Page 86 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STU95N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,752
STU75N3LLH6-S
STMicroelectronics

MOSFET N-CH 30V 75A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,376
STU40N2LH5
STMicroelectronics

MOSFET N-CH 25V 40A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,152
STU27N3LH5
STMicroelectronics

MOSFET N-CH 30V 27A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock120,852
STI30NM60N
STMicroelectronics

MOSFET N-CH 600V 25A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,056
STI200N6F3
STMicroelectronics

MOSFET N-CH 60V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,472
STI18NM60N
STMicroelectronics

MOSFET N-CH 600V 13A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,304
STF5N52U
STMicroelectronics

MOSFET N-CH 525V 4.4A TO-220FP

Package: TO-220-3 Full Pack

Stock155,436
STB70N10F4
STMicroelectronics

MOSFET N-CH 100V 65A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock792,132
STK30N2LLH5
STMicroelectronics

MOSFET N-CH 25V 30A POLARPAK

Package: PolarPak?

Stock5,360
STB18NM60N
STMicroelectronics

MOSFET N-CH 600V 13A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock780,168
STL25N15F4
STMicroelectronics

MOSFET N-CH 150V 25A POWERFLAT

Package: 8-PowerVDFN

Stock3,248
STD70N2LH5
STMicroelectronics

MOSFET N-CH 25V 48A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock511,812
STD3NK60ZD
STMicroelectronics

MOSFET N-CH 600V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock38,160
STP35N65M5
STMicroelectronics

MOSFET N-CH 650V 27A TO-220

Package: TO-220-3

Stock390,000
STD40N2LH5
STMicroelectronics

MOSFET N-CH 25V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock157,212
STB50N25M5
STMicroelectronics

MOSFET N-CH 250V 28A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock451,752
STB95N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock25,920
STS30N3LLH6
STMicroelectronics

MOSFET N-CH 30V 30A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,624
STP95N2LH5
STMicroelectronics

MOSFET N-CH 25V 80A TO-220

Package: TO-220-3

Stock5,088

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STU95N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,752	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 4.5V	2200pF @ 25V	±25V	-	70W (Tc)	4.7 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STU75N3LLH6-S	STMicroelectronics	MOSFET N-CH 30V 75A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,376	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	1690pF @ 25V	±20V	-	60W (Tc)	5.9 mOhm @ 37.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STU40N2LH5	STMicroelectronics	MOSFET N-CH 25V 40A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,152	MOSFET (Metal Oxide)	25V	40A (Tc)	5V, 10V	1V @ 250µA	6.3nC @ 5V	700pF @ 20V	±22V	-	35W (Tc)	12.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STU27N3LH5	STMicroelectronics	MOSFET N-CH 30V 27A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock120,852	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	1V @ 250µA	4.6nC @ 5V	475pF @ 25V	±22V	-	30W (Tc)	20 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STI30NM60N	STMicroelectronics	MOSFET N-CH 600V 25A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,056	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	4V @ 250µA	91nC @ 10V	2700pF @ 50V	±30V	-	190W (Tc)	130 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI200N6F3	STMicroelectronics	MOSFET N-CH 60V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6265pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,472	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	101nC @ 10V	6265pF @ 25V	±20V	-	330W (Tc)	3.8 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STI18NM60N	STMicroelectronics	MOSFET N-CH 600V 13A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,304	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	35nC @ 10V	1000pF @ 50V	±25V	-	110W (Tc)	285 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STF5N52U	STMicroelectronics	MOSFET N-CH 525V 4.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock155,436	MOSFET (Metal Oxide)	525V	4.4A (Tc)	10V	4.5V @ 50µA	16.9nC @ 10V	529pF @ 25V	±30V	-	25W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STB70N10F4	STMicroelectronics	MOSFET N-CH 100V 65A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock792,132	MOSFET (Metal Oxide)	100V	65A (Tc)	10V	4V @ 250µA	85nC @ 10V	5800pF @ 25V	±20V	-	150W (Tc)	19.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STK30N2LLH5	STMicroelectronics	MOSFET N-CH 25V 30A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock5,360	MOSFET (Metal Oxide)	25V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	18nC @ 4.5V	2290pF @ 25V	±20V	-	5.2W (Tc)	2.9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STB18NM60N	STMicroelectronics	MOSFET N-CH 600V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock780,168	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	35nC @ 10V	1000pF @ 50V	±25V	-	110W (Tc)	285 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL25N15F4	STMicroelectronics	MOSFET N-CH 150V 25A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,248	MOSFET (Metal Oxide)	150V	25A (Tc)	10V	4V @ 250µA	48nC @ 10V	2710pF @ 25V	±20V	-	80W (Tc)	63 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STD70N2LH5	STMicroelectronics	MOSFET N-CH 25V 48A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock511,812	MOSFET (Metal Oxide)	25V	48A (Tc)	5V, 10V	1V @ 250µA	8nC @ 5V	1300pF @ 25V	±22V	-	60W (Tc)	7.1 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NK60ZD	STMicroelectronics	MOSFET N-CH 600V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock38,160	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	45W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP35N65M5	STMicroelectronics	MOSFET N-CH 650V 27A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	650V	27A (Tc)	10V	5V @ 250µA	83nC @ 10V	3750pF @ 100V	±25V	-	160W (Tc)	98 mOhm @ 13.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD40N2LH5	STMicroelectronics	MOSFET N-CH 25V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock157,212	MOSFET (Metal Oxide)	25V	40A (Tc)	5V, 10V	1V @ 250µA	6.3nC @ 5V	700pF @ 20V	±22V	-	35W (Tc)	11.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB50N25M5	STMicroelectronics	MOSFET N-CH 250V 28A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock451,752	MOSFET (Metal Oxide)	250V	28A (Tc)	10V	5V @ 100µA	44nC @ 10V	1700pF @ 50V	±25V	-	110W (Tc)	65 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB95N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,920	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	24.5nC @ 4.5V	2200pF @ 25V	±20V	-	70W (Tc)	4.2 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STS30N3LLH6	STMicroelectronics	MOSFET N-CH 30V 30A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,624	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4040pF @ 25V	±20V	-	2.7W (Tc)	2.4 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STP95N2LH5	STMicroelectronics	MOSFET N-CH 25V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,088	MOSFET (Metal Oxide)	25V	80A (Tc)	5V, 10V	1V @ 250µA	13.4nC @ 5V	1817pF @ 25V	±22V	-	80W (Tc)	4.9 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP200N6F3	STMicroelectronics	MOSFET N-CH 60V 120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,544	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	330W (Tc)	3.9 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,040	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	22nC @ 10V	560pF @ 50V	±30V	-	70W (Tc)	700 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF5NK52ZD	STMicroelectronics	MOSFET N-CH 520V 4.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 520V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,856	MOSFET (Metal Oxide)	520V	4.4A (Tc)	10V	4.5V @ 50µA	16.9nC @ 10V	529pF @ 25V	±30V	-	25W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF40NF03L	STMicroelectronics	MOSFET N-CH 30V 23A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,712	MOSFET (Metal Oxide)	30V	23A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	770pF @ 25V	±16V	-	25W (Tc)	22 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock417,300	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 250µA	94nC @ 10V	2740pF @ 50V	±25V	-	40W (Tc)	115 mOhm @ 13.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD6NM60N-1	STMicroelectronics	MOSFET N-CH 600V 4.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock164,640	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	45W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STK28N3LLH5	STMicroelectronics	MOSFET N-CH 30V 28A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock6,480	MOSFET (Metal Oxide)	30V	28A (Tc)	4.5V, 10V	2.5V @ 250µA	19nC @ 4.5V	2300pF @ 25V	±22V	-	5.2W (Tc)	4.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STK20N75F3	STMicroelectronics	MOSFET N-CH 75V 20A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock4,640	MOSFET (Metal Oxide)	75V	20A (Tc)	10V	4V @ 250µA	53nC @ 10V	3150pF @ 25V	±20V	-	5.2W (Tc)	7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?