|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock7,632 |
|
100mA | 50V | 4.7k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock3,152 |
|
100mA | 50V | 4.7k | 10k | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock2,576 |
|
100mA | 50V | 4.7k | - | 100 @ 1mA, 5V | 300mV @ 250µA, 5mA | 500nA (ICBO) | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock420,000 |
|
100mA | 50V | 4.7k | 4.7k | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock4,080 |
|
30mA | 50V | 22k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock4,352 |
|
100mA | 50V | 2.2k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock5,760 |
|
100mA | 50V | 10k | 4.7k | 24 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock6,624 |
|
100mA | 50V | 10k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 500nA (ICBO) | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock6,320 |
|
50mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock2,832 |
|
500mA | 50V | 4.7k | 4.7k | 47 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock4,272 |
|
500mA | 50V | 2.2k | 2.2k | 39 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock4,000 |
|
500mA | 50V | 1k | 10k | 56 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock60,000 |
|
30mA | 50V | 47k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock7,920 |
|
100mA | 50V | 4.7k | - | 100 @ 1mA, 5V | 300mV @ 250µA, 5mA | 500nA (ICBO) | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock36,000 |
|
100mA | 50V | 4.7k | 4.7k | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 200MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,784 |
|
100mA | 50V | 4.7k | 4.7k | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock60,000 |
|
30mA | 50V | 22k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock3,024 |
|
100mA | 50V | 10k | 4.7k | 24 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock240,000 |
|
50mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
|
Package: SC-72 Formed Leads |
Stock2,160 |
|
100mA | 50V | 1k | 10k | 33 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 200MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 220
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,168 |
|
500mA | 50V | 220 | 4.7k | 47 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 200MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,440 |
|
500mA | 40V | 10k | - | 100 @ 50mA, 5V | 300mV @ 500µA, 10mA | 500nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 200MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,688 |
|
500mA | 40V | 4.7k | - | 100 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 200MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock33,600 |
|
600mA | 15V | 10k | - | 100 @ 50mA, 5V | 80mV @ 2.5mA, 50mA | 500nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 0.15W
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock7,376 |
|
100mA | 50V | 2.2k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 200MW SMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 6.8k
- Resistor - Emitter Base (R2) (Ohms): 6.8k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,200 |
|
600mA | 20V | 6.8k | 6.8k | 70 @ 50mA, 5V | 80mV @ 2.5mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 200MW SMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 220
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,464 |
|
500mA | 50V | 220 | 4.7k | 47 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 10µA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 150MW VMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 260MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
|
Package: SOT-723 |
Stock4,352 |
|
500mA | 12V | 2.2k | 10k | 140 @ 100mA, 2V | 300mV @ 5mA, 100mA | 500nA | 260MHz | 150mW | Surface Mount | SOT-723 | VMT3 |