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STMicroelectronics |
DIODE SIL CARB 650V 12A D2PAK HV
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 150 µA @ 650 V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK HV
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock2,907 |
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650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 150V 3A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
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150 V | 3A | 820 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 µA @ 150 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 175°C |
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STMicroelectronics |
DISCRETE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FPAC
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
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400 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 1 µA @ 400 V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock51,870 |
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60 V | 10A | 650 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SIL CARB 1.2KV 15A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 90 µA @ 1200 V
- Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK HV
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock2,979 |
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1200 V | 15A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 1200 V | 1200pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock29,814 |
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600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 470 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock21,429 |
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60 V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 470 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 150°C (Max) |
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STMicroelectronics |
100 V, 1 A POWER SCHOTTKY TRENCH
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 725 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.7 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD128Flat
- Operating Temperature - Junction: 175°C
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Package: - |
Stock23,520 |
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100 V | 1A | 725 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.7 µA @ 100 V | - | Surface Mount | SOD-128 | SOD128Flat | 175°C |
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STMicroelectronics |
100 V, 1 A POWER SCHOTTKY TRENCH
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 725 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.7 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: 175°C
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Package: - |
Stock38,514 |
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100 V | 1A | 725 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.7 µA @ 100 V | - | Surface Mount | SOD-123F | SOD-123F | 175°C |
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STMicroelectronics |
DIODE SIL CARBIDE 1.2KV 5A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12 µA @ 1200 V
- Capacitance @ Vr, F: 190pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock92,766 |
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1200 V | 5A | 1.5 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12 µA @ 1200 V | 190pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SIL CARBIDE 650V 10A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 480pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock21,375 |
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650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 45V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock17,055 |
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45 V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 175°C (Max) |
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STMicroelectronics |
1200 V, 20 A HIGH SURGE SILICON
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock600 |
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- | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
DIODE SCHOTTKY 60V 3A SMBFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBflat Notch
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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60 V | 3A | 620 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 60 V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBflat Notch | 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 6A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock62,961 |
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100 V | 6A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 35 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 80V 10A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15 µA @ 80 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Request a Quote |
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80 V | 10A | 880 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15 µA @ 80 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 40V 3A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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40 V | 3A | 630 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 40 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 150°C |
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STMicroelectronics |
DIODE SIL CARBIDE 650V 8A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Capacitance @ Vr, F: 414pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock12,702 |
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650 V | 8A | - | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 414pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SIL CARB 1.2KV 20A DO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
- Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock1,470 |
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1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock11,988 |
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100 V | 5A | 820 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GP 600V 1A SOD128FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD128Flat
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock73,479 |
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600 V | 1A | 1.9 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 1 µA @ 600 V | - | Surface Mount | SOD-128 | SOD128Flat | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SIL CARB 1.2KV 10A DPAK HV
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
- Capacitance @ Vr, F: 725pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK HV
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock14,964 |
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1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 725pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK HV | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SIL CARB 1.2KV 20A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
- Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK HV
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock3,000 |
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1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 25V 2A SMAFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 90 µA @ 25 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAflat Notch
- Operating Temperature - Junction: 150°C
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Package: - |
Stock90 |
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25 V | 2A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90 µA @ 25 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAflat Notch | 150°C |
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STMicroelectronics |
DIODE GP 600V 25A TO220FPAC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 25 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FPAC
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock3,990 |
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600 V | 25A | 3.4 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 60 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE SIL CARB 1.2KV 15A DO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 90 µA @ 1200 V
- Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock1,860 |
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1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 1200 V | 1200pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 40V 3A SMBFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBflat Notch
- Operating Temperature - Junction: 150°C
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Package: - |
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40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBflat Notch | 150°C |
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STMicroelectronics |
DIODE SIL CARBIDE 650V 12A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock3,318 |
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650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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