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Taiwan Semiconductor Corporation |
DIODE, ZENER, 19V, 2000MW, %, DO
- Voltage - Zener (Nom) (Vz): 19V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 11 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 14.4V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock4,672 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 110V, 2000MW, %, D
- Voltage - Zener (Nom) (Vz): 110V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 250 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 83.6V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock2,640 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 16V, 2000MW, %, DO
- Voltage - Zener (Nom) (Vz): 16V
- Tolerance: ±5%
- Power - Max: 2W
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 500nA @ 12.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
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Package: DO-204AC, DO-15, Axial |
Stock3,408 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 68V, 1000MW, %, AE
- Voltage - Zener (Nom) (Vz): 68V
- Tolerance: ±5.88%
- Power - Max: 1W
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 51V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock2,288 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 200V, 1000MW, %, S
- Voltage - Zener (Nom) (Vz): 200V
- Tolerance: ±6%
- Power - Max: 1W
- Impedance (Max) (Zzt): 750 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
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Package: DO-219AB |
Stock7,632 |
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Taiwan Semiconductor Corporation |
DIODE, ZENER, 6.2V, 500MW, 5%, Q
- Voltage - Zener (Nom) (Vz): 6.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 2V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: Mini MELF
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Package: SOD-80 Variant |
Stock3,856 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 6A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: 4-SIP, TS-6P |
Stock5,728 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 6A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock4,512 |
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Taiwan Semiconductor Corporation |
2A, 1200V, STANDARD RECOVERY REC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 1200 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 4A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
40A, 600V, STANDARD BRIDGE RECTI
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 40 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: - |
Stock600 |
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Taiwan Semiconductor Corporation |
35NS, 16A, 600V, SUPER FAST RECO
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (TO-3P)
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Package: - |
Stock2,700 |
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Taiwan Semiconductor Corporation |
DO-34, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 34.27 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 75 Ohms
- Current - Reverse Leakage @ Vr: 200 nA @ 27 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
75NS, 2A, 1000V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock30,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 6.2 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 10 µA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARRAY GP 10A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Stock3,000 |
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Taiwan Semiconductor Corporation |
DO-35, 500MW, 2%, SMALL SIGNAL Z
- Voltage - Zener (Nom) (Vz): 22 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 55 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 17 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock7,500 |
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Taiwan Semiconductor Corporation |
150NS, 3A, 200V, FAST RECOVERY R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock8,700 |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 82V 1.25W DO214AC
- Voltage - Zener (Nom) (Vz): 82 V
- Tolerance: ±5%
- Power - Max: 1.25 W
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ZENER 39V 1.25W DO214AC
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: ±5%
- Power - Max: 1.25 W
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 60V 10A THINDPAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: ThinDPAK
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Package: - |
Stock13,497 |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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Taiwan Semiconductor Corporation |
SOD-123, 500MW, 5%, SMALL SIGNAL
- Voltage - Zener (Nom) (Vz): 28 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 10 nA @ 21.2 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Package: - |
Request a Quote |
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