Page 15 - Toshiba Semiconductor and Storage Products - Transistors - Bipolar (BJT) - Single

2SD2206(T6CANO,F,M
Toshiba Semiconductor and Storage

TRANS NPN 2A 100V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock4,368
2SD2129,LS4ALPSQ(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

Package: TO-220-3 Full Pack

Stock3,840
2SD2129,ALPSQ(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

Package: TO-220-3 Full Pack

Stock4,784
2SC6139,T2F(M
Toshiba Semiconductor and Storage

TRANS NPN 1.5A 160V SC71

Package: SC-71

Stock2,736
2SC6042,T2WNLQ(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 375V SC71

Package: SC-71

Stock2,192
2SC6042,T2HOSH1Q(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 375V SC71

Package: SC-71

Stock2,688
2SC6040,T2Q(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 800V SC71

Package: SC-71

Stock4,784
2SC6040(TPF2,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 1A 800V SC71

Package: SC-71

Stock4,368
2SC6010(T2MITUM,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

Package: SC-71

Stock6,576
2SC5930(TPF2,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

Package: SC-71

Stock3,296
2SC5930(T2MITUM,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

Package: SC-71

Stock3,200
2SC5549,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 400V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock2,432
2SC5459(TOJS,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 3A 400V TO220-3

Package: TO-220-3 Full Pack

Stock2,736
2SC5201,T6MURAF(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock3,888
2SC5201,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock2,560
2SC5201,F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock7,440
2SC5201(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock6,992
2SC5201(T6MURATAFM
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

Package: TO-226-3, TO-92-3 Long Body

Stock3,728
2SC5172(YAZK,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 5A 400V TO220-3

Package: TO-220-3 Full Pack

Stock2,304
2SC5171,Q(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

Package: TO-220-3 Full Pack

Stock2,464

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SD2206(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 100V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock4,368	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2129,LS4ALPSQ(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock3,840	3A	100V	2V @ 12mA, 3A	100µA (ICBO)	2000 @ 1.5A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2129,ALPSQ(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock4,784	3A	100V	2V @ 12mA, 3A	100µA (ICBO)	2000 @ 1.5A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC6139,T2F(M	Toshiba Semiconductor and Storage	TRANS NPN 1.5A 160V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock2,736	1.5A	160V	500mV @ 50mA, 500mA	100nA (ICBO)	140 @ 100mA, 5V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6042,T2WNLQ(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 375V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock2,192	1A	375V	1V @ 100mA, 800mA	100µA (ICBO)	100 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6042,T2HOSH1Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 375V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock2,688	1A	375V	1V @ 100mA, 800mA	100µA (ICBO)	100 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6040,T2Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 800V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock4,784	1A	800V	1V @ 100mA, 800mA	100µA (ICBO)	60 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6040(TPF2,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 800V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock4,368	1A	800V	1V @ 100mA, 800mA	100µA (ICBO)	60 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6010(T2MITUM,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock6,576	1A	600V	1V @ 75mA, 600mA	100µA (ICBO)	100 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC5930(TPF2,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock3,296	1A	600V	1V @ 75mA, 600mA	100µA (ICBO)	40 @ 200mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC5930(T2MITUM,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock3,200	1A	600V	1V @ 75mA, 600mA	100µA (ICBO)	40 @ 200mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC5549,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 400V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V Power - Max: 900mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock2,432	1A	400V	1V @ 25mA, 200mA	100µA (ICBO)	20 @ 40mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5459(TOJS,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 3A 400V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock2,736	3A	400V	1V @ 150mA, 1.2A	100µA (ICBO)	20 @ 300mA, 5V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5201,T6MURAF(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock3,888	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock2,560	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201,F(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock7,440	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock6,992	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201(T6MURATAFM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Package: TO-226-3, TO-92-3 Long Body	Stock3,728	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5172(YAZK,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 5A 400V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock2,304	5A	400V	1V @ 250mA, 2A	20µA (ICBO)	20 @ 500mA, 5V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171,Q(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock2,464	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171,ONKQ(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock2,112	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171,MATUDQ(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock5,584	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171(ONK,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock6,992	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171(LBS2MATQ,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock2,736	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC4935-Y,Q(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 50V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock5,184	3A	50V	600mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	2W	80MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC4881,LS1SUMIF(M	Toshiba Semiconductor and Storage	TRANS NPN 5A 50V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock5,600	5A	50V	400mV @ 125mA, 2.5A	1µA (ICBO)	100 @ 1A, 1V	2W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC4881(CANO,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 5A 50V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock5,248	5A	50V	400mV @ 125mA, 2.5A	1µA (ICBO)	100 @ 1A, 1V	2W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC4793,YHF(M	Toshiba Semiconductor and Storage	TRANS NPN 1A 230V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	Package: TO-220-3 Full Pack	Stock2,992	1A	230V	1.5V @ 50mA, 500mA	1µA (ICBO)	100 @ 100mA, 5V	2W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS