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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock323,400 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A TSM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 27.6 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSM
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,656 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A SOP-8 ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,120 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,848 |
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Toshiba Semiconductor and Storage |
TRANS NPN 1A 230V TO220-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock2,992 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SM6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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Package: SC-74, SOT-457 |
Stock23,988 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SMV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock27,762 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.3W SMV
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock25,326 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A CST2B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 40V
- Capacitance @ Vr, F: 120pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2B
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock78,096 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 100MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Package: TO-226-3, TO-92-3 Long Body |
Stock4,320 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 8V 250MA PW-MOLD
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 29V
- Voltage - Output (Min/Fixed): 8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.4V @ 200mA
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1mA ~ 50mA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,232 |
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Toshiba Semiconductor and Storage |
IC 8-BIT SHIFT REGISTER 16SOP
- Logic Type: Shift Register
- Output Type: -
- Number of Elements: 1
- Number of Bits per Element: 8
- Function: Parallel or Serial to Serial
- Voltage - Supply: 2 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.209", 5.30mm Width) |
Stock22,098 |
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Toshiba Semiconductor and Storage |
IC INVERTER SCHMITT TRIG SMV
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.9 V ~ 1.65 V
- Logic Level - High: 2.2 V ~ 3.85 V
- Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock4,976 |
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Toshiba Semiconductor and Storage |
IC INVERTER OPEN-DRAIN 5-SSOP
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: Open Drain
- Voltage - Supply: 1.8 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: -, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock6,320 |
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Toshiba Semiconductor and Storage |
IC INVERTER DUAL 4-INPUT 20SOP
- Logic Type: Buffer, Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 20-SOP
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Package: 20-SOIC (0.209", 5.30mm Width) |
Stock19,026 |
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Toshiba Semiconductor and Storage |
IC OPAMP GP 160KHZ 5SSOP
- Amplifier Type: General Purpose
- Number of Circuits: 1
- Output Type: -
- Slew Rate: 0.08 V/µs
- Gain Bandwidth Product: 160kHz
- -3db Bandwidth: -
- Current - Input Bias: 1pA
- Voltage - Input Offset: 2mV
- Current - Supply: 10µA
- Current - Output / Channel: 450µA
- Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock7,888 |
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Toshiba Semiconductor and Storage |
TVS DIODE 6.5VWM SOD923
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 6.5V (Max)
- Voltage - Breakdown (Min): 7.7V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 20pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
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Package: SOD-923 |
Stock8,280 |
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Toshiba Semiconductor and Storage |
PHOTORELAY 2FORMA 350V 8DIP
- Circuit: DPST (2 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
- Relay Type: Relay
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,210 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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Package: 16-SOIC (0.179", 4.55mm Width) |
Stock7,902 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX 8X1 16SOIC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 120 Ohm
- Channel-to-Channel Matching (ΔRon): 6 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
- Voltage - Supply, Dual (V±): ±1 V ~ 5 V
- Switch Time (Ton, Toff) (Max): 39ns, 32ns
- -3db Bandwidth: 180MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 3.5pF
- Current - Leakage (IS(off)) (Max): 400nA
- Crosstalk: -
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock5,408 |
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Toshiba Semiconductor and Storage |
300MA LDO VOUT=3.1V DROPOUT=230M
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.27V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Inrush Current, Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock5,568 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock23,007 |
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Toshiba Semiconductor and Storage |
TRANS NPN 230V 15A TO3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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Package: - |
Stock306 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A S-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 90pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
POWER TRANSISTOR PW-MINI PC=2.5W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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Package: - |
Stock2,307 |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 48
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(X)
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.5A UF6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
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Package: - |
Stock17,994 |
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Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 12A DFN8X8
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 120 µA @ 650 V
- Capacitance @ Vr, F: 778pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 4-DFN-EP (8x8)
- Operating Temperature - Junction: 175°C
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Package: - |
Stock14,886 |
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