Page 3 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RRR040P03HZGTL
Rohm Semiconductor

MOSFET P-CH 30V 4A TSMT3

Package: -

Stock26,646
R6014YND3TL1
Rohm Semiconductor

NCH 600V 14A, TO-252, POWER MOSF

Package: -

Stock7,428
R6006JND3TL1
Rohm Semiconductor

MOSFET N-CH 600V 6A TO252

Package: -

Stock36
RS3E130ATTB1
Rohm Semiconductor

PCH -30V -13A POWER MOSFET : RS3

Package: -

Stock14,466
RCJ331N25TL
Rohm Semiconductor

250V 33A, NCH, TO-263S, POWER MO

Package: -

Stock5,970
R6011END3TL1
Rohm Semiconductor

MOSFET N-CH 600V 11A TO252

Package: -

Stock1,113
BSM180C12P3C202
Rohm Semiconductor

SICFET N-CH 1200V 180A MODULE

Package: -

Stock30
RQ3P300BHTB1
Rohm Semiconductor

NCH 100V 39A, HSMT8, POWER MOSFE

Package: -

Stock43,107
RQ3E180BNTB1
Rohm Semiconductor

NCH 30V 39A MIDDLE POWER MOSFET:

Package: -

Stock8,460
R6524ENZC17
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

Package: -

Stock900
RD3G03BBGTL1
Rohm Semiconductor

NCH 40V 65A, TO-252, POWER MOSFE

Package: -

Stock7,272
RJ1P10BBHTL1
Rohm Semiconductor

NCH 100V 105A, TO-263AB, POWER M

Package: -

Request a Quote
SCT3040KW7TL
Rohm Semiconductor

SICFET N-CH 1200V 56A TO263-7

Package: -

Stock2,994
SCT3060ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 39A TO247N

Package: -

Request a Quote
RRS075P03Z00TB1
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOP

Package: -

Request a Quote
RD3L08BGNTL
Rohm Semiconductor

MOSFET N-CH 60V 80A TO252

Package: -

Stock4,239
RD3T050CNTL1
Rohm Semiconductor

MOSFET N-CH 200V 5A TO252

Package: -

Stock6,042
BSS138BKT116
Rohm Semiconductor

NCH 60V 400MA SMALL SIGNAL MOSFE

Package: -

Stock57,210
SCT3060AW7TL
Rohm Semiconductor

SICFET N-CH 650V 38A TO263-7

Package: -

Stock3,567
RRS090P03HZGTB
Rohm Semiconductor

AUTOMOTIVE PCH -30V -9A POWER MO

Package: -

Stock6,183

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RRR040P03HZGTL	Rohm Semiconductor	MOSFET P-CH 30V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock26,646	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	2.5V @ 1mA	10.5 nC @ 5 V	1000 pF @ 10 V	±20V	-	700mW (Ta)	45mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
R6014YND3TL1	Rohm Semiconductor	NCH 600V 14A, TO-252, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 6V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,428	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V, 12V	6V @ 1.4mA	20 nC @ 10 V	890 pF @ 100 V	±30V	-	132W (Tc)	260mOhm @ 5A, 12V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6006JND3TL1	Rohm Semiconductor	MOSFET N-CH 600V 6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock36	MOSFET (Metal Oxide)	600 V	6A (Tc)	15V	7V @ 800µA	15.5 nC @ 15 V	410 pF @ 100 V	±30V	-	86W (Tc)	936mOhm @ 3A, 15V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RS3E130ATTB1	Rohm Semiconductor	PCH -30V -13A POWER MOSFET : RS3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock14,466	MOSFET (Metal Oxide)	30 V	13A (Ta)	4.5V, 10V	2.5V @ 2mA	83 nC @ 10 V	3730 pF @ 15 V	±20V	-	1.4W (Ta)	8.5mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RCJ331N25TL	Rohm Semiconductor	250V 33A, NCH, TO-263S, POWER MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 211W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263S Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,970	MOSFET (Metal Oxide)	250 V	33A (Tc)	10V	5V @ 1mA	80 nC @ 10 V	4500 pF @ 25 V	±30V	-	1.56W (Ta), 211W (Tc)	105mOhm @ 16.5A, 10V	150°C (TJ)	Surface Mount	TO-263S	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6011END3TL1	Rohm Semiconductor	MOSFET N-CH 600V 11A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock1,113	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	4V @ 1mA	32 nC @ 10 V	670 pF @ 25 V	±20V	-	124W (Tc)	390mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSM180C12P3C202	Rohm Semiconductor	SICFET N-CH 1200V 180A MODULE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 10 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 880W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: Module	Package: -	Stock30	SiCFET (Silicon Carbide)	1200 V	180A (Tc)	-	5.6V @ 50mA	-	9000 pF @ 10 V	+22V, -4V	-	880W (Tc)	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
RQ3P300BHTB1	Rohm Semiconductor	NCH 100V 39A, HSMT8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: -	Stock43,107	MOSFET (Metal Oxide)	100 V	39A (Tc)	6V, 10V	4V @ 1mA	36 nC @ 10 V	2040 pF @ 50 V	±20V	-	32W (Tc)	15.5mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RQ3E180BNTB1	Rohm Semiconductor	NCH 30V 39A MIDDLE POWER MOSFET: FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: -	Stock8,460	MOSFET (Metal Oxide)	30 V	18A (Ta), 39A (Tc)	4.5V, 10V	2.5V @ 1mA	72 nC @ 10 V	3500 pF @ 15 V	±20V	-	2W (Ta), 20W (Tc)	3.9mOhm @ 18A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
R6524ENZC17	Rohm Semiconductor	MOSFET N-CH 650V 24A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 750µA	70 nC @ 10 V	1650 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
RD3G03BBGTL1	Rohm Semiconductor	NCH 40V 65A, TO-252, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,272	MOSFET (Metal Oxide)	40 V	35A (Tc)	4.5V, 10V	2.5V @ 1mA	18.2 nC @ 10 V	1170 pF @ 20 V	±20V	-	50W (Tc)	6.5mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJ1P10BBHTL1	Rohm Semiconductor	NCH 100V 105A, TO-263AB, POWER M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 189W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	105A (Tc)	6V, 10V	4V @ 1mA	135 nC @ 10 V	8600 pF @ 50 V	±20V	-	189W (Tc)	3mOhm @ 90A, 10V	150°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3040KW7TL	Rohm Semiconductor	SICFET N-CH 1200V 56A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 267W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,994	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	-	5.6V @ 10mA	107 nC @ 18 V	1337 pF @ 800 V	+22V, -4V	-	267W	52mOhm @ 20A, 18V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT3060ALHRC11	Rohm Semiconductor	SICFET N-CH 650V 39A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 165W Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	5.6V @ 6.67mA	58 nC @ 18 V	852 pF @ 500 V	+22V, -4V	-	165W	78mOhm @ 13A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RRS075P03Z00TB1	Rohm Semiconductor	MOSFET P-CH 30V 7.5A 8SOP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD3L08BGNTL	Rohm Semiconductor	MOSFET N-CH 60V 80A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,239	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	2.5V @ 100µA	71 nC @ 10 V	3620 pF @ 30 V	±20V	-	119W (Tc)	5.5mOhm @ 80A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RD3T050CNTL1	Rohm Semiconductor	MOSFET N-CH 200V 5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,042	MOSFET (Metal Oxide)	200 V	5A (Tc)	10V	5.25V @ 1mA	8.3 nC @ 10 V	330 pF @ 25 V	±30V	-	29W (Tc)	760mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS138BKT116	Rohm Semiconductor	NCH 60V 400MA SMALL SIGNAL MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock57,210	MOSFET (Metal Oxide)	60 V	400mA (Ta)	2.5V, 10V	2V @ 10µA	-	47 pF @ 30 V	±20V	-	200mW (Ta)	680mOhm @ 400mA, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SCT3060AW7TL	Rohm Semiconductor	SICFET N-CH 650V 38A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 159W Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock3,567	SiCFET (Silicon Carbide)	650 V	38A (Tc)	-	5.6V @ 6.67mA	58 nC @ 18 V	852 pF @ 500 V	+22V, -4V	-	159W	78mOhm @ 13A, 18V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RRS090P03HZGTB	Rohm Semiconductor	AUTOMOTIVE PCH -30V -9A POWER MO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,183	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	2.5V @ 1mA	30 nC @ 5 V	3000 pF @ 10 V	±20V	-	2W (Ta)	15.4mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ6E030SPTR	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock4,011	MOSFET (Metal Oxide)	30 V	3A (Ta)	4V, 10V	2.5V @ 1mA	6 nC @ 5 V	440 pF @ 10 V	±20V	-	950mW (Ta)	80mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RD3H080SPTL1	Rohm Semiconductor	MOSFET P-CH 45V 8A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	45 V	8A (Ta)	4V, 10V	3V @ 1mA	9 nC @ 5 V	1000 pF @ 10 V	±20V	-	15W (Tc)	91mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RD3P050SNFRATL	Rohm Semiconductor	MOSFET N-CH 100V 5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,069	MOSFET (Metal Oxide)	100 V	5A (Ta)	4V, 10V	2.5V @ 1mA	14 nC @ 10 V	530 pF @ 25 V	±20V	-	15W (Tc)	190mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RS1E260ATTB1	Rohm Semiconductor	MOSFET P-CH 30V 26A/80A 8HSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 26A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock45,066	MOSFET (Metal Oxide)	30 V	26A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 1mA	175 nC @ 10 V	7850 pF @ 15 V	±20V	-	3W (Ta)	3.1mOhm @ 26A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
R6077VNZ4C13	Rohm Semiconductor	600V 77A TO-247, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 781W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock3,570	MOSFET (Metal Oxide)	600 V	77A (Tc)	10V, 15V	6.5V @ 1.9mA	108 nC @ 10 V	5200 pF @ 100 V	±30V	-	781W (Tc)	51mOhm @ 23A, 15V	150°C (TJ)	Through Hole	TO-247	TO-247-3
RSS095N05HZGTB	Rohm Semiconductor	NCH 45V 9.5A POWER MOSFET: RSS09 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,750	MOSFET (Metal Oxide)	45 V	9.5A (Ta)	4V, 10V	2.5V @ 1mA	26.5 nC @ 5 V	1830 pF @ 10 V	±20V	-	1.4W (Ta)	16mOhm @ 9.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RD3L01BATTL1	Rohm Semiconductor	PCH -60V -10A POWER MOSFET - RD3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,239	MOSFET (Metal Oxide)	60 V	10A (Ta)	4.5V, 10V	2.5V @ 1mA	15.2 nC @ 10 V	1200 pF @ 30 V	±20V	-	26W (Ta)	84mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RSS090N03FRATB	Rohm Semiconductor	MOSFET N-CH 30V 9A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	2.5V @ 1mA	15 nC @ 5 V	810 pF @ 10 V	±20V	-	1.4W (Ta)	16mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)