Page 8 - Renesas Electronics America Products - Transistors - FETs, MOSFETs - Single

2SK4150TZ-E
Renesas Electronics America

MOSFET N-CH 250V 0.4A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,568
2SK4093TZ-E
Renesas Electronics America

MOSFET N-CH 250V 1A TO-92

Package: TO-226-3, TO-92-3 Long Body

Stock2,688
2SK2225-E
Renesas Electronics America

MOSFET N-CH 1500V 2A TO-3P

Package: TO-3PFM, SC-93-3

Stock828,552
2SK1859-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,880
2SK1775-E
Renesas Electronics America

MOSFET N-CH 900V 8A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,432
2SK1342-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

Package: TO-3P-3, SC-65-3

Stock6,544
2SK1341-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

Package: TO-3P-3, SC-65-3

Stock4,832
2SK1340-E
Renesas Electronics America

MOSFET N-CH 900V 5A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,120
2SK1339-E
Renesas Electronics America

MOSFET N-CH 900V 3A TO-3P

Package: TO-3P-3, SC-65-3

Stock21,252
UPA2766T1A-E2-AY
Renesas Electronics America

MOSFET N-CH 30V 130A 8HVSON

Package: 8-PowerVDFN

Stock7,728
RJK6025DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 1A MP3A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,240
RJK6024DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 0.4A MP3A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,736
RJK2055DPA-00#J0
Renesas Electronics America

MOSFET N-CH 200V W-PAK

Package: 8-PowerWDFN

Stock4,688
RJK1055DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 23A LFPAK

Package: SC-100, SOT-669

Stock2,064
RJK1053DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

Package: SC-100, SOT-669

Stock79,608
RJK0854DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V LFPAK

Package: SC-100, SOT-669

Stock2,832
RJK0852DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 30A LFPAK

Package: SC-100, SOT-669

Stock6,564
RJK0654DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V LFPAK

Package: SC-100, SOT-669

Stock3,392
RJK0454DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 40A LFPAK

Package: SC-100, SOT-669

Stock4,448
RJK0452DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 45A LFPAK

Package: SC-100, SOT-669

Stock6,064

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SK4150TZ-E	Renesas Electronics America	MOSFET N-CH 250V 0.4A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 5.7 Ohm @ 200mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,568	MOSFET (Metal Oxide)	250V	400mA (Ta)	2.5V, 4V	-	3.7nC @ 4V	80pF @ 25V	±10V	-	750mW (Ta)	5.7 Ohm @ 200mA, 4V	150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
2SK4093TZ-E	Renesas Electronics America	MOSFET N-CH 250V 1A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock2,688	MOSFET (Metal Oxide)	250V	1A (Ta)	2.5V, 4V	-	5.5nC @ 4V	140pF @ 25V	±10V	-	900mW (Ta)	2.6 Ohm @ 500mA, 4V	150°C (TJ)	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2225-E	Renesas Electronics America	MOSFET N-CH 1500V 2A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 984.7pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 1A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	Package: TO-3PFM, SC-93-3	Stock828,552	MOSFET (Metal Oxide)	1500V	2A (Ta)	15V	-	-	984.7pF @ 30V	±20V	-	50W (Tc)	12 Ohm @ 1A, 15V	150°C (TJ)	Through Hole	TO-3PFM	TO-3PFM, SC-93-3
2SK1859-E	Renesas Electronics America	MOSFET N-CH 900V 6A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,880	MOSFET (Metal Oxide)	900V	6A (Ta)	10V	-	-	980pF @ 10V	±30V	-	60W (Tc)	3 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1775-E	Renesas Electronics America	MOSFET N-CH 900V 8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,432	MOSFET (Metal Oxide)	900V	8A (Ta)	10V	-	-	1730pF @ 10V	±30V	-	60W (Tc)	1.6 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1342-E	Renesas Electronics America	MOSFET N-CH 900V 6A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,544	MOSFET (Metal Oxide)	900V	8A (Ta)	10V	-	-	1730pF @ 10V	±30V	-	100W (Tc)	1.6 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1341-E	Renesas Electronics America	MOSFET N-CH 900V 6A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,832	MOSFET (Metal Oxide)	900V	6A (Ta)	10V	-	-	980pF @ 10V	±30V	-	100W (Tc)	3 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1340-E	Renesas Electronics America	MOSFET N-CH 900V 5A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,120	MOSFET (Metal Oxide)	900V	5A (Ta)	10V	-	-	740pF @ 10V	±30V	-	100W (Tc)	4 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1339-E	Renesas Electronics America	MOSFET N-CH 900V 3A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock21,252	MOSFET (Metal Oxide)	900V	3A (Ta)	10V	-	-	425pF @ 10V	±30V	-	80W (Tc)	7 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
UPA2766T1A-E2-AY	Renesas Electronics America	MOSFET N-CH 30V 130A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 257nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.82 mOhm @ 39A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (5.4x5.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,728	MOSFET (Metal Oxide)	30V	130A (Tc)	4.5V, 10V	-	257nC @ 10V	10850pF @ 10V	±20V	-	1.5W (Ta), 83W (Tc)	1.82 mOhm @ 39A, 4.5V	150°C (TJ)	Surface Mount	8-HVSON (5.4x5.15)	8-PowerVDFN
RJK6025DPD-00#J2	Renesas Electronics America	MOSFET N-CH 600V 1A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29.7W (Tc) Rds On (Max) @ Id, Vgs: 17.5 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,240	MOSFET (Metal Oxide)	600V	1A (Ta)	10V	5V @ 1mA	5nC @ 10V	37.5pF @ 25V	±30V	-	29.7W (Tc)	17.5 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	MP-3A	TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6024DPD-00#J2	Renesas Electronics America	MOSFET N-CH 600V 0.4A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27.2W (Tc) Rds On (Max) @ Id, Vgs: 42 Ohm @ 200mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,736	MOSFET (Metal Oxide)	600V	400mA (Ta)	10V	-	4.3nC @ 10V	37.5pF @ 25V	±30V	-	27.2W (Tc)	42 Ohm @ 200mA, 10V	150°C (TJ)	Surface Mount	MP-3A	TO-252-3, DPak (2 Leads + Tab), SC-63
RJK2055DPA-00#J0	Renesas Electronics America	MOSFET N-CH 200V W-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,688	MOSFET (Metal Oxide)	200V	20A (Ta)	10V	-	38nC @ 10V	2400pF @ 25V	±30V	-	30W (Tc)	69 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN
RJK1055DPB-00#J5	Renesas Electronics America	MOSFET N-CH 100V 23A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,064	MOSFET (Metal Oxide)	100V	23A (Ta)	10V	-	35nC @ 10V	2550pF @ 10V	±20V	-	60W (Tc)	17 mOhm @ 11.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK1053DPB-00#J5	Renesas Electronics America	MOSFET N-CH 100V 25A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock79,608	MOSFET (Metal Oxide)	100V	25A (Ta)	4.5V, 10V	-	43nC @ 4.5V	6160pF @ 10V	±20V	-	65W (Tc)	13 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0854DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,832	MOSFET (Metal Oxide)	80V	25A (Ta)	10V	-	27nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	13 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0852DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,564	MOSFET (Metal Oxide)	80V	30A (Ta)	4.5V, 10V	-	28nC @ 4.5V	4150pF @ 10V	±20V	-	55W (Tc)	12 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0654DPB-00#J5	Renesas Electronics America	MOSFET N-CH 60V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,392	MOSFET (Metal Oxide)	60V	30A (Ta)	10V	-	27nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	8.3 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0454DPB-00#J5	Renesas Electronics America	MOSFET N-CH 40V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,448	MOSFET (Metal Oxide)	40V	40A (Ta)	10V	-	25nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	4.9 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0452DPB-00#J5	Renesas Electronics America	MOSFET N-CH 40V 45A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,064	MOSFET (Metal Oxide)	40V	45A (Ta)	4.5V, 10V	-	26nC @ 4.5V	4030pF @ 10V	±20V	-	55W (Tc)	3.5 mOhm @ 22.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK03C1DPB-00#J5	Renesas Electronics America	MOSFET N-CH 30V 60A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,720	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	-	42nC @ 4.5V	6000pF @ 10V	±20V	Schottky Diode (Body)	65W (Tc)	2.2 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
NP90N06VLG-E1-AY	Renesas Electronics America	MOSFET N-CH 60V 90A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,644	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.5V @ 250µA	135nC @ 10V	6900pF @ 25V	±20V	-	1.2W (Ta), 105W (Tc)	7.8 mOhm @ 45A, 10V	175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
NP88N03KDG-E1-AY	Renesas Electronics America	MOSFET N-CH 30V 88A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 44A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,912	MOSFET (Metal Oxide)	30V	88A (Tc)	4.5V, 10V	2.5V @ 250µA	250nC @ 10V	13500pF @ 25V	±20V	-	1.8W (Ta), 200W (Tc)	2.4 mOhm @ 44A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP83P06PDG-E1-AY	Renesas Electronics America	MOSFET P-CH 60V 83A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 41.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,296	MOSFET (Metal Oxide)	60V	83A (Tc)	4.5V, 10V	2.5V @ 1mA	190nC @ 10V	10100pF @ 10V	±20V	-	1.8W (Ta), 150W (Tc)	8.8 mOhm @ 41.5A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP80N06PLG-E1B-AY	Renesas Electronics America	MOSFET N-CH 60V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,816	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	128nC @ 10V	6900pF @ 25V	±20V	-	1.8W (Ta), 115W (Tc)	8.3 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP80N04PUG-E1B-AY	Renesas Electronics America	MOSFET N-CH 40V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,296	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	135nC @ 10V	7350pF @ 25V	±20V	-	1.8W (Ta), 115W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP80N04PLG-E1B-AY	Renesas Electronics America	MOSFET N-CH 40V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,192	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	135nC @ 10V	6900pF @ 25V	±20V	-	1.8W (Ta), 115W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP75P04YLG-E1-AY	Renesas Electronics America	MOSFET P-CH 40V 75A 8HSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 37.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSON Package / Case: 8-SMD, Flat Lead Exposed Pad	Package: 8-SMD, Flat Lead Exposed Pad	Stock15,108	MOSFET (Metal Oxide)	40V	75A (Tc)	5V, 10V	2.5V @ 250µA	140nC @ 10V	4800pF @ 25V	±20V	-	1W (Ta), 138W (Tc)	9.7 mOhm @ 37.5A, 10V	175°C (TJ)	Surface Mount	8-HSON	8-SMD, Flat Lead Exposed Pad