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STMicroelectronics |
MOSFET N-CH 500V 60A MAX247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247?
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock14,532 |
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MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 5V @ 250µA | 266nC @ 10V | 7500pF @ 25V | ±30V | - | 560W (Tc) | 50 mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 100V 140A MAX247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247?
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock18,012 |
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MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 4V @ 250µA | 600nC @ 10V | 12600pF @ 25V | ±20V | - | 450W (Tc) | 11 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | MAX247? | TO-247-3 |
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STMicroelectronics |
MOSFET N CH 75V 180A H2PAK-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
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Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock3,440 |
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MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4V @ 250µA | 87nC @ 10V | 6800pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-3, D2Pak (2 Leads + Tab) Variant |
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STMicroelectronics |
MOSFET N-CH 30V 160A POWERSO-10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PowerSO
- Package / Case: PowerSO-10 Exposed Bottom Pad
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Package: PowerSO-10 Exposed Bottom Pad |
Stock192,396 |
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MOSFET (Metal Oxide) | 30V | 160A (Tc) | 5V, 10V | 1V @ 250µA | 140nC @ 10V | 4700pF @ 25V | ±15V | - | 210W (Tc) | 2.8 mOhm @ 80A, 10V | 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
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STMicroelectronics |
MOSFET N-CH 600V 21A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,664 |
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MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | ±25V | - | 170W (Tc) | 160 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6665pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-6
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock3,584 |
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MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4V @ 250µA | 114.6nC @ 10V | 6665pF @ 25V | ±20V | - | 315W (Tc) | 4.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D2Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6665pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
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Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock2,544 |
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MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4V @ 250µA | 114.6nC @ 10V | 6665pF @ 25V | ±20V | - | 315W (Tc) | 4.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-3, D2Pak (2 Leads + Tab) Variant |
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STMicroelectronics |
MOSFET N-CH 650V 28A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,552 |
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MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 5V @ 250µA | 62.5nC @ 10V | 2700pF @ 100V | ±25V | - | 190W (Tc) | 110 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 22A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PolarPak?
- Package / Case: PolarPak?
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Package: PolarPak? |
Stock2,976 |
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MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 2500pF @ 25V | ±20V | - | 5.2W (Tc) | 6 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PolarPak? | PolarPak? |
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STMicroelectronics |
MOSFET N-CH 100V 21A PWRFLAT5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5117pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock27,840 |
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MOSFET (Metal Oxide) | 100V | 107A (Tc) | 10V | 4.5V @ 250µA | 72nC @ 10V | 5117pF @ 50V | ±20V | - | 136W (Tc) | 6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerSMD, Flat Leads |
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STMicroelectronics |
MOSFET N-CH 40V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock15,324 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 5100pF @ 25V | ±20V | - | 300W (Tc) | 4.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V
- Operating Temperature: -60°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock141,432 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 1V @ 250µA | 110nC @ 4.5V | 5500pF @ 25V | ±20V | - | 300W (Tc) | 4 mOhm @ 40A, 10V | -60°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock8,880 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 30.5nC @ 10V | 960pF @ 50V | ±25V | - | 90W (Tc) | 410 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 20A POWERFLAT6X5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (6x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock7,600 |
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MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 1V @ 250µA | 24nC @ 4.5V | 1810pF @ 25V | ±16V | - | 60W (Tc) | 5.7 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (6x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 500V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock114,468 |
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MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 4.5V @ 100µA | 68nC @ 10V | 1390pF @ 25V | ±30V | - | 125W (Tc) | 520 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock122,004 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 3850pF @ 25V | ±20V | - | 110W (Tc) | 4 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock123,840 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 5V, 10V | 3V @ 250µA | 80nC @ 10V | 4300pF @ 25V | ±20V | - | 110W (Tc) | 4 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 80V 90A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
|
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock5,008 |
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MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4.5V @ 250µA | 96nC @ 10V | 6340pF @ 40V | ±20V | - | 200W (Tc) | 4 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab) Variant |
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STMicroelectronics |
MOSFET N-CH 330V 18A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 330V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,608 |
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MOSFET (Metal Oxide) | 330V | 18A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1650pF @ 25V | ±20V | - | 150W (Tc) | 180 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 80A H2PAK-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
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Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock4,688 |
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MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 40nC @ 10V | 2700pF @ 25V | ±20V | - | 158W (Tc) | 3 mOhm @ 40A, 10V | 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab) Variant |
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STMicroelectronics |
MOSFET N-CH 100V 12A PWRFLAT5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 72W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock7,664 |
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MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 4.5V @ 250µA | 25nC @ 10V | 1640pF @ 50V | 20V | - | 5W (Ta), 72W (Tc) | 18 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerSMD, Flat Leads |
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STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,296 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 250µA | 62nC @ 10V | 3650pF @ 25V | ±20V | - | 110W (Tc) | 3 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock180,360 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | ±20V | - | 110W (Tc) | 6.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 650V 8.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock478,116 |
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MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 900pF @ 100V | ±25V | - | 70W (Tc) | 430 mOhm @ 4.3A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,208 |
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MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 250µA | 21.5nC @ 10V | 791pF @ 100V | ±25V | - | 110W (Tc) | 280 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 120A PWRFLAT 5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock2,816 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6.5V, 10V | 4V @ 1mA | 172nC @ 10V | 10700pF @ 10V | ±20V | - | 158W (Tc) | 1.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerSMD, Flat Leads |
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STMicroelectronics |
MOSFET N-CH 600V 8A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 355 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,216 |
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MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 704pF @ 100V | ±25V | - | 52W (Tc) | 355 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 80V 130A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,088 |
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MOSFET (Metal Oxide) | 80V | 130A (Tc) | 10V | 4.5V @ 250µA | 103nC @ 10V | 6800pF @ 40V | ±20V | - | 4.8W (Ta), 135W (Tc) | 3.6 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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