|
|
Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock84,378 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock237,066 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 350 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 120V 0.1A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock115,128 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 350 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SSM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock25,926 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 350 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock21,948 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 150mW | 80MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock75,294 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 300V 100MA TO236-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock27,204 |
|
100mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 30 @ 20mA, 10V | 150mW | 50MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 20V 300MA SC70
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
- Power - Max: 100mW
- Frequency - Transition: 30MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock22,992 |
|
300mA | 20V | 100mV @ 3mA, 30A | 100nA (ICBO) | 200 @ 4mA, 2V | 100mW | 30MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 500MA TO236-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock58,560 |
|
500mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 100mA, 1V | 200mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 150MA SC70
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock59,874 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 320mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,080 |
|
150mA | 50V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 100 @ 10mA, 1V | 320mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 25V 0.8A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock27,300 |
|
800mA | 25V | 400mV @ 20mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 200mW | 120MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock105,714 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 100mW | 100MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A USM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock2,863,872 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock28,974 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 25V 0.8A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,506 |
|
800mA | 25V | 400mV @ 20mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 200mW | 120MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 20V 0.3A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
- Power - Max: 150mW
- Frequency - Transition: 30MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock269,646 |
|
300mA | 20V | 100mV @ 3mA, 30mA | 100nA (ICBO) | 200 @ 4mA, 2V | 150mW | 30MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 20V 0.3A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 150mW
- Frequency - Transition: 30MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock511,104 |
|
300mA | 20V | 100mV @ 3mA, 30mA | 100nA (ICBO) | 350 @ 4mA, 2V | 150mW | 30MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.5A SMINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock56,544 |
|
500mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 100mA, 1V | 200mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock102,510 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 350 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.5A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock197,706 |
|
500mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 100mA, 1V | 200mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 120V 0.1A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock83,070 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A SMINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock67,398 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150mW | 100MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 120V 0.1A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock622,956 |
|
100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 100mW | 100MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A USM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock139,338 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock299,178 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 150mW | 80MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,122 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 150mW | 80MHz | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 320mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock22,998 |
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150mA | 50V | 300mV @ 5mA, 50mA | 100nA (ICBO) | 100 @ 10mA, 1V | 320mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |