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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,364 |
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600 V | 20A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C |
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Rohm Semiconductor |
DIODE GP 600V 12A TO220ACFP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220ACFP
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,703 |
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600 V | 12A | 2.8 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 100MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 nA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock14,343 |
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30 V | 100mA | 460 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | 300 nA @ 10 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 200V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: 150°C
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Package: - |
Stock8,415 |
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200 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 200 V | 2.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 150°C |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 30A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263L
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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100 V | 30A | 860 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263L | 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 80V 100MA UMD2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 nA @ 80 V
- Capacitance @ Vr, F: 5pF @ 500mV, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock90,708 |
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80 V | 100mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 nA @ 80 V | 5pF @ 500mV, 1MHz | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 20A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263L
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263L | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 100V 2A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 nA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock179,925 |
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100 V | 2A | 870 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 nA @ 100 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 350V 20A LPDS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 350 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 350 V
- Capacitance @ Vr, F: 412pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock921 |
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350 V | 20A | 1.35 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 350 V | 412pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 20A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252GE
- Operating Temperature - Junction: 150°C
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Package: - |
Stock7,500 |
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100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252GE | 150°C |
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Rohm Semiconductor |
DIODE SIL CARB 650V 10A TO263AB
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 600 V
- Capacitance @ Vr, F: 365pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock2,853 |
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650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Rohm Semiconductor |
DIODE GENERAL PURPOSE SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 120 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 150°C
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Package: - |
Stock12,000 |
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40 V | 3A | 470 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 40 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 200V 200MA UMD2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock16,533 |
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200 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 200 V | 2.5pF @ 0V, 1MHz | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GENERAL PURPOSE SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE SCHOTTKY 100V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 150°C
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Package: - |
Stock8,373 |
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100 V | 10A | 700 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 100MA 8SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 100MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock19,398 |
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40 V | 100mA | 690 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 15 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GENERAL PURPOSE SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C
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Package: - |
Stock8,946 |
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600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 30MA GMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 30mA
- Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 nA @ 30 V
- Capacitance @ Vr, F: 1.4pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: GMD2
- Operating Temperature - Junction: 125°C
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Package: - |
Request a Quote |
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30 V | 30mA | 370 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 500 nA @ 30 V | 1.4pF @ 1V, 1MHz | Surface Mount | 0201 (0603 Metric) | GMD2 | 125°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,901 |
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600 V | 10A | 2.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C |
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Rohm Semiconductor |
DIODE SIL CARB 650V 15A TO220ACP
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 75 µA @ 650 V
- Capacitance @ Vr, F: 750pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220ACP
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock1,176 |
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650 V | 15A | - | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,895 |
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600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 µA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
Stock40,563 |
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30 V | 200mA | 470 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 30 µA @ 10 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 350V 5A TO252
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 350 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 350 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock4,134 |
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350 V | 5A | 1.5 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 350 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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Rohm Semiconductor |
DIODE STANDARD UMT
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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