Page 47 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STB150N3LH6
STMicroelectronics

MOSFET N CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock22,308
STF3N62K3
STMicroelectronics

MOSFET N-CH 620V 2.7A TO-220FP

Package: TO-220-3 Full Pack

Stock121,536
STP6N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220

Package: TO-220-3

Stock8,820
STB76NF75
STMicroelectronics

MOSFET N-CH 75V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock21,324
STU2N62K3
STMicroelectronics

MOSFET N-CH 620V 2.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,696
STP7N52K3
STMicroelectronics

MOSFET N-CH 525V 6.2A TO220

Package: TO-220-3

Stock6,752
STU6NF10
STMicroelectronics

MOSFET N-CH 100V 6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock96,000
STF2LN60K3
STMicroelectronics

MOSFET N CH 600V 2A TO-220FP

Package: TO-220-3 Full Pack

Stock17,280
STSJ60NH3LL
STMicroelectronics

MOSFET N-CH 30V 15A 8-PWRSOIC

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock21,594
STB75NH02LT4
STMicroelectronics

MOSFET N-CH 24V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,000
STF5N52K3
STMicroelectronics

MOSFET N-CH 525V 4.4A TO-220FP

Package: TO-220-3 Full Pack

Stock6,000
STU3N45K3
STMicroelectronics

MOSFET N-CH 450V 1.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock16,860
STS4DNFS30
STMicroelectronics

MOSFET N-CH 30V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock18,660
STY50N105DK5
STMicroelectronics

MOSFET N-CH 1.05KVV 44A MAX247

Package: TO-247-3

Stock6,576
STWA40N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.110 OHM TYP.,

Package: TO-247-3

Stock7,044
STWA40N95DK5
STMicroelectronics

MOSFET N-CH 950V 38A TO247

Package: TO-247-3

Stock6,276
STW40N95DK5
STMicroelectronics

MOSFET N-CH 950V 38A TO247

Package: TO-247-3

Stock7,648
STW40N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.110 OHM TYP.,

Package: TO-247-3

Stock5,584
STF25N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 18A EP TO220FP

Package: TO-220-3 Full Pack

Stock17,604
STP25N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 18A EP TO220AB

Package: TO-220-3

Stock7,404

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STB150N3LH6	STMicroelectronics	MOSFET N CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock22,308	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	2.5V @ 250µA	80nC @ 10V	3800pF @ 25V	±20V	-	110W (Tc)	3 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF3N62K3	STMicroelectronics	MOSFET N-CH 620V 2.7A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock121,536	MOSFET (Metal Oxide)	620V	2.7A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	385pF @ 25V	±30V	-	20W (Tc)	2.5 Ohm @ 1.4A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP6N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 232pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock8,820	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	4V @ 250µA	8nC @ 10V	232pF @ 100V	±25V	-	60W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB76NF75	STMicroelectronics	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock21,324	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	160nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STU2N62K3	STMicroelectronics	MOSFET N-CH 620V 2.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,696	MOSFET (Metal Oxide)	620V	2.2A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	340pF @ 50V	±30V	-	45W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP7N52K3	STMicroelectronics	MOSFET N-CH 525V 6.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 737pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,752	MOSFET (Metal Oxide)	525V	6A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	737pF @ 100V	±30V	-	90W (Tc)	980 mOhm @ 3.1A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU6NF10	STMicroelectronics	MOSFET N-CH 100V 6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 3A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock96,000	MOSFET (Metal Oxide)	100V	6A (Tc)	10V	4V @ 250µA	14nC @ 10V	280pF @ 25V	±20V	-	30W (Tc)	250 mOhm @ 3A, 10V	-65°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF2LN60K3	STMicroelectronics	MOSFET N CH 600V 2A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,280	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	235pF @ 50V	±30V	-	20W (Tc)	4.5 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STSJ60NH3LL	STMicroelectronics	MOSFET N-CH 30V 15A 8-PWRSOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC-EP Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock21,594	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	1V @ 250µA	24nC @ 4.5V	1810pF @ 25V	±16V	-	3W (Ta), 50W (Tc)	5.7 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC-EP	8-SOIC (0.154", 3.90mm Width) Exposed Pad
STB75NH02LT4	STMicroelectronics	MOSFET N-CH 24V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,000	MOSFET (Metal Oxide)	24V	60A (Tc)	5V, 10V	1.8V @ 250µA	22nC @ 5V	2050pF @ 15V	±20V	-	80W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF5N52K3	STMicroelectronics	MOSFET N-CH 525V 4.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,000	MOSFET (Metal Oxide)	525V	4.4A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	545pF @ 100V	±30V	-	25W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU3N45K3	STMicroelectronics	MOSFET N-CH 450V 1.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock16,860	MOSFET (Metal Oxide)	450V	1.8A (Tc)	10V	4.5V @ 50µA	6nC @ 10V	150pF @ 25V	±30V	-	27W (Tc)	3.8 Ohm @ 500mA, 10V	-	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STS4DNFS30	STMicroelectronics	MOSFET N-CH 30V 4.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,660	MOSFET (Metal Oxide)	30V	4.5A (Tc)	5V, 10V	1V @ 250µA	4.7nC @ 5V	330pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Tc)	55 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STY50N105DK5	STMicroelectronics	MOSFET N-CH 1.05KVV 44A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock6,576	MOSFET (Metal Oxide)	1050V	44A (Tc)	10V	5V @ 100µA	175nC @ 10V	6600pF @ 100V	±30V	-	625W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C	Through Hole	MAX247?	TO-247-3
STWA40N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.110 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock7,044	MOSFET (Metal Oxide)	900V	40A	10V	5V @ 100µA	89nC @ 10V	3260pF @ 100V	±30V	Current Sensing	446W (Tc)	99 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
STWA40N95DK5	STMicroelectronics	MOSFET N-CH 950V 38A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock6,276	MOSFET (Metal Oxide)	950V	38A (Tc)	10V	5V @ 100µA	100nC @ 10V	3480pF @ 100V	±30V	-	450W (Tc)	130 mOhm @ 19A, 10V	-55°C ~ 150°C	Through Hole	TO-247 Long Leads	TO-247-3
STW40N95DK5	STMicroelectronics	MOSFET N-CH 950V 38A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,648	MOSFET (Metal Oxide)	950V	38A (Tc)	10V	5V @ 100µA	100nC @ 10V	3480pF @ 100V	±30V	-	450W (Tc)	130 mOhm @ 19A, 10V	-55°C ~ 150°C	Through Hole	TO-247	TO-247-3
STW40N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.110 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock5,584	MOSFET (Metal Oxide)	900V	40A	10V	5V @ 100µA	89nC @ 10V	3260pF @ 100V	±30V	Current Sensing	446W (Tc)	99 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STF25N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 18A EP TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 188 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,604	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1090pF @ 100V	±25V	-	30W (Tc)	188 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP25N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 18A EP TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 188 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,404	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1090pF @ 100V	±25V	-	150W (Tc)	188 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP43N60DM2	STMicroelectronics	MOSFET N-CH 600V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,984	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	5V @ 250µA	56nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	93 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STW28N60DM2	STMicroelectronics	MOSFET N-CH 600V 21A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,232	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	34nC @ 10V	1500pF @ 100V	±25V	-	170W (Tc)	160 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STF28N60DM2	STMicroelectronics	MOSFET N-CH 600V 21A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,960	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	34nC @ 10V	1500pF @ 100V	±25V	-	30W (Tc)	160 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP28N60DM2	STMicroelectronics	MOSFET N-CH 600V 21A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,712	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	34nC @ 10V	1500pF @ 100V	±25V	-	170W (Tc)	160 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STW33N60DM2	STMicroelectronics	MOSFET N-CH 600V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,432	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 250µA	43nC @ 10V	1870pF @ 100V	±25V	-	190W (Tc)	130 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP33N60DM2	STMicroelectronics	MOSFET N-CH 600V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,472	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 250µA	43nC @ 10V	1870pF @ 100V	±25V	-	190W (Tc)	130 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STW7N90K5	STMicroelectronics	N-CHANNEL 800 V, 0.75 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,024	MOSFET (Metal Oxide)	900V	-	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW8N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.60 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,900	MOSFET (Metal Oxide)	900V	-	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3