V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-VTFP
|
Package: 3-SMD, Flat Leads |
Stock3,136 |
|
- | - | 140µA @ 5V | 1mA | 200mV @ 1µA | 3.5pF @ 5V | - | 100mW | - | Surface Mount | 3-SMD, Flat Leads | 3-VTFP |
|
|
ON Semiconductor |
JFET N-CH 10MA 100MW ECSP1006-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: 10mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): 200 Ohm
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: 3-ECSP1006
|
Package: 3-XFDFN |
Stock6,192 |
|
- | 30V | 1.2mA @ 10V | 10mA | 180mV @ 1µA | 4pF @ 10V | 200 Ohm | 100mW | 150°C (TJ) | Surface Mount | 3-XFDFN | 3-ECSP1006 |
|
|
ON Semiconductor |
JFET N-CH 1MA 100MW ECSP1006-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 20V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: 3-ECSP1006
|
Package: 3-XFDFN |
Stock5,728 |
|
- | 40V | 50µA @ 20V | 1mA | 1.5V @ 1µA | 1.7pF @ 10V | - | 100mW | 150°C (TJ) | Surface Mount | 3-XFDFN | 3-ECSP1006 |
|
|
ON Semiconductor |
JFET N-CH 0.1W 3VTFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-VTFP
|
Package: 3-SMD, Flat Leads |
Stock5,824 |
|
- | - | 210µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 100mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-VTFP |
|
|
ON Semiconductor |
JFET N-CH 20MA 200MW SCP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 10V
- Current Drain (Id) - Max: 20mA
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 200mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock77,952 |
|
- | 40V | 5mA @ 10V | 20mA | - | 9pF @ 10V | - | 200mW | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
|
|
ON Semiconductor |
JFET N-CH 25V 0.31W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 18 Ohm
- Power - Max: 310mW
- Operating Temperature: 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock12,780 |
|
25V | - | 10mA @ 15V | - | 500mV @ 1µA | - | 18 Ohm | 310mW | 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.31W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
- Resistance - RDS(On): 60 Ohm
- Power - Max: 310mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,056 |
|
35V | 30V | 25mA @ 20V | - | - | 10pF @ 12V (VGS) | 60 Ohm | 310mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET P-CH 40V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,952 |
|
40V | - | 4mA @ 15V | - | 1.8V @ 1µA | 7pF @ 15V | - | 350mW | -65°C ~ 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
- Resistance - RDS(On): 100 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,080 |
|
30V | 30V | 5mA @ 15V | - | 500mV @ 10nA | 10pF @ 15V (VGS) | 100 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
- Resistance - RDS(On): 100 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,480 |
|
30V | 30V | 5mA @ 15V | - | 500mV @ 10nA | 10pF @ 15V (VGS) | 100 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
- Resistance - RDS(On): 60 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,752 |
|
30V | 30V | 25mA @ 15V | - | 2V @ 10nA | 10pF @ 15V (VGS) | 60 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
- Resistance - RDS(On): 60 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,584 |
|
30V | 30V | 25mA @ 15V | - | 2V @ 10nA | 10pF @ 15V (VGS) | 60 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,568 |
|
35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,560 |
|
35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,824 |
|
35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock138,456 |
|
35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,872 |
|
35V | - | 20mA @ 15V | - | 3V @ 1µA | - | 30 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock62,016 |
|
35V | - | 20mA @ 15V | - | 3V @ 1µA | - | 30 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |