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STMicroelectronics |
MOSFET N-CH 600V TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,970 |
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MOSFET (Metal Oxide) | 600 V | 17A (Tj) | 10V | 4.75V @ 250µA | 23 nC @ 10 V | 960 pF @ 100 V | ±25V | - | 30W (Tc) | 190mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 900V 15A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 29.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1027 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 330mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock4,155 |
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MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 5V @ 100µA | 29.7 nC @ 10 V | 1027 pF @ 100 V | ±30V | - | 190W (Tc) | 330mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 62A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 62A (Tc) | - | - | - | - | ±25V | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 7.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,485 |
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MOSFET (Metal Oxide) | 500 V | 7.5A (Tc) | 10V | 5V @ 250µA | 13 nC @ 10 V | 415 pF @ 100 V | ±30V | - | 100W (Tc) | 800mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
TRANS SJT N-CH 650V PWRFLAT HV
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | - | 5V @ 1mA | 73 nC @ 20 V | 1370 pF @ 400 V | +22V, -10V | - | 417W (Tc) | 67mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
N-CHANNEL 650 V, 33 MOHM TYP., 7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
Stock51 |
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MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 4.75V @ 250µA | 118 nC @ 10 V | 5700 pF @ 100 V | ±25V | - | 480W (Tc) | 36mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 33V 80A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 33 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 33 V | 80A (Tc) | 10V | 4V @ 1mA | 58 nC @ 10 V | 1930 pF @ 25 V | ±20V | - | 180W (Tc) | 11mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
DISCRETE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 4V @ 100µA | 17.8 nC @ 10 V | 950 pF @ 400 V | ±30V | - | 115W (Tc) | 340mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
650 V, 75 MOHM TYP., 15 A, E-MOD
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 2.6V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
- Vgs (Max): +6V, -10V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (5x6) HV
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | 6V | 2.6V @ 12mA | 3 nC @ 6 V | 125 pF @ 400 V | +6V, -10V | - | 192W (Tc) | 120mOhm @ 5A, 6V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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STMicroelectronics |
POWERFLAT 5X6 WF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 373A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7657 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 0.75mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (5x6)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 373A (Tc) | 4.5V, 10V | 2V @ 250µA | 95 nC @ 10 V | 7657 pF @ 25 V | ±16V | - | 188W (Tc) | 0.75mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
N-CHANNEL 600 V, 0.084 OHM TYP.,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2468 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 174W (Tc)
- Rds On (Max) @ Id, Vgs: 84mOhm @ 22.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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Package: - |
Stock8,049 |
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MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 4.75V @ 250µA | 52 nC @ 10 V | 2468 pF @ 100 V | ±25V | - | 174W (Tc) | 84mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
POWERFLAT 5X6 WF
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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STMicroelectronics |
MOSFET N-CH 600V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,371 |
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MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4.75V @ 250µA | 16.7 nC @ 10 V | 575 pF @ 100 V | ±25V | - | 110W (Tc) | 320mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 650 V, 33 MOHM TYP., 7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 4.75V @ 250µA | 118 nC @ 10 V | 5700 pF @ 100 V | ±25V | - | 480W (Tc) | 36mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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STMicroelectronics |
DISCRETE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 347W (Tc)
- Rds On (Max) @ Id, Vgs: 82mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 4.75V @ 250µA | 54.4 nC @ 10 V | 2805 pF @ 100 V | ±25V | - | 347W (Tc) | 82mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V, 38 MOHM TYP., 5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
Stock537 |
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MOSFET (Metal Oxide) | 600 V | 56A (Tc) | 10V | 4.5V @ 250µA | 78.6 nC @ 10 V | 4675 pF @ 400 V | ±30V | - | 312W (Tc) | 43mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 650 V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 223W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,997 |
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MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 4.75V @ 250µA | 46 nC @ 10 V | 2000 pF @ 100 V | ±25V | - | 223W (Tc) | 115mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 10A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 4.75V @ 250µA | 13 nC @ 10 V | 509 pF @ 100 V | ±25V | - | 92W (Tc) | 380mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 34A TOLL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL (HV)
- Package / Case: 8-PowerSFN
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Package: - |
Stock5,400 |
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MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 4.75V @ 250µA | 72.5 nC @ 10 V | 3400 pF @ 100 V | ±25V | - | 150W (Tc) | 54mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL (HV) | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 600V 36A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 4.75V @ 250µA | 53.5 nC @ 10 V | 2340 pF @ 100 V | ±25V | - | 250W (Tc) | 80mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 75V 32A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 75 V | 32A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 7.5 nC @ 4.5 V | 800 pF @ 50 V | ±20V | - | 50W (Tc) | 25mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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STMicroelectronics |
POWERFLAT 5X6 WF
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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STMicroelectronics |
N-CHANNEL 600 V, 67 MOHM TYP., 4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL (HV)
- Package / Case: 8-PowerSFN
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Package: - |
Stock5,385 |
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MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 4.75V @ 250µA | 65.2 nC @ 10 V | 2500 pF @ 100 V | ±25V | - | 320W (Tc) | 76mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL (HV) | 8-PowerSFN |
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STMicroelectronics |
HU3PAK
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 4.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 223W (Tc)
- Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HU3PAK
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 30A (Tc) | 15V, 18V | 4.2V @ 1mA | 37 nC @ 18 V | 900 pF @ 850 V | +22V, -10V | - | 223W (Tc) | 87mOhm @ 15A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | HU3PAK | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 600V 5A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 4.75V @ 250µA | 6.2 nC @ 10 V | 274 pF @ 100 V | ±25V | - | 20W (Tc) | 1.1Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
DISCRETE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3344 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 4.75V @ 250µA | 80 nC @ 10 V | 3344 pF @ 100 V | ±25V | - | 391W (Tc) | 63mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 68A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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Package: - |
Stock45 |
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MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 4.75V @ 250µA | 125 nC @ 10 V | 4900 pF @ 100 V | ±25V | - | 450W (Tc) | 40mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 15A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4.75V @ 250µA | 20 nC @ 10 V | 800 pF @ 100 V | ±25V | - | 130W (Tc) | 230mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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