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Renesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3740pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,576 |
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MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | - | 100nC @ 10V | 3740pF @ 10V | ±20V | - | 1.5W (Ta) | 4.8 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 600V 3A MP3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40.3W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,224 |
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MOSFET (Metal Oxide) | 600V | 3A (Ta) | 10V | - | 9nC @ 10V | 285pF @ 25V | ±30V | - | 40.3W (Tc) | 4.3 Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 26A 8HVSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 26A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock4,384 |
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MOSFET (Metal Oxide) | 30V | 26A (Tc) | 4.5V, 10V | - | 51nC @ 10V | 2490pF @ 10V | ±20V | - | 1.5W (Ta) | 3.8 mOhm @ 26A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 600V 2A TO251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,920 |
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MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | - | 6.2nC @ 10V | 165pF @ 25V | ±30V | - | 30W (Tc) | 6.8 Ohm @ 1A, 10V | 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 450V 4A MP3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40.3W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,456 |
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MOSFET (Metal Oxide) | 450V | 4A (Ta) | 10V | - | 9nC @ 10V | 280pF @ 25V | ±30V | - | 40.3W (Tc) | 2.3 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 400V 3A MP3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,296 |
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MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | - | 6nC @ 10V | 165pF @ 25V | ±30V | - | 30W (Tc) | 2.9 Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HVSON (3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,416 |
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MOSFET (Metal Oxide) | 30V | 27A (Tc) | - | - | 80nC @ 10V | 3130pF @ 10V | - | - | 1.5W (Ta), 52W (Tc) | 6.2 mOhm @ 27A, 10V | - | Surface Mount | 8-HVSON (3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 24A 8HWSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 24A, 5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,104 |
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MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | - | 74nC @ 10V | 2800pF @ 10V | ±20V | - | 1.5W (Ta) | 7.8 mOhm @ 24A, 5V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 8HVSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 24A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock265,884 |
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MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | - | 57nC @ 10V | 2600pF @ 10V | ±20V | - | 1.5W (Ta), 16.5W (Tc) | 4.6 mOhm @ 24A, 10V | 150°C (TJ) | Surface Mount | - | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 35A 2WPACK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock4,768 |
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MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 14nC @ 4.5V | 2180pF @ 10V | ±20V | - | 40W (Tc) | 5.2 mOhm @ 17.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock43,128 |
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MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | - | 80nC @ 10V | 3130pF @ 10V | ±20V | - | 1.5W (Ta) | 6.2 mOhm @ 27A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 8HVSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 16W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 22A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,704 |
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MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | - | 50nC @ 10V | 2330pF @ 10V | ±20V | - | 1.5W (Ta), 16W (Tc) | 5.3 mOhm @ 22A, 10V | 150°C (TJ) | Surface Mount | - | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 17A 8HWSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock60,000 |
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MOSFET (Metal Oxide) | 30V | 17A (Tc) | 4.5V, 10V | - | 33.4nC @ 10V | 1160pF @ 10V | +20V, -25V | - | 1.5W (Ta) | 15.5 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 400V 3A TO92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 100V
- Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.54W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock3,840 |
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MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | - | 6nC @ 100V | 165pF @ 25V | ±30V | - | 2.54W (Tc) | 2.9 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body (Formed Leads) |
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Renesas Electronics America |
MOSFET P-CH 30V 21A 8HWSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 21A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock3,328 |
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MOSFET (Metal Oxide) | 30V | 21A (Tc) | 4.5V, 10V | - | 47nC @ 10V | 1760pF @ 10V | ±20V | - | 1.5W (Ta) | 11 mOhm @ 21A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 16A 8-SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,712 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | - | 12nC @ 4.5V | 1740pF @ 10V | ±20V | - | 2W (Ta) | 7 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 12A 8-SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,680,000 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | - | 6nC @ 4.5V | 860pF @ 10V | ±20V | - | 1.8W (Ta) | 11.1 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 11A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock454,224 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | - | 45nC @ 10V | 1750pF @ 10V | ±20V | - | 1.1W (Ta) | 13 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 20V 6A 6SON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 3A, 1.8V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-WFDFN Exposed Pad
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Package: 6-WFDFN Exposed Pad |
Stock2,864 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | - | 12.5nC @ 4.5V | 1240pF @ 10V | ±8V | - | 2.5W (Ta) | 62 mOhm @ 3A, 1.8V | 150°C (TJ) | Surface Mount | 6-HUSON (2x2) | 6-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET P-CH 12V 7A 6SON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 1.8V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-WFDFN Exposed Pad
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Package: 6-WFDFN Exposed Pad |
Stock2,192 |
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MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.8V, 4.5V | - | 11.3nC @ 4.5V | 1260pF @ 10V | ±8V | - | 2.5W (Ta) | 59 mOhm @ 3.5A, 1.8V | 150°C (TJ) | Surface Mount | 6-HUSON (2x2) | 6-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 20V 7A 6SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 19.1 mOhm @ 3.5A, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-WFDFN Exposed Pad
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Package: 6-WFDFN Exposed Pad |
Stock180,000 |
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MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | - | 7.9nC @ 10V | 870pF @ 10V | ±12V | - | 2.4W (Ta) | 19.1 mOhm @ 3.5A, 2.5V | 150°C (TJ) | Surface Mount | 6-HUSON (2x2) | 6-WFDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 600V 30A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): +30V, -20V
- FET Feature: Super Junction
- Power Dissipation (Max): 34.7W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,232 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | - | 39nC @ 10V | 2300pF @ 25V | +30V, -20V | Super Junction | 34.7W (Tc) | 125 mOhm @ 15A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 600V 30A TO-3PSG
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): +30V, -20V
- FET Feature: Super Junction
- Power Dissipation (Max): 227.2W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PSG
- Package / Case: TO-3PSG
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Package: TO-3PSG |
Stock6,144 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | - | 39nC @ 10V | 2300pF @ 25V | +30V, -20V | Super Junction | 227.2W (Tc) | 125 mOhm @ 15A, 10V | 150°C (TJ) | Through Hole | TO-3PSG | TO-3PSG |
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Renesas Electronics America |
MOSFET P-CH 30V 75A 8HSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 138W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 37.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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Package: 8-SMD, Flat Lead Exposed Pad |
Stock5,232 |
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MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 2.5V @ 250µA | 141nC @ 10V | 4800pF @ 25V | ±20V | - | 1W (Ta), 138W (Tc) | 6.2 mOhm @ 37.5A, 10V | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 40V 75A 8HSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 138W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 37.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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Package: 8-SMD, Flat Lead Exposed Pad |
Stock6,800 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 116nC @ 10V | 6450pF @ 25V | ±20V | - | 1W (Ta), 138W (Tc) | 4.8 mOhm @ 37.5A, 10V | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 30V 50A 8WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK (3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock12,756 |
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MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 34nC @ 4.5V | 5600pF @ 10V | ±20V | - | 50W (Tc) | 2.9 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK (3) | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 30A 5LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock12,492 |
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MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | - | 11nC @ 4.5V | 1730pF @ 10V | ±20V | - | 15W (Tc) | 7.9 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 60V 25A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock10,008 |
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MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4.5V, 10V | - | 15nC @ 4.5V | 2030pF @ 10V | ±20V | - | 45W (Tc) | 14 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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