|
|
STMicroelectronics |
DIODE SIL CARBIDE 650V 12A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 150 µA @ 650 V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock2,304 |
|
650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SIL CARB 650V 10A PWRFLAT
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 595pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat™ (8x8) HV
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 595pF @ 0V, 1MHz | Surface Mount | 8-PowerVDFN | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SIL CARBIDE 650V 2A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: 135pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock7,419 |
|
650 V | 2A | 1.55 V @ 2 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 135pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SIL CARBIDE 650V 10A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 480pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock5,334 |
|
650 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 170V 2A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 170 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.8 µA @ 170 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 175°C
|
Package: - |
Request a Quote |
|
170 V | 2A | 820 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.8 µA @ 170 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 175°C |
|
|
STMicroelectronics |
DIODE SIL CARB 650V 10A TO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 130 µA @ 650 V
- Capacitance @ Vr, F: 670pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247 Long Leads | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 200V 4A SMBFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBflat Notch
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock9,951 |
|
200 V | 4A | 870 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 200 V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBflat Notch | -40°C ~ 175°C |
|
|
STMicroelectronics |
AUTOMOTIVE 100 V, 15 A, DPAK POW
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 740 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 28 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock4,413 |
|
100 V | 15A | 740 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 28 µA @ 100 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) | -40°C ~ 175°C |
|
|
STMicroelectronics |
AUTOMOTIVE 100 V, 3 A POWER SCHO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 755 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5.7 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD128Flat
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock18,000 |
|
100 V | 3A | 755 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5.7 µA @ 100 V | - | Surface Mount | SOD-128 | SOD128Flat | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
|
Package: - |
Stock1,302 |
|
600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A DO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: 175°C (Max)
|
Package: - |
Stock2,541 |
|
600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK HV
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock6,600 |
|
600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
|
|
STMicroelectronics |
AUTOMOTIVE 100 V, 5 A POWER SCHO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD128Flat
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock16,503 |
|
100 V | 5A | 680 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 11.5 µA @ 100 V | - | Surface Mount | SOD-128 | SOD128Flat | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 60V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock45,309 |
|
60 V | 10A | 790 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A DO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock24 |
|
600 V | 15A | 2.95 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 600 V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock2,991 |
|
600 V | 15A | 2.95 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
STMicroelectronics |
100 V, 12 A POWER SCHOTTKY TRENC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 24 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 175°C
|
Package: - |
Stock17,718 |
|
100 V | 12A | 710 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 24 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 40V 1A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 175°C
|
Package: - |
Request a Quote |
|
40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35 µA @ 40 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 40V 1A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 150°C
|
Package: - |
Request a Quote |
|
40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12 µA @ 40 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C (Max)
|
Package: - |
Stock7,650 |
|
600 V | 15A | 2.95 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 1A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 175°C
|
Package: - |
Request a Quote |
|
100 V | 1A | 770 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4 µA @ 100 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 175°C |
|
|
STMicroelectronics |
DIODE SIL CARBIDE 650V 12A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 150 µA @ 650 V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
STMicroelectronics |
AUTOMOTIVE 100 V, 5 A POWER SCHO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock17,892 |
|
100 V | 5A | 680 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 11.5 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
|
|
STMicroelectronics |
100 V, 5 A POWER SCHOTTKY TRENCH
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD128Flat
- Operating Temperature - Junction: 175°C
|
Package: - |
Stock26,280 |
|
100 V | 5A | 680 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 11.5 µA @ 100 V | - | Surface Mount | SOD-128 | SOD128Flat | 175°C |
|
|
STMicroelectronics |
100 V, 5 A POWER SCHOTTKY TRENCH
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMB, Flat Lead
- Supplier Device Package: SMBflat-3L
- Operating Temperature - Junction: 175°C
|
Package: - |
Stock13,569 |
|
100 V | 5A | 680 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 11.5 µA @ 100 V | - | Surface Mount | 3-SMB, Flat Lead | SMBflat-3L | 175°C |
|
|
STMicroelectronics |
100 V, 5 A POWER SCHOTTKY TRENCH
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 175°C
|
Package: - |
Stock16,500 |
|
100 V | 5A | 680 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 11.5 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 150V 2A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 175°C
|
Package: - |
Stock507 |
|
150 V | 2A | 820 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 µA @ 150 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 175°C |
|
|
STMicroelectronics |
DIODE SIL CARB 650V 16A TO247-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 140 µA @ 650 V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock360 |
|
650 V | 16A | 1.75 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 750pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |