STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerFlat™ (5x6)
• Package / Case: 8-PowerVDFN

MOSFET N-CH 600V 13A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

MOSFET N-CH 600V 34A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 4.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
• Vgs (Max): +22V, -10V
• FET Feature: -
• Power Dissipation (Max): 547W
• Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

MOSFET N-CH 600V 25A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SICFET N-CH 1200V 12A HIP247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: HiP247™
• Package / Case: TO-247-3

TO247-4

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
• Vgs(th) (Max) @ Id: 4.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
• Vgs (Max): +18V, -5V
• FET Feature: -
• Power Dissipation (Max): 236W (Tc)
• Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

TO247-4

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
• Vgs(th) (Max) @ Id: 4.2V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
• Vgs (Max): +18V, -5V
• FET Feature: -
• Power Dissipation (Max): 388W (Tc)
• Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

MOSFET N-CH 600V 5.5A PWRFLAT HV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 660mOhm @ 2.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerFlat™ (5x6) HV
• Package / Case: 8-PowerVDFN

MOSFET N-CH 600V 52A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 Long Leads
• Package / Case: TO-247-3

N-CHANNEL 650 V, 132 MOHM TYP.,

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 106W (Tc)
• Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

MOSFET N-CH 100V 80A H2PAK-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: H2PAK-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SICFET N-CH 650V 90A H2PAK-7

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
• Vgs (Max): +22V, -10V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: H2PAK-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

POWERFLAT 5X6 WF

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

SICFET N-CH 1200V 20A HIP247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 153W (Tc)
• Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: HiP247™
• Package / Case: TO-247-3

H2PAK-7

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
• Vgs(th) (Max) @ Id: 4.2V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V
• Vgs (Max): +18V, -5V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: H2PAK-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
• Vgs (Max): +18V, -5V
• FET Feature: -
• Power Dissipation (Max): 389W (Tc)
• Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: HiP247™
• Package / Case: TO-247-3

AUTOMOTIVE N-CHANNEL 80 V, 5.6 M

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3475 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 127W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerFlat™ (5x6)
• Package / Case: 8-PowerVDFN

MOSFET N-CH 40V 90A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

MOSFET N-CH 600V 40A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 Long Leads
• Package / Case: TO-247-3

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

MOSFET N-CH 1200V 6A TO3PF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

MOSFET N-CH 600V 15A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

SICFET N-CH 1200V 20A H2PAK-2

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 175W (Tc)
• Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: H2PAK-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

MOSFET N-CH 600V 63A TO247-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 390W (Tc)
• Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

MOSFET N-CH 40V 80A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 134W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

MOSFET N-CH 800V 16A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 64W (Tc)
• Rds On (Max) @ Id, Vgs: 372mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerFlat™ (5x6) HV
• Package / Case: 8-PowerVDFN