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Toshiba Semiconductor and Storage |
IGBT 1000V 60A 170W TO3P LH
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
- Power - Max: 170W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 330ns/700ns
- Test Condition: -
- Reverse Recovery Time (trr): 2.5µs
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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Package: TO-3PL |
Stock22,140 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock5,888 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 50A DPAK-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,112 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,240 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,768 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock7,456 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock22,758 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 7CH 0.3A 16PSOP
- Switch Type: General Purpose
- Number of Outputs: 7
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.75A
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOP
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock17,952 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 48HTSSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2
- Applications: General Purpose
- Current - Output: 1.8A
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
- Supplier Device Package: 48-HTSSOP
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Package: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad |
Stock4,704 |
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Toshiba Semiconductor and Storage |
IC FLASH 128GBIT 52MHZ 169BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: 52MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-WFBGA
- Supplier Device Package: 153-WFBGA (11.5x13)
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Package: 153-WFBGA |
Stock5,040 |
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Toshiba Semiconductor and Storage |
IC 8-BIT SHIFT REGISTER 16VSSOP
- Logic Type: Shift Register
- Output Type: Tri-State
- Number of Elements: 1
- Number of Bits per Element: 8
- Function: Serial to Parallel
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-VFSOP (0.118", 3.00mm Width)
- Supplier Device Package: 16-VSSOP
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Package: 16-VFSOP (0.118", 3.00mm Width) |
Stock20,364 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER QUAD N-INV 14TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 4
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock3,712 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5000K 2SMD
- Color: White, Cool
- CCT (K): 5000K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 22 lm (Typ)
- Current - Test: 180mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 130 lm/W
- CRI (Color Rendering Index): 80
- Current - Max: 180mA
- Viewing Angle: 165°
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: SMD
- Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
- Height - Seated (Max): 0.015" (0.39mm)
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Package: 2-SMD, No Lead |
Stock6,714 |
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Toshiba Semiconductor and Storage |
PHOTORELAY 40V 4-SSOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 10 Ohm
- Load Current: 140mA
- Voltage - Input: 1.3VDC
- Voltage - Load: 0 ~ 40 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.165", 4.20mm)
- Supplier Device Package: 4-SSOP
- Relay Type: Relay
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Package: 4-SMD (0.165", 4.20mm) |
Stock8,118 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 500µA
- Current Transfer Ratio (Max): 600% @ 500µA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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Package: 16-SOIC (0.179", 4.55mm Width) |
Stock5,454 |
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Toshiba Semiconductor and Storage |
ISOLATION AMPLIFIER; DIGITAL OUT
- Type: -
- Number of Channels: 1
- Resolution (Bits): -
- Sampling Rate (Per Second): -
- Data Interface: -
- Voltage Supply Source: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,728 |
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Toshiba Semiconductor and Storage |
INTEGRATED CIRCUIT MICROCONTROLL
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,760 |
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Toshiba Semiconductor and Storage |
TX FAMILY MCU
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I²C, SIO, SPI, UART/USART, USB
- Peripherals: DMA, LVD, POR, WDT
- Number of I/O: 32
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 3.6 V
- Data Converters: A/D 8x10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Package: 48-VFQFN Exposed Pad |
Stock31,668 |
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Toshiba Semiconductor and Storage |
AUTOMOTIVE MOTOR H-BRIDGE DRIVER
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: Brushed DC
- Function: Driver
- Output Configuration: Pre-Driver
- Interface: PWM
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: Automotive
- Current - Output: -
- Voltage - Supply: 5V ~ 21V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 48-LQFP
- Supplier Device Package: 48-LQFP (7x7)
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Package: 48-LQFP |
Stock7,232 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SC70
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Package: - |
Stock11,280 |
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Toshiba Semiconductor and Storage |
BRUSHED MOTOR DRIVER IC, 2-CHANN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: -
- Technology: DMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 1.8V ~ 6V
- Voltage - Load: 1.8V ~ 6V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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Package: - |
Stock12,000 |
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Toshiba Semiconductor and Storage |
AUTOMOTIVE H SWITCH MOTOR DRIVER
- Motor Type - Stepper: -
- Motor Type - AC, DC: Servo DC
- Function: Controller - Commutation, Direction Management
- Output Configuration: Half Bridge (2)
- Interface: PWM
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: -
- Current - Output: 2A
- Voltage - Supply: 7V ~ 18V
- Voltage - Load: 0.5V ~ 12V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 24-LSSOP (0.220", 5.60mm Width)
- Supplier Device Package: 24-SSOP
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Package: - |
Stock1,407 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SC70
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
100 V/0.25 A SWITCHING DIODE, SO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 ns
- Current - Reverse Leakage @ Vr: 200 nA @ 80 V
- Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 27MOH
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock36 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
IGBT TRANS MODULE TO3PN
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A VESM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock240 |
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