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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.2A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock52,908 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock115,182 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CST3C
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock77,466 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.17A US6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 170mA
- Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
- Power - Max: 285mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock58,848 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,832 |
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Toshiba Semiconductor and Storage |
TRANS PNP 30V 0.5A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 150mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,256 |
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Toshiba Semiconductor and Storage |
TRANS PNP 160V 1.5A TO126N
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 10W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
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Package: TO-225AA, TO-126-3 |
Stock7,992 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock2,032 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock80,010 |
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Toshiba Semiconductor and Storage |
TRANS 8NPN DARL 50V 0.5A 18SOL
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.31W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOL
|
Package: 18-SOIC (0.295", 7.50mm Width) |
Stock4,608 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP 50V 0.15A ESV PLN
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: SOT-553 |
Stock5,712 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock6,288 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2C
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock4,384 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 20V ES6
- Diode Configuration: 3 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io) (per Diode): 50mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 20V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock6,656 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 4V SC59-3
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 4V
- Current - Average Rectified (Io) (per Diode): 30mA
- Voltage - Forward (Vf) (Max) @ If: 320mV @ 2mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 500mV
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,808 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 4V 200MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 4V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: SC-74A, SOT-753 |
Stock58,800 |
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Toshiba Semiconductor and Storage |
IC REG BUCK 3.3V 1A SYNC 8SON
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Fixed
- Number of Outputs: 1
- Voltage - Input (Min): 4.3V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Current - Output: 1A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: PS-8 (2.9x2.4)
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Package: 8-SMD, Flat Lead |
Stock5,712 |
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Toshiba Semiconductor and Storage |
IC LED DVR 16CH CC 24SSOP
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): Yes
- Number of Outputs: 16
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 26V
- Current - Output / Channel: 45mA
- Frequency: -
- Dimming: -
- Applications: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-SOP (0.236", 6.00mm Width)
- Supplier Device Package: 24-SSOP
|
Package: 24-SOP (0.236", 6.00mm Width) |
Stock4,544 |
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Toshiba Semiconductor and Storage |
IC INVERTER DUAL 4-INPUT 20TSSOP
- Logic Type: Buffer, Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock30,000 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5000K 2SMD
- Color: White, Cool
- CCT (K): 5000K
- Flux @ 85°C, Current - Test: 145 lm (130 lm ~ 160 lm)
- Flux @ 25°C, Current - Test: -
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 148 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 1.5A
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.085" (2.15mm)
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Package: 1414 (3535 Metric) |
Stock7,398 |
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Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 200MA 20V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 5 Ohm
- Load Current: 200mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 20 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.096", 2.45mm)
- Supplier Device Package: 4-VSON
- Relay Type: Relay
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Package: 4-SMD (0.096", 2.45mm) |
Stock25,272 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER 6SDIP GW
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 10kV/µs
- Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
- Pulse Width Distortion (Max): -
- Rise / Fall Time (Typ): 50ns, 50ns
- Current - Output High, Low: 400mA, 400mA
- Current - Peak Output: 600mA
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.268", 6.80mm Width)
- Supplier Device Package: 6-SDIP Gull Wing
- Approvals: cUL, UL
|
Package: 6-SOIC (0.268", 6.80mm Width) |
Stock3,492 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 6V 20SOIC
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 7.8mA, 7.8mA
- Voltage - Supply: 2 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
|
Package: 20-SOIC (0.295", 7.50mm Width) |
Stock5,504 |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 10
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(X)
- Package / Case: TO-247-4
|
Package: - |
Stock270 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: 70pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: - |
Stock8,928 |
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Toshiba Semiconductor and Storage |
LDO REG VOUT=1.5V IOUT=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.37V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 60 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
|
Package: - |
Stock29,955 |
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Toshiba Semiconductor and Storage |
IC CMOS 1 CIRCUIT SMV
- Amplifier Type: CMOS
- Number of Circuits: 1
- Output Type: -
- Slew Rate: -
- Gain Bandwidth Product: 630 Hz
- -3db Bandwidth: -
- Current - Input Bias: 1 pA
- Voltage - Input Offset: 100 µV
- Current - Supply: 350nA
- Current - Output / Channel: 11 mA
- Voltage - Supply, Single/Dual (±): -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: - |
Stock20,754 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 2A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
Package: - |
Stock45,015 |
|
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