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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,256 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,168 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,648 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 2A SOT23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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Package: SOT-23-3 Flat Leads |
Stock141,906 |
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Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V SC71
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock7,712 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,320 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,256 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 600V 30A TO3P
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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Package: TO-3P-3, SC-65-3 |
Stock5,840 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 250MA 3HSIP
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: 3-HSIP
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Package: TO-220-3 Full Pack |
Stock2,400 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 250MA 3HSIP
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: 3-HSIP
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Package: TO-220-3 Full Pack |
Stock5,088 |
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Toshiba Semiconductor and Storage |
MULTIVIBRATOR DUAL MONO 16TSSOP
- Logic Type: Monostable
- Independent Circuits: 2
- Schmitt Trigger Input: No
- Propagation Delay: 9.6ns
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock19,944 |
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Toshiba Semiconductor and Storage |
IC BUFFER TRIPLE NON-INV US8
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 3
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: US8
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Package: 8-VFSOP (0.091", 2.30mm Width) |
Stock28,944 |
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Toshiba Semiconductor and Storage |
IC DRIVER DARL SINK 8CHAN 18SOP
- Type: Driver
- Protocol: -
- Number of Drivers/Receivers: 8/0
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 18-SOIC (0.276", 7.00mm Width)
- Supplier Device Package: 18-SOP
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Package: 18-SOIC (0.276", 7.00mm Width) |
Stock5,856 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX DUAL 4:1 SOP16
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 160 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 18 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: 30MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -50dB @ 1.5MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.209", 5.30mm Width) |
Stock22,380 |
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Toshiba Semiconductor and Storage |
X36 PB-F OPTO ISOLATION AMPLIFIE
- Type: Isolated Module
- Number of Channels: -
- Resolution (Bits): 1 b
- Sampling Rate (Per Second): -
- Data Interface: Serial
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 3 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Gull Wing
- Supplier Device Package: -
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Package: 8-SMD, Gull Wing |
Stock15,288 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5700K 2SMD
- Color: White, Cool
- CCT (K): 5700K
- Flux @ 85°C, Current - Test: 135 lm (120 lm ~ 150 lm)
- Flux @ 25°C, Current - Test: -
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 138 lm/W
- CRI (Color Rendering Index): 80
- Current - Max: 1.5A
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.085" (2.15mm)
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Package: 1414 (3535 Metric) |
Stock4,050 |
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Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 100MA 40V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 20 Ohm
- Load Current: 100mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 40 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.096", 2.45mm)
- Supplier Device Package: 4-VSON
- Relay Type: Relay
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Package: 4-SMD (0.096", 2.45mm) |
Stock23,304 |
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Toshiba Semiconductor and Storage |
OPTOISOLATR 5KV TRANSISTOR 4-DIP
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 200% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
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Package: 4-DIP (0.300", 7.62mm) |
Stock744,672 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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Package: 16-SOIC (0.179", 4.55mm Width) |
Stock2,844 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 5 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 20% @ 16mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 20V
- Current - Output / Channel: 8mA
- Voltage - Forward (Vf) (Typ): 1.64V
- Current - DC Forward (If) (Max): 20mA
- Vce Saturation (Max): -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
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Package: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Stock2,700 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV PSH PULL 6MFSOP-5
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 10kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 10mA
- Data Rate: 50MBd
- Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
- Rise / Fall Time (Typ): 3ns, 3ns
- Voltage - Forward (Vf) (Typ): 1.6V
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
- Supplier Device Package: 6-MFSOP, 5 Lead
|
Package: 6-SOIC (0.173", 4.40mm Width) 5 Leads |
Stock46,014 |
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Toshiba Semiconductor and Storage |
300MA LDO VOUT=1.3V DROPOUT=230M
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.57V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Inrush Current, Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: SC-74A, SOT-753 |
Stock7,056 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA S-MINI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: S-Mini
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock97,344 |
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Toshiba Semiconductor and Storage |
L-MOS LVP IC VCC: 2.3V-3.6V, SOT
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: -
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-953
- Supplier Device Package: fSV
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 118pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2B
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
Stock29,943 |
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Toshiba Semiconductor and Storage |
PB-F ESC VARICAP DIODE (HF), IR=
- Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
- Capacitance Ratio: 2.5
- Capacitance Ratio Condition: C2/C10
- Voltage - Peak Reverse (Max): 15 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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Package: - |
Stock11,919 |
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Toshiba Semiconductor and Storage |
NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock18,000 |
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