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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,256,108 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 14A UDFN6B
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock3,056 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,224 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock4,736 |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 7GHZ 80MA SMQ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 13dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-61AA
- Supplier Device Package: SMQ
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Package: SC-61AA |
Stock6,112 |
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Toshiba Semiconductor and Storage |
DIODE ZENER 33V 700MW SFLAT
- Voltage - Zener (Nom) (Vz): 33V
- Tolerance: ±10%
- Power - Max: 700mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 26.4V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
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Package: SOD-123F |
Stock36,000 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 10V 10MA FSC
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 10V
- Current - Max: 10mA
- Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
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Package: 2-SMD, Flat Lead |
Stock222,312 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: L-FLAT? |
Stock7,312 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A MFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: SOD-128 |
Stock21,744 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA CST3
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock7,104 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16HSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: Bipolar
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 400mA
- Voltage - Supply: 4.5 V ~ 20 V
- Voltage - Load: 0 V ~ 20 V
- Operating Temperature: -30°C ~ 75°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
- Supplier Device Package: 16-HSOP
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Package: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs |
Stock10,440 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 28HSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
- Supplier Device Package: 28-HSOP
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Package: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs |
Stock2,240 |
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Toshiba Semiconductor and Storage |
IC INVERTER OPEN-DRAIN 5-SSOP
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: Open Drain
- Voltage - Supply: 1.8 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: -, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock21,738 |
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Toshiba Semiconductor and Storage |
IC C0MP GP CMOS OPEN DRAIN SMV
- Type: General Purpose
- Number of Elements: 1
- Output Type: Open Drain
- Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
- Voltage - Input Offset (Max): 7mV @ 5V
- Current - Input Bias (Max): 1pA
- Current - Output (Typ): 25mA
- Current - Quiescent (Max): 220µA
- CMRR, PSRR (Typ): -
- Propagation Delay (Max): 200ns
- Hysteresis: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: SC-74A, SOT-753
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock5,024 |
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Toshiba Semiconductor and Storage |
IC MCU 32BIT 512KB FLASH 100LQFP
- Core Processor: ARM? Cortex?-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: I2C, SIO, UART/USART
- Peripherals: POR, WDT
- Number of I/O: 78
- Program Memory Size: 512KB (512K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
- Data Converters: A/D 12x10b
- Oscillator Type: External
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Package: 100-LQFP |
Stock7,908 |
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Toshiba Semiconductor and Storage |
POWER LED WHT 5700K 3535
- Color: White, Cool
- CCT (K): 5700K
- Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm)
- Flux @ 25°C, Current - Test: -
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 153 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 1.5A
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.085" (2.15mm)
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Package: 1414 (3535 Metric) |
Stock5,490 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 5 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 20% @ 16mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 20V
- Current - Output / Channel: 8mA
- Voltage - Forward (Vf) (Typ): 1.64V
- Current - DC Forward (If) (Max): 20mA
- Vce Saturation (Max): -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
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Package: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Stock7,296 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV PUSH PULL SO6-5
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 10kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 10mA
- Data Rate: 20MBd
- Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
- Rise / Fall Time (Typ): 15ns, 15ns
- Voltage - Forward (Vf) (Typ): 1.58V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
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Package: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Stock36,000 |
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Toshiba Semiconductor and Storage |
L-MOS LVP SERIES SINGLE 2-INPUT
- Logic Type: AND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 0.9 V ~ 3.6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.1 V ~ 0.4 V
- Logic Level - High: 0.75 V ~ 2.48 V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: fSV
- Package / Case: SOT-953
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Package: SOT-953 |
Stock84,420 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 30A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock81 |
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Toshiba Semiconductor and Storage |
LOW DROPOUT (LDO) IOUT: 200MA PD
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.11V @ 100mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 70 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UFBGA, WLCSP
- Supplier Device Package: 4-WCSP (0.79x0.79)
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 50V 0.1A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock8,982 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.8V 300MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.342V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680 nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: - |
Stock16,308 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 2CH 4-INP 8SSOP
- Logic Type: NAND Gate
- Number of Circuits: 2
- Number of Inputs: 4
- Features: -
- Voltage - Supply: 2V ~ 5.5V
- Current - Quiescent (Max): 2 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SSOP
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A US2H
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 40 V
- Capacitance @ Vr, F: 130pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: US2H
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock45,045 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14TSSOPB
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65V ~ 3.6V
- Current - Quiescent (Max): 40 µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.7V ~ 0.8V
- Logic Level - High: 1.7V ~ 2V
- Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOPB
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: - |
Stock7,500 |
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Toshiba Semiconductor and Storage |
DIODE VAR 15V UHF FSC
- Capacitance @ Vr, F: 16pF @ 2V, 1MHz
- Capacitance Ratio: -
- Capacitance Ratio Condition: -
- Voltage - Peak Reverse (Max): 15 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
IC GATE NAND 4CH 2-INP 14-TSSOP
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2V ~ 5.5V
- Current - Quiescent (Max): 2 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Package: - |
Request a Quote |
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