|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock4,464 |
|
50mA | 20V | 10k | - | 300 @ 1mA, 5V | 150mV @ 250µA, 5mA | 100nA (ICBO) | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock3,488 |
|
50mA | 20V | 4.7k | - | 300 @ 1mA, 5V | 150mV @ 250µA, 5mA | 100nA (ICBO) | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock4,640 |
|
50mA | 20V | 47k | 22k | 100 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock3,744 |
|
50mA | 20V | 22k | 47k | 120 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock6,496 |
|
50mA | 20V | 10k | 47k | 120 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock7,456 |
|
50mA | 20V | 4.7k | 47k | 120 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock2,736 |
|
50mA | 20V | 2.2k | 47k | 120 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock5,232 |
|
50mA | 20V | 47k | 47k | 120 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock2,624 |
|
50mA | 20V | 22k | 22k | 100 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock4,576 |
|
50mA | 20V | 10k | 10k | 60 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock720,000 |
|
50mA | 20V | 4.7k | 4.7k | 30 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock2,336 |
|
100mA | 50V | 47k | 10k | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock6,976 |
|
100mA | 50V | 10k | 4.7k | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock6,352 |
|
100mA | 50V | 22k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock7,280 |
|
100mA | 50V | 47k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.15W VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Package: SOT-723 |
Stock1,824,000 |
|
100mA | 50V | 4.7k | 47k | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.2W S-MINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 30MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,800 |
|
300mA | 20V | 2.2k | - | 200 @ 4mA, 2V | 100mV @ 3mA, 30mA | 100nA (ICBO) | 30MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.2W S-MINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,784 |
|
100mA | 50V | 10k | 10k | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 200MW SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,040 |
|
800mA | 50V | 2.2k | 10k | 90 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 200MW SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,224 |
|
800mA | 50V | 2.2k | 2.2k | 65 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,784 |
|
800mA | 50V | 2.2k | 10k | 90 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,656 |
|
800mA | 50V | 1k | 10k | 90 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 470
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,480 |
|
800mA | 50V | 470 | 10k | 90 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,120 |
|
800mA | 50V | 10k | 10k | 90 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,984 |
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800mA | 50V | 4.7k | 4.7k | 70 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock27,600 |
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800mA | 50V | 2.2k | 2.2k | 65 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,904 |
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800mA | 50V | 1k | 1k | 60 @ 100mA, 1V | 250mV @ 2mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock5,984 |
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100mA | 50V | 4.7k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |