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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,312 |
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Rohm Semiconductor |
TRANS PNP 32V 2A ATV
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock5,680 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 150MW EMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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Package: SC-75, SOT-416 |
Stock28,932 |
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Rohm Semiconductor |
DIODE ZENER 36V 1W PMDU
- Voltage - Zener (Nom) (Vz): 36V
- Tolerance: -
- Power - Max: 1W
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 10µA @ 27V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
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Package: SOD-123F |
Stock6,736 |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 20A TO220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 400µA @ 600V
- Capacitance @ Vr, F: 860pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock16,200 |
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Rohm Semiconductor |
IC DETECTOR VOLT 1.7V CMOS 4SOP
- Type: Simple Reset/Power-On Reset
- Number of Voltages Monitored: 1
- Output: Push-Pull, Totem Pole
- Reset: Active Low
- Reset Timeout: Adjustable/Selectable
- Voltage - Threshold: 1.7V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SC-82
- Supplier Device Package: 4-SOP
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Package: SC-82 |
Stock5,392 |
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Rohm Semiconductor |
IC DETECTOR VOLT 3.0V CMOS SSOP3
- Type: Simple Reset/Power-On Reset
- Number of Voltages Monitored: 1
- Output: Push-Pull, Totem Pole
- Reset: Active Low
- Reset Timeout: -
- Voltage - Threshold: 3V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-SSOP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,120 |
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Rohm Semiconductor |
PHOTOINTERRUPTER ULTRAMINI
- Sensing Distance: 1.6mm
- Sensing Method: Transmissive
- Output Configuration: Phototransistor
- Current - DC Forward (If) (Max): 35mA
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Response Time: 10µs
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: Module, Slotted
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Package: Module, Slotted |
Stock7,956 |
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Rohm Semiconductor |
RES SMD 35.7 OHM 1% 1/4W 1206
- Resistance: 35.7 Ohms
- Tolerance: ±1%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: Automotive AEC-Q200
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock8,496 |
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Rohm Semiconductor |
RES SMD 57.6 OHM 1% 1/4W 1206
- Resistance: 57.6 Ohms
- Tolerance: ±1%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock2,286 |
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Rohm Semiconductor |
RES SMD 1.37M OHM 1% 1/4W 1206
- Resistance: 1.37 MOhms
- Tolerance: ±1%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock3,204 |
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Rohm Semiconductor |
RES SMD 52.3 OHM 1% 1/8W 0805
- Resistance: 52.3 Ohms
- Tolerance: ±1%
- Power (Watts): 0.125W, 1/8W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0805 (2012 Metric) |
Stock2,466 |
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Rohm Semiconductor |
RES SMD 3 OHM 5% 1/3W 1210
- Resistance: 3 Ohms
- Tolerance: ±5%
- Power (Watts): 0.333W, 1/3W
- Composition: Thick Film
- Features: Automotive AEC-Q200, High Voltage
- Temperature Coefficient: ±200ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1210 (3225 Metric)
- Supplier Device Package: 1210
- Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1210 (3225 Metric) |
Stock7,668 |
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Rohm Semiconductor |
RES SMD 147 OHM 1% 0.4W 0805
- Resistance: 147 Ohms
- Tolerance: ±1%
- Power (Watts): 0.4W
- Composition: Thick Film
- Features: Automotive AEC-Q200, Pulse Withstanding
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0805 (2012 Metric) |
Stock5,724 |
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Rohm Semiconductor |
RES SMD 68K OHM 1% 1/10W 0603
- Resistance: 68 kOhms
- Tolerance: ±1%
- Power (Watts): 0.1W, 1/10W
- Composition: Thick Film
- Features: Anti-Sulfur
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: 0603
- Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
- Height - Seated (Max): 0.022" (0.55mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0603 (1608 Metric) |
Stock2,988 |
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Rohm Semiconductor |
RES SMD 30 OHM 1% 1/4W 1206
- Resistance: 30 Ohms
- Tolerance: ±1%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock53,622 |
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Rohm Semiconductor |
RES SMD 16 OHM 1% 1/3W 1210
- Resistance: 16 Ohms
- Tolerance: ±1%
- Power (Watts): 0.333W, 1/3W
- Composition: Thick Film
- Features: Automotive AEC-Q200, High Voltage
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1210 (3225 Metric)
- Supplier Device Package: 1210
- Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1210 (3225 Metric) |
Stock5,292 |
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Rohm Semiconductor |
RES SMD 3.01M OHM 1% 1/4W 1206
- Resistance: 3.01 MOhms
- Tolerance: ±1%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: Automotive AEC-Q200, High Voltage
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1206 (3216 Metric) |
Stock52,074 |
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Rohm Semiconductor |
RES SMD 73.2K OHM 1% 1/4W 1210
- Resistance: 73.2 kOhms
- Tolerance: ±1%
- Power (Watts): 0.25W, 1/4W
- Composition: Thick Film
- Features: Automotive AEC-Q200
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 1210 (3225 Metric)
- Supplier Device Package: 1210
- Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
- Height - Seated (Max): 0.028" (0.70mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 1210 (3225 Metric) |
Stock33,306 |
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Rohm Semiconductor |
RES SMD 0.22 OHM 1% 1W 2512
- Resistance: 220 mOhms
- Tolerance: ±1%
- Power (Watts): 1W
- Composition: Thick Film
- Features: Automotive AEC-Q200
- Temperature Coefficient: ±250ppm/°C
- Operating Temperature: -55°C ~ 125°C
- Package / Case: 2512 (6432 Metric)
- Supplier Device Package: 2512
- Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
- Height - Seated (Max): 0.028" (0.70mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 2512 (6432 Metric) |
Stock95,004 |
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Rohm Semiconductor |
RES SMD 9.1K OHM 1% 1/10W 0603
- Resistance: 9.1 kOhms
- Tolerance: ±1%
- Power (Watts): 0.1W, 1/10W
- Composition: Thick Film
- Features: -
- Temperature Coefficient: ±100ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: 0603
- Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
- Height - Seated (Max): 0.022" (0.55mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0603 (1608 Metric) |
Stock144,810 |
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Rohm Semiconductor |
RES SMD 27 OHM 5% 0.4W 0805
- Resistance: 27 Ohms
- Tolerance: ±5%
- Power (Watts): 0.4W
- Composition: Thick Film
- Features: Automotive AEC-Q200, Pulse Withstanding
- Temperature Coefficient: ±200ppm/°C
- Operating Temperature: -55°C ~ 155°C
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
- Height - Seated (Max): 0.026" (0.65mm)
- Number of Terminations: 2
- Failure Rate: -
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Package: 0805 (2012 Metric) |
Stock145,140 |
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Rohm Semiconductor |
SPI BUS EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock5,584 |
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Rohm Semiconductor |
IC EEPROM 1K MICRO BUS SOP-J8
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (64 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,712 |
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Rohm Semiconductor |
DIODE SIL CARB 650V 12A TO220ACP
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 600pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220ACP
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock129 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Rohm Semiconductor |
IC EEPROM 64KBIT SPI 5MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kbit
- Memory Interface: SPI
- Clock Frequency: 5 MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock744 |
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Rohm Semiconductor |
DIODE GEN PURP 600V 1A PMDT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDT
- Operating Temperature - Junction: 150°C
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Package: - |
Stock8,076 |
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