Page 5 - Toshiba Semiconductor and Storage Products - Transistors - Bipolar (BJT) - Single, Pre-Biased

RN2112-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Package: -

Stock18,000
RN1101-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Package: -

Stock26,871
RN2104MFV-L3XHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Package: -

Stock23,370
RN2113MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Package: -

Stock24,000
RN1412-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Package: -

Stock18,000
TDTC143E-LM
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

Package: -

Stock8,049
RN1118MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Package: -

Request a Quote
RN1307-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Package: -

Stock17,550
RN2114MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Package: -

Stock24,000
RN2305-TE85L-F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A USM

Package: -

Stock321
RN1116-LF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Package: -

Stock18,510
RN2108MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Package: -

Stock24,000
RN1106MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Package: -

Stock23,907
RN2109MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Package: -

Stock23,850
RN1407-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Package: -

Stock17,394
RN1119MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Package: -

Stock24,000
RN2115MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Package: -

Stock47,964
RN1304-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Package: -

Stock7,956
RN2418-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Package: -

Stock18,000
TDTA124E-LM
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SOT23-3

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN2112-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock18,000	100 mA	50 V	22 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
RN1101-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock26,871	100 mA	50 V	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
RN2104MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock23,370	100 mA	50 V	47 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VESM
RN2113MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150 mW	Surface Mount	SOT-723	VESM
RN1412-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock18,000	100 mA	50 V	22 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
TDTC143E-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: -	Stock8,049	100 mA	50 V	4.7 kOhms	-	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
RN1118MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Request a Quote	100 mA	50 V	47 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VESM
RN1307-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	Package: -	Stock17,550	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
RN2114MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	1 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
RN2305-TE85L-F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	Package: -	Stock321	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
RN1116-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock18,510	100 mA	50 V	4.7 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
RN2108MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
RN1106MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock23,907	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
RN2109MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock23,850	100 mA	50 V	47 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
RN1407-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock17,394	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
RN1119MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	1 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150 mW	Surface Mount	SOT-723	VESM
RN2115MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock47,964	100 mA	50 V	2.2 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
RN1304-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	Package: -	Stock7,956	100 mA	50 V	47 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
RN2418-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock18,000	100 mA	50 V	47 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
TDTA124E-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: -	Stock9,000	100 mA	50 V	22 kOhms	-	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
RN1131MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	100 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150 mW	Surface Mount	SOT-723	VESM
RN2105MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VESM
RN2415-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock18,000	100 mA	50 V	2.2 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
RN1132MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 200 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	200 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150 mW	Surface Mount	SOT-723	VESM
RN2116MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock47,961	100 mA	50 V	4.7 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
RN2105-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock35,895	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
RN2105-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock18,000	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
RN2107MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock47,940	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM