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Taiwan Semiconductor Corporation |
DIODE, ZENER, 220V, 1000MW, %, A
- Voltage - Zener (Nom) (Vz): 220.5V
- Tolerance: ±5.66%
- Power - Max: 1W
- Impedance (Max) (Zzt): 900 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 160V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock6,448 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 9.1V, 1000MW, %, S
- Voltage - Zener (Nom) (Vz): 9.05V
- Tolerance: ±6.07%
- Power - Max: 1W
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 5V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock5,536 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 200V, 1000MW, %, A
- Voltage - Zener (Nom) (Vz): 200V
- Tolerance: ±6%
- Power - Max: 1W
- Impedance (Max) (Zzt): 750 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock3,312 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 130V, 1000MW, %, D
- Voltage - Zener (Nom) (Vz): 130V
- Tolerance: ±5%
- Power - Max: 1.25W
- Impedance (Max) (Zzt): 700 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 98.8V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: DO-214AC, SMA |
Stock7,136 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 68V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 68V
- Tolerance: ±5.88%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 51V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock4,416 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 47V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 47V
- Tolerance: ±6.38%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 36V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock3,120 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 27V, 800MW, %, SUB
- Voltage - Zener (Nom) (Vz): 27V
- Tolerance: ±7.03%
- Power - Max: 800mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 20V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock6,784 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 16V, 200MW, 5%, SO
- Voltage - Zener (Nom) (Vz): 16V
- Tolerance: ±5%
- Power - Max: 200mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 45nA @ 11.2V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: SC-90, SOD-323F |
Stock2,688 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 23.72V, 500MW, %,
- Voltage - Zener (Nom) (Vz): 23.72V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 35 Ohms
- Current - Reverse Leakage @ Vr: 200nA @ 19V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: DO-204AG, DO-34, Axial |
Stock3,440 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 2A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Current - Reverse Leakage @ Vr: 2µA @ 1200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: 4-SMD, Gull Wing |
Stock2,608 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 21pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock59,940 |
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Taiwan Semiconductor Corporation |
SOD-123, 350MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 8.2 V
- Tolerance: ±5%
- Power - Max: 350 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 700 nA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 410MW, 2%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 5.1 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 400V 500MA MBS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 500 mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-BESOP (0.173", 4.40mm Width)
- Supplier Device Package: MBS
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
25NS, 2A, 200V, ULTRA FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: 31pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock60,000 |
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Taiwan Semiconductor Corporation |
1A, 30V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
MOSFET 2N-CH 30V 12A/51A 8PDFNU
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
- Power - Max: 2W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFNU (5x6)
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Package: - |
Stock15,000 |
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Taiwan Semiconductor Corporation |
SUB SMA, 1000MW, 6%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 13.25 V
- Tolerance: ±6.42%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
200MA, LOW-IQ 30A LOW-DROPOUT LI
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 50V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.34V @ 200mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 77 µA
- Current - Supply (Max): -
- PSRR: 59dB (100Hz)
- Control Features: Enable
- Protection Features: Over Temperature
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOP-EP
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Package: - |
Stock14,850 |
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Taiwan Semiconductor Corporation |
50NS, 4A, 200V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 62pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock18,000 |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 350MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 47 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 170 Ohms
- Current - Reverse Leakage @ Vr: 45 nA @ 33 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
QMMELF, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 20 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 15 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: QMMELF
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-323F, 200MW, 5%, ZENER DIODE
- Voltage - Zener (Nom) (Vz): 24 V
- Tolerance: ±5%
- Power - Max: 200 mW
- Impedance (Max) (Zzt): 70 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 19 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Package: - |
Stock9,000 |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 600V 25A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: - |
Stock3,600 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock14,850 |
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Taiwan Semiconductor Corporation |
-20V, -4.7A, SINGLE P-CHANNEL PO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 0.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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