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Panasonic Electronic Components |
TRANS PREBIAS NPN 125MW SSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
|
Package: SC-89, SOT-490 |
Stock7,584 |
|
100mA | 50V | - | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 125mW | Surface Mount | SC-89, SOT-490 | SSMini3-F1 |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 125MW SSMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
|
Package: SC-89, SOT-490 |
Stock4,256 |
|
100mA | 50V | 47k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 125mW | Surface Mount | SC-89, SOT-490 | SSMini3-F1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 150MW SMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 100MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
|
Package: SC-70, SOT-323 |
Stock2,432 |
|
100mA | 50V | - | 100k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 100MHz | 150mW | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 150MW SMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
|
Package: SC-70, SOT-323 |
Stock6,992 |
|
100mA | 50V | 22k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 150mW | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 150MW SMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
|
Package: SC-70, SOT-323 |
Stock5,552 |
|
100mA | 50V | 22k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 150mW | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock6,192 |
|
500mA | 50V | 4.7k | 4.7k | 50 @ 100mA, 10V | 250mV @ 5mA, 100mA | 1µA | 200MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock3,376 |
|
500mA | 50V | 2.2k | 2.2k | 40 @ 100mA, 10V | 250mV @ 5mA, 100mA | 1µA | 200MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock7,728 |
|
100mA | 50V | 4.7k | 4.7k | 20 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock3,408 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock6,960 |
|
100mA | 50V | 47k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock3,584 |
|
100mA | 50V | 1k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock5,840 |
|
100mA | 50V | 22k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock3,568 |
|
100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock6,080 |
|
100mA | 50V | 10k | 10k | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock2,192 |
|
100mA | 50V | 47k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: NS-B1
|
Package: 3-SIP |
Stock3,344 |
|
500mA | 50V | 10k | 10k | 60 @ 100mA, 10V | 250mV @ 5mA, 100mA | 1µA | 200MHz | 300mW | Through Hole | 3-SIP | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: NS-B1
|
Package: 3-SIP |
Stock7,232 |
|
500mA | 50V | 4.7k | 4.7k | 50 @ 100mA, 10V | 250mV @ 5mA, 100mA | 1µA | 200MHz | 300mW | Through Hole | 3-SIP | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: NS-B1
|
Package: 3-SIP |
Stock5,456 |
|
500mA | 50V | 2.2k | 2.2k | 40 @ 100mA, 10V | 250mV @ 5mA, 100mA | 1µA | 200MHz | 300mW | Through Hole | 3-SIP | NS-B1 |
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|
Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock2,128 |
|
100mA | 50V | 2.2k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock4,288 |
|
100mA | 50V | 1k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock4,064 |
|
100mA | 50V | 4.7k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 300MW NS-B1
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
|
Package: NS-B1 |
Stock7,872 |
|
100mA | 50V | 10k | 10k | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 100MW SSSMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock7,728 |
|
80mA | 50V | 1k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW ML3-N2
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: ML3-N2
|
Package: SC-101, SOT-883 |
Stock3,376 |
|
80mA | 50V | 22k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 100mW | Surface Mount | SC-101, SOT-883 | ML3-N2 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock5,136 |
|
80mA | 50V | 100k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 100MW SSSMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock83,760 |
|
80mA | 50V | 2.2k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 100MW ML3-N2
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: ML3-N2
|
Package: SC-101, SOT-883 |
Stock6,352 |
|
80mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 100mW | Surface Mount | SC-101, SOT-883 | ML3-N2 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock7,680 |
|
80mA | 50V | 4.7k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |