Page 29 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RV2C010UNT2L
Rohm Semiconductor

MOSFET N-CH 20V 1A VML1006

Package: SC-101, SOT-883

Stock288,000
RUM002N05T2L
Rohm Semiconductor

MOSFET N-CH 50V 0.2A 3VMT

Package: SOT-723

Stock576,000
RE1C002ZPTL
Rohm Semiconductor

1.2V DRIVE PCH MOSFET

Package: SC-89, SOT-490

Stock216,000
RQ3E080BNTB
Rohm Semiconductor

MOSFET N-CH 30V 8A HSMT8

Package: 8-PowerVDFN

Stock6,496
RE1C001UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.1A EMT3FM

Package: SC-89, SOT-490

Stock5,632
RMW130N03TB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8PSOP

Package: 8-SMD, Flat Lead

Stock21,498
RQ1A060ZPTR
Rohm Semiconductor

MOSFET P-CH 12V 6A TSMT8

Package: 8-SMD, Flat Lead

Stock106,536
RE1E002SPTCL
Rohm Semiconductor

MOSFET P-CH 30V 0.25A EMT3

Package: SC-89, SOT-490

Stock2,176
US5U35TR
Rohm Semiconductor

MOSFET P-CH 45V 700MA TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock25,368
RU1J002YNTCL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A UMT3F

Package: SC-85

Stock5,200
RSM002N06T2L
Rohm Semiconductor

MOSFET N-CH 60V 0.25A VMT3

Package: SOT-723

Stock125,712
R6046ANZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 46A TO247

Package: TO-247-3

Stock8,700
R6035KNZC8
Rohm Semiconductor

NCH 600V 35A POWER MOSFET

Package: TO-3P-3 Full Pack

Stock9,960
SCT3080ALGC11
Rohm Semiconductor

MOSFET N-CH 650V 30A TO247

Package: TO-247-3

Stock6,256
SCT2H12NYTB
Rohm Semiconductor

1700V 1.2 OHM 4A SIC FET

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock18,552
RSH070P05GZETB
Rohm Semiconductor

MOSFET P-CH 45V 7A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
RQ3G150GNTB
Rohm Semiconductor

NCH 40V 30A POWER MOSFET

Package: 8-PowerVDFN

Stock26,700
RS3E075ATTB
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock21,624
RQ7E055ATTCR
Rohm Semiconductor

PCH -30V -5.5A MIDDLE POWER MOSF

Package: 8-SMD, Flat Lead

Stock23,358
RQ5E070BNTCL
Rohm Semiconductor

NCH 30V 7A MIDDLE POWER MOSFET

Package: SC-96

Stock22,746

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RV2C010UNT2L	Rohm Semiconductor	MOSFET N-CH 20V 1A VML1006 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML1006 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock288,000	MOSFET (Metal Oxide)	20V	1A (Ta)	1.2V, 4.5V	1V @ 1mA	-	40pF @ 10V	±8V	-	400mW (Ta)	470 mOhm @ 500mA, 4.5V	150°C (TJ)	Surface Mount	VML1006	SC-101, SOT-883
RUM002N05T2L	Rohm Semiconductor	MOSFET N-CH 50V 0.2A 3VMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock576,000	MOSFET (Metal Oxide)	50V	200mA (Ta)	1.2V, 4.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
RE1C002ZPTL	Rohm Semiconductor	1.2V DRIVE PCH MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock216,000	MOSFET (Metal Oxide)	20V	200mA (Ta)	4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	±10V	-	150W (Tc)	1.2 Ohm @ 200mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
RQ3E080BNTB	Rohm Semiconductor	MOSFET N-CH 30V 8A HSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,496	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	2.5V @ 1mA	14.5nC @ 10V	660pF @ 15V	±20V	-	2W (Ta)	15.2 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RE1C001UNTCL	Rohm Semiconductor	MOSFET N-CH 20V 0.1A EMT3FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock5,632	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	7.1pF @ 10V	±8V	-	150mW (Ta)	3.5 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
RMW130N03TB	Rohm Semiconductor	MOSFET N-CH 30V 13A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock21,498	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 1mA	12nC @ 10V	650pF @ 15V	±20V	-	3W (Ta)	12.6 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-PSOP	8-SMD, Flat Lead
RQ1A060ZPTR	Rohm Semiconductor	MOSFET P-CH 12V 6A TSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock106,536	MOSFET (Metal Oxide)	12V	6A (Ta)	1.5V, 4.5V	1V @ 1mA	34nC @ 4.5V	2800pF @ 6V	±10V	-	700mW (Ta)	23 mOhm @ 6A, 4.5V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RE1E002SPTCL	Rohm Semiconductor	MOSFET P-CH 30V 0.25A EMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock2,176	MOSFET (Metal Oxide)	30V	250mA (Ta)	4V, 10V	2.5V @ 1mA	-	30pF @ 10V	±20V	-	150mW (Ta)	1.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
US5U35TR	Rohm Semiconductor	MOSFET P-CH 45V 700MA TUMT5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 700mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock25,368	MOSFET (Metal Oxide)	45V	700mA (Ta)	4V, 10V	2.5V @ 1mA	1.7nC @ 5V	120pF @ 10V	±20V	Schottky Diode (Isolated)	1W (Ta)	800 mOhm @ 700mA, 10V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
RU1J002YNTCL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A UMT3F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock5,200	MOSFET (Metal Oxide)	50V	200mA (Ta)	0.9V, 4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	UMT3F	SC-85
RSM002N06T2L	Rohm Semiconductor	MOSFET N-CH 60V 0.25A VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock125,712	MOSFET (Metal Oxide)	60V	250mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15pF @ 25V	±20V	-	150mW (Ta)	2.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	VMT3	SOT-723
R6046ANZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,700	MOSFET (Metal Oxide)	600V	46A (Tc)	10V	4.5V @ 1mA	150nC @ 10V	6000pF @ 25V	±30V	-	120W (Tc)	90 mOhm @ 23A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
R6035KNZC8	Rohm Semiconductor	NCH 600V 35A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,960	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 1mA	72nC @ 10V	3000pF @ 25V	±20V	-	102W (Tc)	102 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
SCT3080ALGC11	Rohm Semiconductor	MOSFET N-CH 650V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock6,256	MOSFET (Metal Oxide)	650V	30A (Tc)	18V	5.6V @ 5mA	48nC @ 18V	571pF @ 500V	+22V, -4V	-	134W (Tc)	104 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT2H12NYTB	Rohm Semiconductor	1700V 1.2 OHM 4A SIC FET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock18,552	MOSFET (Metal Oxide)	1700V	4A (Tc)	18V	4V @ 410µA	14nC @ 18V	184pF @ 800V	+22V, -6V	-	44W (Tc)	1.5 Ohm @ 1.1A, 18V	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RSH070P05GZETB	Rohm Semiconductor	MOSFET P-CH 45V 7A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	45V	7A (Ta)	4V, 10V	2.5V @ 1mA	47.6nC @ 5V	4100pF @ 10V	±20V	-	2W (Ta)	27 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ3G150GNTB	Rohm Semiconductor	NCH 40V 30A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock26,700	MOSFET (Metal Oxide)	40V	39A (Tc)	10V	2.5V @ 1mA	11.6nC @ 4.5V	1450pF @ 20V	±20V	-	20W (Tc)	7.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RS3E075ATTB	Rohm Semiconductor	MOSFET P-CH 30V 7.5A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock21,624	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	2.5V @ 1mA	25nC @ 10V	1250pF @ 15V	±20V	-	2W (Ta)	23.5 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ7E055ATTCR	Rohm Semiconductor	PCH -30V -5.5A MIDDLE POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock23,358	MOSFET (Metal Oxide)	30V	5.5A (Tc)	10V	2.5V @ 1mA	18.8nC @ 10V	860pF @ 15V	±20V	-	1.5W (Tc)	24.5 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RQ5E070BNTCL	Rohm Semiconductor	NCH 30V 7A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 16.1 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock22,746	MOSFET (Metal Oxide)	30V	7A (Tc)	10V	2.5V @ 1mA	23nC @ 10V	950pF @ 15V	±20V	-	1W (Tc)	16.1 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT3	SC-96
RF6C055BCTCR	Rohm Semiconductor	PCH -20V -5.5A MIDDLE POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25.8 mOhm @ 5.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock26,178	MOSFET (Metal Oxide)	20V	5.5A (Ta)	4.5V	1.2V @ 1mA	15.2nC @ 4.5V	1080pF @ 10V	±8V	-	1W (Tc)	25.8 mOhm @ 5.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
RQ6C065BCTCR	Rohm Semiconductor	PCH -20V -6.5A MIDDLE POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SC-95-6	Package: SC-95-6	Stock24,738	MOSFET (Metal Oxide)	20V	6.5A (Tc)	4.5V	1.2V @ 1mA	22nC @ 4.5V	1520pF @ 10V	±8V	-	1.25W (Tc)	21 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SC-95-6
RQ5E030AJTCL	Rohm Semiconductor	NCH 30V 3A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock36,360	MOSFET (Metal Oxide)	30V	3A (Ta)	4.5V	1.5V @ 1mA	2.1nC @ 4.5V	240pF @ 15V	±12V	-	1W (Tc)	75 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ5E025ATTCL	Rohm Semiconductor	PCH -30V -2.5A MIDDLE POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 91 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock72,360	MOSFET (Metal Oxide)	30V	2.5A (Ta)	10V	2.5V @ 1mA	2.7nC @ 4.5V	220pF @ 15V	±20V	-	1W (Tc)	91 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
R6046FNZC8	Rohm Semiconductor	MOSFET N-CH 600V 46A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,120	MOSFET (Metal Oxide)	600V	46A (Ta)	10V	5V @ 1mA	150nC @ 10V	6100pF @ 25V	±30V	-	120W (Tc)	93 mOhm @ 23A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-220-3 Full Pack
R6046FNZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,144	MOSFET (Metal Oxide)	600V	46A (Tc)	10V	5V @ 1mA	150nC @ 10V	6230pF @ 25V	±30V	-	120W (Tc)	98 mOhm @ 23A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
R6047ENZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 47A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 25.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,432	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 1mA	145nC @ 10V	3850pF @ 25V	±20V	-	120W (Tc)	72 mOhm @ 25.8A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
R6020FNX	Rohm Semiconductor	MOSFET N-CH 600V 20A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock13,860	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 1mA	65nC @ 10V	2040pF @ 25V	±30V	-	50W (Tc)	250 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack