Page 82 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STV250N55F3
STMicroelectronics

MOSFET N-CH 55V 250A POWERSO-10

Package: PowerSO-10 Exposed Bottom Pad

Stock7,168
STW24NM65N
STMicroelectronics

MOSFET N-CH 650V 19A TO-247

Package: TO-247-3

Stock12,108
STW24NK55Z
STMicroelectronics

MOSFET N-CH 550V 23A TO-247

Package: TO-247-3

Stock6,976
STW19NM65N
STMicroelectronics

MOSFET N-CH 650V 15.5A TO-247

Package: TO-247-3

Stock12,840
STW14NM65N
STMicroelectronics

MOSFET N-CH 650V 12A TO-247

Package: TO-247-3

Stock3,888
STB200NF04L
STMicroelectronics

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,504
STB80PF55T4
STMicroelectronics

MOSFET P-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,000
STD5N20T4
STMicroelectronics

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock194,400
STW55NM60N
STMicroelectronics

MOSFET N-CH 600V 51A TO-247

Package: TO-247-3

Stock11,460
STW23NM60N
STMicroelectronics

MOSFET N-CH 600V 19A TO-247

Package: TO-247-3

Stock57,792
STW16NM50N
STMicroelectronics

MOSFET N-CH 500V 15A TO-247

Package: TO-247-3

Stock6,928
STW160N75F3
STMicroelectronics

MOSFET N-CH 75V 120A TO-247

Package: TO-247-3

Stock5,664
STW13NM50N
STMicroelectronics

MOSFET N-CH 500V 12A TO-247

Package: TO-247-3

Stock7,552
STW13NK50Z
STMicroelectronics

MOSFET N-CH 500V 11A TO-247

Package: TO-247-3

Stock4,480
STW12NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-247

Package: TO-247-3

Stock4,368
STU10NM65N
STMicroelectronics

MOSFET N-CH 650V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,160
STP9NM50N
STMicroelectronics

MOSFET N-CH 500V 7.5A TO-220

Package: TO-220-3

Stock390,000
STP90N4F3
STMicroelectronics

MOSFET N-CH 40V 80A TO-220

Package: TO-220-3

Stock391,560
STP8NM60N
STMicroelectronics

MOSFET N-CH 600V 7A TO-220

Package: TO-220-3

Stock44,196
STP60NH2LL
STMicroelectronics

MOSFET N-CH 24V 40A TO-220

Package: TO-220-3

Stock390,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STV250N55F3	STMicroelectronics	MOSFET N-CH 55V 250A POWERSO-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	Package: PowerSO-10 Exposed Bottom Pad	Stock7,168	MOSFET (Metal Oxide)	55V	200A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	300W (Tc)	2.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STW24NM65N	STMicroelectronics	MOSFET N-CH 650V 19A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock12,108	MOSFET (Metal Oxide)	650V	19A (Tc)	10V	4V @ 250µA	70nC @ 10V	2500pF @ 50V	±25V	-	160W (Tc)	190 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW24NK55Z	STMicroelectronics	MOSFET N-CH 550V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4397.5pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 285W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,976	MOSFET (Metal Oxide)	550V	23A (Tc)	10V	4.5V @ 100µA	130nC @ 10V	4397.5pF @ 25V	±30V	-	285W (Tc)	220 mOhm @ 11.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW19NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock12,840	MOSFET (Metal Oxide)	650V	15.5A (Tc)	10V	4V @ 250µA	55nC @ 10V	1900pF @ 50V	±25V	-	150W (Tc)	270 mOhm @ 7.75A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW14NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,888	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	45nC @ 10V	1300pF @ 50V	±25V	-	125W (Tc)	380 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB200NF04L	STMicroelectronics	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,504	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	4V @ 250µA	90nC @ 4.5V	6400pF @ 25V	±16V	-	300W (Tc)	3.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB80PF55T4	STMicroelectronics	MOSFET P-CH 55V 80A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,000	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	258nC @ 10V	5500pF @ 25V	±16V	-	300W (Tc)	18 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD5N20T4	STMicroelectronics	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock194,400	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	45W (Tc)	800 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STW55NM60N	STMicroelectronics	MOSFET N-CH 600V 51A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,460	MOSFET (Metal Oxide)	600V	51A (Tc)	10V	4V @ 250µA	190nC @ 10V	5800pF @ 50V	±25V	-	350W (Tc)	60 mOhm @ 25.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW23NM60N	STMicroelectronics	MOSFET N-CH 600V 19A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock57,792	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 250µA	60nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,928	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	38nC @ 10V	1200pF @ 50V	±25V	-	125W (Tc)	260 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW160N75F3	STMicroelectronics	MOSFET N-CH 75V 120A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,664	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	85nC @ 10V	6750pF @ 25V	±20V	-	330W (Tc)	4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,552	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	100W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW13NK50Z	STMicroelectronics	MOSFET N-CH 500V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,480	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4.5V @ 100µA	47nC @ 10V	1600pF @ 25V	±30V	-	140W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW12NM60N	STMicroelectronics	MOSFET N-CH 600V 10A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,368	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	30.5nC @ 10V	960pF @ 50V	±25V	-	90W (Tc)	410 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STU10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,160	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 250µA	25nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	480 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP9NM50N	STMicroelectronics	MOSFET N-CH 500V 7.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	570pF @ 50V	±25V	-	70W (Tc)	560 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP90N4F3	STMicroelectronics	MOSFET N-CH 40V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock391,560	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	54nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock44,196	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	70W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP60NH2LL	STMicroelectronics	MOSFET N-CH 24V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	24V	40A (Tc)	4.5V, 10V	1V @ 250µA	27nC @ 4.5V	990pF @ 25V	±18V	-	60W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP60N55F3	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock848,496	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	45nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	8.5 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP3NK100Z	STMicroelectronics	MOSFET N-CH 1000V 2.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 601pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,600	MOSFET (Metal Oxide)	1000V	2.5A (Tc)	10V	4.5V @ 50µA	18nC @ 10V	601pF @ 25V	±30V	-	90W (Tc)	6 Ohm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP30NM30N	STMicroelectronics	MOSFET N-CH 300V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 15A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock13,620	MOSFET (Metal Oxide)	300V	30A (Tc)	10V	4V @ 250µA	75nC @ 10V	2500pF @ 50V	±20V	-	160W (Tc)	90 mOhm @ 15A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP300NH02L	STMicroelectronics	MOSFET N-CH 24V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock396,180	MOSFET (Metal Oxide)	24V	120A (Tc)	10V	2V @ 250µA	109.4nC @ 10V	7055pF @ 15V	±20V	-	300W (Tc)	2.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP180N55F3	STMicroelectronics	MOSFET N-CH 55V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock416,724	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	330W (Tc)	3.8 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock8,808	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	38nC @ 10V	1200pF @ 50V	±25V	-	125W (Tc)	260 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP16NF25	STMicroelectronics	MOSFET N-CH 250V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,864	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	18nC @ 10V	680pF @ 25V	±20V	-	100W (Tc)	235 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock11,196	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3