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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 88A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 60V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 21A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,736 |
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MOSFET (Metal Oxide) | 120V | 88A (Tc) | 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | ±20V | - | 140W (Tc) | 9.4 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: USM
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock5,264 |
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MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 1.5V @ 1µA | - | 7pF @ 3V | - | - | 150mW (Ta) | 20 Ohm @ 10mA, 4V | - | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock15,120 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 9.5nC @ 10V | 690pF @ 10V | ±20V | - | 700mW (Ta), 15W (Tc) | 25 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 17W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,184 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 15nC @ 10V | 1100pF @ 10V | ±20V | - | 700mW (Ta), 17W (Tc) | 15 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 18W (Tc)
- Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock273,600 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | ±20V | - | 700mW (Ta), 18W (Tc) | 11.4 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,704 |
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MOSFET (Metal Oxide) | 30V | 24A (Ta) | - | 3V @ 200µA | 26nC @ 10V | 1270pF @ 10V | - | - | - | 7 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock3,200 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 19nC @ 10V | 1800pF @ 10V | ±20V | Schottky Diode (Body) | - | 10.1 mOhm @ 6A, 10V | - | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 10A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock6,752 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 15nC @ 10V | 1700pF @ 10V | ±20V | Schottky Diode (Body) | 1W (Ta) | 13.3 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock5,888 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | +20V, -25V | - | 1W (Ta) | 10 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,568 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2V @ 500µA | 64nC @ 10V | 2580pF @ 10V | +20V, -25V | - | 1W (Ta) | 13 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock373,284 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 1.2V @ 200µA | 9nC @ 5V | 630pF @ 10V | ±12V | - | 700mW (Ta) | 20 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,920 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 14nC @ 10V | 640pF @ 10V | ±20V | - | 700mW (Ta) | 20 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,688 |
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MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | ±20V | - | 700mW (Ta) | 59 mOhm @ 3.1A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 81 mOhm @ 2.7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,392 |
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MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | ±20V | - | 700mW (Ta) | 81 mOhm @ 2.7A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,632 |
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MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | ±20V | - | 700mW (Ta) | 60 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: -
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Package: - |
Stock4,400 |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,408 |
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MOSFET (Metal Oxide) | 75V | 50A | - | - | 55nC @ 10V | - | - | - | - | 12 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,248 |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,552 |
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MOSFET (Metal Oxide) | 60V | 50A | - | - | 54nC @ 10V | - | - | - | - | 8.5 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,016 |
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MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,216 |
|
MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 80W (Tc) | 2.2 Ohm @ 1.8A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 1.88 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock48,000 |
|
MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 80W (Tc) | 1.88 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,920 |
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MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 80W (Tc) | 2.45 Ohm @ 1.8A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,432 |
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MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 1.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,008 |
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MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.9 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,488 |
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MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 35W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.88 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,168 |
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MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 35W (Tc) | 1.88 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,976 |
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MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 30W (Tc) | 2.45 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |